• Bulletin of the Korean Chemical Society
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• 제17권2호
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• pp.158-162
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• 1996

The steady-state emission and fluorescence lifetimes of 1,3-dipyrenylpropane were measured in silicate sol-gel and xerogel matrices. In sol solution, the fluorescence emission spectra of monomer and excimer resemble those in hydrocarbon solvents. In gel and xerogel condition, however, the fluorescence spectra exhibit significant change, largely confirming the intramolecular motions in gel pores are influenced by microviscosity. The rate constants for intramolecular excimer formation were obtained from the measured fluorescence lifetimes and the rate processes for excimer forming in silicate sol-gel are described by a simple kinetic scheme.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 대한화학회지
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• 제36권1호
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• pp.100-106
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• 1992

스티렌-말레산(PSMA), 스티렌말레산 무수물(PSMAn), 및 스티렌-말레산의 $Eu^{3+}$ 염(PSMA-Eu)의 형광특성을 tetrahydrofuran 용액에서 연구하였다. 스티렌의 몰%가 75%인 PSMA와 PSMA-Eu은 들뜬 이합체의 결합에너지가 50%나 67%에 비해 크게 나타났다. 들뜬이합체-단위체 형광세기의 비로부터 스티렌 단위체의 농도가 $8.0{\times}10^{-3}M$까지도 분자내 들뜬이합체의 특성을 보였다. 들뜬이합체의 형성메카니즘을 설명하는 기존의 세 가지 모형은 이들 중합체에 대해서는 잘 맞지 않는 듯하다. benzylacetate, mesitylene 및 염소가 치환된 용매들이 들뜬이합체의 형광에 주는 영향을 을 조사하여 그 결과를 몰부피로 해석해 보았다.

• 폴리머
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• 제35권4호
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• pp.314-319
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• 2011

(2-N-carbazoylmethyl) styrene을 티타노센 촉매와 라디칼 개시제를 사용하여 신디오탁틱 및 아탁틱 poly(2-N-carbazoylmethyl) styrene을 합성하고 발광특성 중 엑시머 형성에 대하여 조시하였다. 어탁틱 고분자는 하나의 발광만을 나타낸 반면에 신디오닥틱 고분자는 카바졸기가 부분적으로 오버랩되는 정렬에서 기인하는 단량체 발광과 엑시머 발광을 모두 나타내었다. 아탁틱 고분자의 발광은 용액농도와 온도 의존성이 나타나지 않았으나, 신디오탁틱 고분자는 의존성의 크게 관찰되었다. 이러한 결과로 엑시머 발광은 치환기인 카바졸의 위치에 의존하는 것을 확인하였다.

• ETRI Journal
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• 제24권6호
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• pp.409-414
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• 2002

This paper investigates the absorption and emission changes in poly(di-n-hexylfluorene)s. We prepared the poly(di-n-hexylfluorene)s end capped with 2-bromofluorene, 2-bromo-9,9-di-n-hexylfluorene, and 9-bromoanthracene through Ni (0) mediated polymerization. In addition, we also synthesized a structurally distorted copolymer of 2,7-dibromo- 9,9-di-n-hexylfluorene and 9,9-bis(4-bromophenyl) fluorene end capped with 2-bromofluorene through the same polymerization method. The absorption and emission changes of these polymers between before and after thermal annealing in a nitrogen atmosphere clarify the role of aggregate/excimer formation in poly(fluorene)s. The large absorption changes must be attributed to aggregate formation (ground state interaction), which causes only a slight red shift of the vibronically structured emission bands. We assign the additional long wavelength emission as an excimer band (excited state interaction), which is preferably formed at chain ends.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2738-2742
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• 2014

Geometry relaxation effects on the formation of benzene excimer were investigated by means of ab initio calculation at SOS-CIS($D_0$)/aug-cc-pVDZ level. In the case of T-shaped dimer configuration, intermolecular interactions in the excited states are found to be nearly the same as those in the ground state and structural deformations are limited within a single molecule; the geometry relaxation effects are then negligible and singlet-triplet energy gap remains constant. As for face-to-face eclipsed dimer, on the other hand, both molecules undergo structural change. As a result, intermolecular interactions in the excited states are significantly different than those in the ground state. Although the intermolecular distances obtained from potential energy curve calculation with frozen molecular structures are in qualitative agreement, the excited-state binding energies are notably overestimated with respect to those at optimized structures. In particular, the effects are calculated to be larger in $T_1$ state and hence singlet-triplet energy gap, which reduces markedly in this configuration, is underestimated without relaxation.

• 한국레이저가공학회지
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• 제6권2호
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.155-156
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs by excimer laser annealing to reduce the trap density and improve the reliability significantly. This improvement is due to the formation of stronger Si-F bonds than Si-H bonds which passivate the trap states.

• Journal of Information Display
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• 제1권1호
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• pp.25-28
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1999년도 학술대회논문집-국제 전기방전 및 플라즈마 심포지엄 Proceedings of 1999 KIIEE Annual Conference-International Symposium of Electrical Discharge and Plasma
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• pp.58-63
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• 1999

In order to analyze the discharge-pumped KrF excimer laser, computer simulation code is developed. On the other hand, the electron velocity distribution in a discharge plasma, measured by the Thomson scattering method, showed the Maxwellian, while the code predicted non-Maxwellian. This disagreement was solved by introducing the electron-electron collision into the simulation code. We also developed a simulation code on the CO2 laser-heated plasma in high-pressure Ar gas, and estimated the formation process of Ar2 excimer. The code predicted the possibility of the Ar2 laser action at 126 nm.