한국정보디스플레이학회:학술대회논문집
- 2000.01a
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- Pages.155-156
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- 2000
In-situ Fluorine Passivation by Excimer Laser Annealing
- Jung, Sang-Hoon (School of Electrical Engineering, Seoul National University) ;
- Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
- Jeon, Jae-Hong (School of Electrical Engineering, Seoul National University) ;
- Yoo, Juhn-Suk (School of Electrical Engineering, Seoul National University) ;
- Han, Min-Koo (School of Electrical Engineering, Seoul National University)
- Published : 2000.01.13
Abstract
We propose a new in-situ fluorine passivation of poly-Si TFTs by excimer laser annealing to reduce the trap density and improve the reliability significantly. This improvement is due to the formation of stronger Si-F bonds than Si-H bonds which passivate the trap states.
Keywords