Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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In-Situ Fluorine Passivation by Excimer Laser Annealing

  • Jung, Sang-Hoon (School of Electrical Engineering, Seoul National University) ;
  • Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
  • Jeon, Jae-Hong (School of Electrical Engineering, Seoul National University) ;
  • Yoo, Juhn-Suk (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering, Seoul National University)
  • Published : 2000.12.21
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Abstract

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

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