• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.958-964
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• 2004

Most of people who are engaged in research and development find it difficult to solve the engineering problems creatively due to the lack of ideas. There are two famous methods for inventive problem solving: ＆apos;Brainstorming＆apos; and ＆apos;TRIZ＆apos;. Brainstorming is the most popular tool until now to find a creative solution and TRIZ is not so popular yet but leads us to a very useful and clear solution. These two methods whose goals are the same usually take quite different routes to the final solution; Those routes have their own unique advantages and disadvantages. In this paper, a creative problem solving method optimized by correlating Brainstorming and TRIZ is proposed. And this method demonstrates how rough initial ideas can be quickly refined and how a problem can be solved correctly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• Journal of information and communication convergence engineering
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• 제1권2호
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.301-306
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• 2014

A porous silicon microcavity (PSMC) sensor has been made for vapors of solvent solutions, and a method has been developed in order to obtain simultaneous determination of two volatile substances with different concentrations. In our work, the temperature of the solution and the velocity of the air stream flowing through the solution have been used to control the response of the sensor for ethanol and acetone solutions. We study the dependence of the cavity-resonant wavelength shift on solvent concentration, velocity of the airflow and solution temperature. The wavelength shift depends linearly on concentration and increases with solution temperature and velocity of the airflow. The dependence of the wavelength shift on the solution temperature in the measurement contains properties of the temperature dependence of the solvent vapor pressure, which characterizes each solvent. As a result, the dependence of the wavelength shift on the solution temperature discriminates between solutions of ethanol and acetone with different concentrations. This suggests a possibility for the simultaneous determination of the volatile substances and their concentrations.

• 청정기술
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• 제2권1호
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• pp.47-52
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• 1996

인쇄회로기판(Printed Circuit Board) 생산 공정에서 발생하는 동폐액을 재활용, 재이용하기 위하여 유기 용매 추출법을 이용하였으며 유기용매로 Lix 64 N을 사용하였다. 산성인 동폐액과 염기성인 동폐액을 혼합하여 pH=2에서 부피 비율로 30%인 Lix 64 N은 17.1gr/l의 동을 추출하였다. 벤치 규모의 연속공정에서 추출단 4단, 세척단 4단, 역추출단 2단이 사용되었다. 회수된 동은 유산동으로 재활용되고 추잔액은 동부식액으로 재이용되었으며 동의 회수율과 유산동의 순도는 모두 99.9% 이상이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• 청정기술
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• 제14권2호
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• pp.123-128
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• 2008

LCD 제조공정에서 배출되는 폐에칭액으로부터 조(粗)인산 회수 후 잔류하는 질산, 초산 혼산폐액을 분리하여 자원화함으로써 고부가가치화하고 2차 폐수의 발생이 없는 친환경적인 청정 재활용기술을 개발하고자 진공증발을 이용하여 혼산폐액을 분리하였다. 진공도 -760 mmHg 조건에서 온도의 따른 진공증발 결과 $33^{\circ}C$ 이하에서는 초산만 증발되었으나 $33^{\circ}C$ 이상에서는 초산과 함께 질산이 미량 증발되었다. 초산 회수율을 높이고 질산 증발을 억제하기 위하여 -760 mmHg, $40^{\circ}C$ 조건으로 증발시간에 따른 증발거동을 조사하고 회수되는 증발량을 고려하여 추가로 물과 원액을 공급하였다. 또한 질산만 선택적으로 반응하도록 20 g/L NaOH를 소량씩 단계적으로 공급하였다. 질산 증발은 batch type 에서는 7%이었으나, 물 추가 시 0.78%, 원액 추가 시 0.25%까지 감소하였다. 20 g/L NaOH를 소량씩 단계적으로 공급한 결과 초산 회수율은 100%까지 증가하였으며, 질산은 6.22%까지 증발하였다.

• 전기화학회지
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• 제22권1호
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• pp.36-42
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• 2019

두께가 $52{\mu}m$의 주석필름을 고농도의 질산을 사용한 화학적 식각과정을 거쳐서 리튬이온 이차전지용 고용량 음극인 다공성 주석후막을 제조하였다. 다공성 주석필름은 반응면적이 증가하게 되어 리튬과의 합금화 반응에 대한 과전압이 감소하였으며, 동시에 충방전 시의 부피변화에 대응할 수 있는 공간이 확보되었다. 또한, 이러한 다공성 주석후막 전극은 바인더 및 도전재의 사용이 필요하지 않기 때문에 실질적으로 더욱 큰 에너지 밀도의 구현이 가능하다. 식각용액에서의 질산농도가 증가할 수록 주석필름의 식각되는 정도가 증가하여 주석의 무게와 두께가 더욱 감소하였다. 3 M 농도 이상의 질산에서 주석필름의 식각이 효과적으로 진행되었으나, 5 M 농도에서는 식각속도가 더욱 증가하여 60초 내에 대부분의 주석이 용출되어 회수할 수 없었다. 4 M 농도의 질산용액에서 식각한 경우에는 두께는 40.3%가 감소하며 무게는 48.9%가 감소된 다공성 구조가 형성되었다. 주석필름의 식각되는 정도가 증가함에 따라 전기화학적 활성이 증가하게 되어 리튬저장에 대한 가역용량이 증가하였으며, 4 M 농도에서 식각한 주석필름의 경우에는 650 mAh/g의 가역용량을 나타내었으며, 안정적인 사이클 특성을 나타내어 주석분말을 사용하여 기존의 전극제조 방법으로 제조한 경우보다 향상된 사이클 성능을 나타내었다.

• 한국정보전자통신기술학회논문지
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• 제13권5호
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• pp.412-418
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• 2020

본 논문은 에칭액(FeCl₃)의 비중을 정확히 제어할 수 있는 자동 액 관리시스템을 제작하여 OLED에 적용되는 SUS MASK 제작하였다. 그리고 홀 직경을 0.4 mm로 목표치를 정하였다. 본 실혐 결과, FeCl₃의 비중(S.G) 값을 1.43에서 1.49까지 변화를 주었을때 에칭 속도는 빨라졌다. 그리고 비중이 1.49일 때, 홀직경이 0.405 mm로의 목표치에 접근한 것을 알 수가 있었다. 압력분사를 2.0 kg/cm2~3.5 kg/cm2까지 변화를 주었을 때 3.0 kg/cm2에서 홀 직경은 평균 0.4 mm로 목표치와 일치하였다. FeCl₃에 HCl과 H2O을 혼합하여 비중을 1.430으로 설정하고 분사 압력을 3.0 kg/cm2으로 고정시키고 첨가제를 1.2%로 적용하여 비중 변화에 따른 특성을 분석하였다. 비중을 1.460 ~ 1.469까지 변화주었을 때 비중이 증가할수록 에칭속도는 0.564에서 0.540으로 빨라졌다. 그리고 비중이 1.467일 때 홀 직경이 0.4 mm로 측정되어 목표치에 도달하였다.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.