• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.958-964
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• 2004

Most of people who are engaged in research and development find it difficult to solve the engineering problems creatively due to the lack of ideas. There are two famous methods for inventive problem solving: ＆apos;Brainstorming＆apos; and ＆apos;TRIZ＆apos;. Brainstorming is the most popular tool until now to find a creative solution and TRIZ is not so popular yet but leads us to a very useful and clear solution. These two methods whose goals are the same usually take quite different routes to the final solution; Those routes have their own unique advantages and disadvantages. In this paper, a creative problem solving method optimized by correlating Brainstorming and TRIZ is proposed. And this method demonstrates how rough initial ideas can be quickly refined and how a problem can be solved correctly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.301-306
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• 2014

A porous silicon microcavity (PSMC) sensor has been made for vapors of solvent solutions, and a method has been developed in order to obtain simultaneous determination of two volatile substances with different concentrations. In our work, the temperature of the solution and the velocity of the air stream flowing through the solution have been used to control the response of the sensor for ethanol and acetone solutions. We study the dependence of the cavity-resonant wavelength shift on solvent concentration, velocity of the airflow and solution temperature. The wavelength shift depends linearly on concentration and increases with solution temperature and velocity of the airflow. The dependence of the wavelength shift on the solution temperature in the measurement contains properties of the temperature dependence of the solvent vapor pressure, which characterizes each solvent. As a result, the dependence of the wavelength shift on the solution temperature discriminates between solutions of ethanol and acetone with different concentrations. This suggests a possibility for the simultaneous determination of the volatile substances and their concentrations.

• Clean Technology
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• v.2 no.1
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• pp.47-52
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• 1996

The solvent extraction method was applied on a spent solution containing copper, which was produced in a printed circuit board process, to recover copper and to reuse the etching solution. Lix 64 N ($\alpha$-Hydroxyoxime + $\beta$-Hydroxybenzophenone Oxime) was used as a solvent. The acidic spent copper solution was mixed with and alkaline copper solution to pH=2. The solvent including 30 volume% of Lix 64 N extracted 17.1gr/l of copper from the mixed spent copper solution. In the continuous bench scale experiment, 4 stages for extraction, 2 stages for stripping and 4 stages for washing were used. Recovered copper was recycled as copper sulfate and the raffinate was reused as copper etchant. The percentage of copper recovery and the purity of copper sulfate were higher than 99.9%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Clean Technology
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• v.14 no.2
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• pp.123-128
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• 2008

The waste solution, which was discharged from the recovery process of LCD etching solution, consists of 15 wt% nitric acid and 20 wt% acetic acid. In this study, it was conducted to separate acid individually from the mixed acid by vacuum evaporation under -760 mmHg gauge and at $40^{\circ}C$. We have investigated evaporation behavior of acid as a function of temperature. There have been problems that tiny amount of nitric acid were evaporated simultaneously above $33^{\circ}C$. Thus, efforts were conducted to recover acetic acid by vacuum evaporation with adding $H_2O$, waste mixed acid and 20 g/L NaOH for a curb on evaporation of nitric acid. By adding $H_2O$, evaporation of nitric acid was reduced from 7% to 0.78%. However, it was reduced from 7% to 0.25% by adding mixed acid. In view of the results achieved so far, we may expect to separate the etching solution individually by controlling vacuum conditions.

• Journal of the Korean Electrochemical Society
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• v.22 no.1
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• pp.36-42
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• 2019

A macroporous Sn thick film as a high capacity negative electrode for a lithium ion secondary battery was prepared by using a chemical etching method using nitric acid for a Sn film having a thickness of $52{\mu}m$. The porous Sn thick film greatly reduced the over-voltage for the alloying reaction with lithium by the increased reaction area. At the same time. The porous structure of active Sn film plays a part in the buffer and reduces the damage by the volume change during cycles. Since the porous Sn thick film electrode does not require the use of the binder and the conductive carbon black, it has substantially larger energy density. As the concentration of nitric acid in etching solution increased, the degree of the etching increased. The etching of the Sn film effectively proceeded with nitric acid of 3 M concentration or more. The porous Sn film could not be recovered because the most of Sn was eluted within 60 seconds by the rapid etching rate in the 5 M nitric acid. In the case of etching with 4 M nitric acid for 60 seconds, the appropriate porous Sn film was formed with 48.9% of weight loss and 40.3% of thickness change during chemical acid etching process. As the degree of etching of Sn film increased, the electrochemical activity and the reversible capacity for the lithium storage of the Sn film electrode were increased. The highest reversible specific capacity of 650 mAh/g was achieved at the etching condition with 4 M nitric acid. The porous Sn film electrode showed better cycle performance than the conventional electrode using a Sn powder.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.412-418
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• 2020

This paper produced an automatic fluid management system that can accurately control the specific gravity of etching solution(FeCl₃), and produced a SUS MASK applied to OLED. The target was set at 0.4 mm in diameter of the hole. As a result of this misconception, the etching speed increased when the specific gravity(S.G) value of FeCl₃ was changed from 1.43 to 1.49. And when the weight was 1.49, it was found that the vertical diameter was 0.405 mm, approaching the target. When pressure injection was varied from 2.0kg/cm2 to 3.5kg/cm2, the hole diameter at 3.0 kg/cm2 averaged 0.4mm, matching the target. The characteristics of the change in gravity were analyzed by applying the additive 1.2% and setting the weight at 1.430 by mixing HCl and H2O in FeCl₃ and fixing the injection pressure at 3.0 kg/cm2. When the weight changed from 1.460 to 1.469 the etching speed increased from 0.564 to 0.540. When the weight was 1.467, the hole diameter was measured at 0.4 mm and the target was reached.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.