• Title/Summary/Keyword: etching solution.

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Synthesis of boehmite powder from aluminum etching solution (알루미늄 에칭액으로부터 베마이트 분말 합성)

  • Park, Young-Soo;Wui, In-Hee;Cho, Woo-Seok;Kim, Jin-Ho;Hwang, Kwang-Taek
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.6
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    • pp.286-290
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    • 2012
  • Boehmite (AlOOH) powder was synthesized using waste aluminium etching solution. In waste solution, precipitated phase was gibbsite ($Al(OH)_3$), and boehmite (AlOOH) phase was obtained at pH of 7 and 8 controlled by addition of acid. Boehmite powder was obtained by washing process to remove the Na ion in precipitated solution. Mean particle size of obtained powder was 40 nm. Boehmite phase transformed to ${\alpha}-Al_2O_3$ phase via ${\gamma}-Al_2O_3$, ${\delta}-Al_2O_3$, and ${\Theta}-Al_2O_3$.

Two Step Texturing Using RIE and Wet Etching for Crystalline Silicon Solar Cell (알카리 식각과 반응성 이온 식각을 이용한 결정질 실리콘 2단계 표면 조직화 공정)

  • Yeo, In Hwan;Park, Ju Eok;Kim, Jun Hee;Cho, Hae Sung;Lim, Donggun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.2
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    • pp.140-143
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    • 2013
  • Lowering surface reflectance of silicon wafer by texturization is one of the most important processes to improve the efficiency of silicon solar cells. Generally, the texturing of crystalline silicon was carried out using alkaline solution. The average reflectance of this method was 11% at the wavelength between 400 and 1,000 nm. In this study, the wafers were first texturing by NaOH solution at $80^{\circ}C$ for 35 min. Then the wafers were texturing by $SF_6$ and $O_2$ plasma in RIE (Reactive Ion Etching). The average reflectance of two step texturing was reduced to below 5% at the wavelength between 400 and 1,000 nm.

Coating and Etching Technologies for Indirect Laser processing of Printing Roll (인쇄 롤의 간접식 레이저 가공을 위한 코팅과 에칭 기술)

  • Lee, Seung-Woo;Kim, Jeong-O;Kang, HeeShin
    • Laser Solutions
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    • v.16 no.4
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    • pp.12-16
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    • 2013
  • For mass production of electronic devices, the processing of the printing roll is one of the most important key technologies for printed electronics technology. A roll of printing process, the gravure printing that is used to print the electronic device is most often used. The indirect laser processing has been used in order to produce printing roll for gravure printing. It consists of the following processing that is coating of photo polymer or black lacquer on the surface of printing roll, pattering using a laser beam and etching process. In this study, we have carried out study on the coating and etching for $25{\mu}m$ line width on the printing roll. To do this goals, a $4{\mu}m$ coating thickness and 20% average coating thickness of the coating homogeneity of variance is performed. The factors to determine the thickness and homogeneity are a viscosity of coating solution, the liquid injection, the number of injection, feed rate, rotational speed, and the like. After the laser patterning, a line width of $25{\mu}m$ or less was confirmed to be processed through etching and the chromium plating process.

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Porous Si Layer by Electrochemical Etching for Si Solar Cell

  • Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.616-621
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    • 2009
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

Selective fabrication and etching of vertically aligned Si nanowires for MEMS

  • Kar, Jyoti Prakash;Moon, Kyeong-Ju;Das, Sachindra Nath;Kim, Sung-Yeon;Xiong, Junjie;Choi, Ji-Hyuk;Lee, Tae-Il;Myoung, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.27.2-27.2
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    • 2010
  • In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

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Surface Analysis and Conversion Efficiency of Multi-crystalline Silicon Solar Cell by Wet Chemical Etching (습식 화학 식각에 의한 다결정 실리콘 웨이퍼의 표면 분석 및 효율 변화)

  • Park, Seok-Gi;Do, Kyeom-Seon;Song, Hee-Eun;Kang, Gi-Hwan;Ahn, Hyung-Keun;Han, Deuk-Young
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.111-115
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    • 2011
  • Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.

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Characterization of Combined Micro- and Nano-structure Silicon Solar Cells using a POCl3 Doping Process

  • Jeong, Chaehwan;Kim, Changheon;Lee, Jonghwan;Yi, Junsin;Lim, Sangwoo;Lee, Suk-Ho
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.69-72
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    • 2013
  • Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

Groove manufacturing for Fluid and Aero Dynamic Bearings using Chemical Etching (화학적 에칭을 이용한 유체 및 공기 동압 베어링용 그르브 가공)

  • Lee, Yong-Geun;Kim, Sang-Uk
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.61 no.4
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    • pp.225-227
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    • 2012
  • This paper presents a chemical etching system for groove manufacturing for the fluid and aero dynamic bearings. To manufacture the grooves to thrust and journal surface of the fluid and aero dynamic bearing, it is very important for grooves' depth to be smaller tolerance. It is very difficult for the internal surface of journal bearing to make the grooves precise. If the precision of the groove is not exact, we can not get the desirable performance for the target of the dynamic bearing. To make the groove of bearing precise, we propose the method of chemical etching system. It has known that the method of chemical etching can not make the groove on the internal surface of journal bearing excepts for on the surface of thrust bearing. However, this paper has shown the solution to make the grooves on it. We obtain the condition and the parameters of the system such as time, chemical material composition and so on. In this paper, we get the experimental results to verify the precise groove manufacturing for the fluid and aero dynamic bearing.

Influence of KOH Solution on the Passivation of Al2O3 Grown by Atomic Layer Depostion on Silicon Solar Cell

  • Jo, Yeong-Jun;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.299.2-299.2
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    • 2013
  • We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

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Fabricating a Micro-Lens Array Using a Laser-Induced 3D Nanopattern Followed by Wet Etching and CO2 Laser Polishing

  • Seung-Sik Ham;Chang-Hwam Kim;Soo-Ho Choi;Jong-Hoon Lee;Ho Lee
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.4_1
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    • pp.517-527
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    • 2023
  • Many techniques have been proposed and investigated for microlens array manufacturing in three-dimensional (3D) structures. We present fabricating a microlens array using selective laser etching and a CO2 laser. The femtosecond laser was employed to produce multiple micro-cracks that comprise the predesigned 3D structure. Subsequently, the wet etching process with a KOH solution was used to produce the primary microlens array structures. To polish the nonoptical surface to the optical surface, we performed reflow postprocessing using a CO2 laser. We confirmed that the micro lens array can be manufactured in three primary shapes (cone, pyramid and hemisphere). Compared to our previous study, the processing time required for laser processing was reduced from approximately 1 hour to less than 30 seconds using the proposed processing method. Therefore, micro lens arrays can be manufactured using our processing method and can be applied to mass productionon large surface areas.