• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1164-1167
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• 2003

Recently CRT is getting flatted, As change of CRT trend from normal type to Flat type, the material of Shadow Mask was also changed from AK(Aluminum Killed) to Invar(Fe-Ni alloy) materials Until now we have used just AK(Aluminum Killed) for normal type TV(not flat type), but main raw material of shadow mask component was changed. . However recently Invar(Fe-Ni alloy) materials, which has advantage of Low Thermal Expansion and High Strength, has been developed as well as applying in mass production as CRT's trend has become more flat and fine pitch. As main raw material of shadow mask component was changed, conditions of process were changed. One of them, the importance of pre-etching process (assistant process for developing & etching) is improved because there are so many particles in the pre-etching bath because of Ni compounds. Since the solubility of Ni in pre-etching solvent is very low related to Fe's, so the compounds of Ni happen to make particles.(the solubility of Fe is twenty times Ni's) that particles happen to make process troubles and NG productions so to clear the particles we had to established high cost filtering system, but it is useless. As time goes by the quantity of particles (Ni compounds) was increased because of the capability of filtering system was not enough, the particles was produced continuous in bath, and it make quality problems. Hence we tried to develop the new pre-etching solution to remove the particles (Ni compounds) and to cost down the filtering system's running cost. But in improving the solution we discovered the new pre-etching solution made the PR developing better. In former solution there were three kinds of chemistry (COOH)2 , H2O2 , H2S04 .first the function of (COOH)2 is drilling the surface of Invar, during this mechanism Ni compounds occurred. Second the function of H202 is removing the PR fringe (half UV exposure zone on PR(PVA)), Third the function of H2S04 is the catalysis of (COOH)2 In those, (COOH)2 was the main reason to make the Ni compounds. So to improve the solutions we had to change (COOH)2 to the other material. the chemistry we improved was a complex chemistry based on H2S04 . after using this chemistry the particles problem was disappeared and there was another advantage cut down the PR fringe. The New solution made the function of H202 better so the PR developing improved. To be direct the catalyst of the new solution helped the H202. anyway First thing after change the solution the quality of shadow Mask for flat color TV was improved & the yield also improved. But the more important thing is how to control the new solution. So we accepted the new concept which was the degree of freshness. The degree of freshness is based on non-reacted solution which was 100% ( the degree of freshness) and calculated the melted Ni quantity as time goes by. So we made the gauging liner plot. In conclusion, many companies tried to make fine pitched Shadow Mask ,generally to make quality jump up it needed a lot of cost & persons .in this case the shift of core material made it possible.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.481-486
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• 1997

This paper describes the anisotropic etching characteristics of Si in acqueous TMAH/IPA solutions. The etch rates of (100) oriented Si crystal planes decrease with increasing TMAH concentration and IPA concentration. Etchant concentration and etch temperature have a large effect on hillock density. Hillock density strongly increase with lower TMAH concentration and higher etch temperature. The etched (100) planes are covered by pyramidal-shaped hillocks below TMAH 15 wt.%, but very smooth surface is obtained TMAH 25 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes. Undercutting ratio of pure TMAH solution is much higher than KOH. But, addition of IPA to TMAh the underrcutting ratio reduces by a factor of 3∼4. Therefore, acqueous TMAH/IPA solution is able to use as anisotropic etchant of Si because of full compability with IC fabrication process.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.295-298
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• 1989

Using the anisotropic etching characteristics or $N_2H_4-H_2O$ solution, Si diaphragm was fabricated for the integrated sensor. The optimal composition and temperature of the solution in Si etching process was established to be 50mol% $N_2H_4$ in water at $105{\pm}2^{\circ}C$ for both higher etch rate(=$2.6{\mu}m/min$) and better surface quality of etched {100} planes. Under the optimal etching condition, the electrochemical etch stop technique was employed to form Si diaphragm for pressure sensor and diaphragm thickness was exactly controlled to $20{\pm}2{\mu}m$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.959-962
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• 2000

In this study, the micro shaft was fabricated by high speed etching process. The integration of the kinetic energy of circumference and the effect of etching takes less time to fabricate the micro shaft than any other conventional methods. First, the end part of the rod(SKD11) was dipped in chemical solution(FeCl$_3$) and the rod rotated at high speed(3500-10000rpm). Experimental setup was simply composed of high speed motor. chemical solution and $\Phi$ 1 mm rod. The main factors of diameter control are chemical concentration, reaction time and rpm. has a result. the diameter of the dipped rod was decreased by 200${\mu}{\textrm}{m}$ by high speed rotation and its shape and surface was good. From this experiment, we found the possibility to manufacture micro shaft without very expensive equipment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.9-14
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• 2004

In this study, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate(AP)/isopropyl alcohol(IPA) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-unifonnity exists on the etched surface because of formation of hillocks on the (100) surface. The addition of IPA to TMAH solution leads to smoother etched surfaces but, makes the Si etch rate lower. However, with the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square membranes of 20${\mu}{\textrm}{m}$ thickness and l00-400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.21-25
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• 2001

This paper presents the effect of pyrazine on tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) single-crystal silicon anisotropic etching properties. With the addition of IPA to TMAH solutions, etching characteristics are exhibited an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of 0.8 ${\mu}{\textrm}{m}$/min, which is faster by 13% than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH: 0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased when more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front are not observed and the undercutting ratio is reduced by 30~50%. These results indicate that anisotropic etching technology using TMAH:IPA:pyrazine solutions provides a powerful and versatile method for realizing of microelectromechanical systems.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1068-1071
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• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.13-19
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• 2014

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.