• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.423-428
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• 2013

Porous YSZ ceramics are fabricated using 3 mol% yittria-stabilized zirconia (3YSZ) and NiO with different particlesizes (0.6 and 7 ${\mu}m$). Nickel oxide (NiO) is added to the YSZ powder as a pore former with different amounts(40, 50, and 60 vol%) and at different sintering temperatures (1350 and $1400^{\circ}C$) are applied in order to evaluate the temperature effects on the pore and mechanical properties. Heat treatment is conducted after sintering at $700^{\circ}C$ in $H_2$ for the NiO reduction process; then, Ni is removed using a $HNO_3$ etchant solution. According to the NiO contentand sintering temperatures, 41-67% porous YSZ ceramic is obtained and the flexural strength increases, while the porosity decreases with an increasing sintering temperature. The optimum flexural strength ($136.5{\pm}13.4MPa$) and porosity (47%) for oxygen transport porous YSZ membrane can be obtained with 40 vol% of 7 ${\mu}m$ NiO particle at a sintering temperature of $1350^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2823-2830
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• 2014

The antenna miniaturization technique involves the increment of the electrical length of the resonator the variation of the physical appearance of the antenna. The most typical method of size reduction is designing helical antenna, meander antenna, and fractal antenna. Size reduction using fractal antenna is proposed in this paper. Fractal koch curve has been etched in microstrip patch antenna to downsize the antenna at ISM (Industrial Scientific and Medical) frequency band of 2.45 GHz koch curve microstrip patch antenna ha FR4 epoxy substrate with dielectric constant 4.7, loss tangent equal to 0.02 and dielectric high of 1.6 mm. The designed antenna is fabricated using etching process. The fabricated antenna has return loss of 2.45 GHz, VSWR of 1.1492, and impedance is matched to $46{\Omega}$.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.160-164
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• 2003

The external magnetic field dependency of the impedance, resistance, and inductance of the meander pattern fabricated by using Co-base amorphous ribbon has been investigated in the frequency range of 300 ㎑∼1 ㎓. The amorphous ribbon was patterned to the meander pattern through conventional photolithography and wet etching process. The extremely high sensitivity in impedance changing ratio by external magnetic field was observed. This is due to the transverse magnetic anisotropy the pattern which was induced by magnetic field annealing. The impedance had peak value at the external field of -13 Oe and the impedance changing ratio 100 ${\times}$ (Z$\_$13/-Z$\_$0/)/Z$\_$0/) was about 210％ at the frequency of 50 MHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.11
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• pp.7773-7780
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• 2015

Analysis of existing kettle and its heating system has been the topic for localization technology development. Test pieces are made, polished and etched for existing kettle analysis. Surface of test pieces is observed using SEM, the kettle is verified to be made by deep drawing process from Ferrite-Perlite material. The kettle is also identified to be plated $16{\sim}49{\mu}m$ of thickness with Nickel(16%). Also heat transfer characteristics based on hot wire arrangement is investigated and optimal hot wire system is developed. Developed control system detects overheating and stops the whole system on the long operating time. Developed kettle takes the performance evaluation test for volume expansion and satisfied for standard 'KS G3602'.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.639-647
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• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.157-160
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• 2009

Many fundamental studies have been carried out regarding waste water and hazardous gas treatments technologies using the photolysis effect of $TiO_2$. However, a permanent use of $TiO_2$ particles immobilized using organic or organic-inorganic binders is impossible. In this study, Ni-$TiO_2$ composite coating was produced by electroless plating to trap $TiO_2$ particles in the Ni coating layer. The electroless plating was performed in the bath solutions with three different concentrations of $TiO_2$ particles : 10 g/l, 20 g/l, and 40 g/l. The surface and photolytic characteristics of the coating layer was investigated by the use of SEM, a scratch tester, and an UV-Visible spectrophotometer. The results showed that the amounts of immobilized $TiO_2$ particles and the photolytic rate of the coating increased with the initial content of $TiO_2$ particles in the electroless bath. In addition, the photolytic rate of the Ni-$TiO_2$ composite coating was remarkably promoted by etching process in 10% HCl solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.393-393
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• 2010

The biocompatibility of materials used for biomedical applications depends on chemical composition, mechanical stiffness, surface energy, and roughness. The plasma treatment and etching process is a very important technology in the biomedical fields due to possibility of controlling the surface chemistry and properties of materials. In this work, $N_2/H_2$ plasma were treated on single-walled carbon nanotubes (SWCNTs) paper and characterization of treated SWCNTs paper was carried out. Also we investigated neurite outgrowth from SH-SY5Y on treated SWCNTs paper. The results indicated that $N_2/H_2$ plasma-modified SWCNTs paper enhanced neuronal cell adhesion, viability, neurite outgrowth and branching in vitro and exerted a positive role on the health of neural cells.