• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1277-1280
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• 2005

A high-aspect-ratio and high-resolution stainless steel shadow mask for organic thin-film transistors (OTFTs) circuit has been fabricated by a new method which combines photochemical machining, micro-electrical discharge machining (micro-EDM), and electrochemical etching (ECE). First, connection lines and source-drain holes are roughly machined by photochemical etching, and then the part of source and drain holes is finished by the combination of micro-EDM and ECE processes. Using this method a $100\;\mu{m}$ thick stainless steel (AISI 304) shadow mask for inverter can be fabricated with the channel length of $30\;\mu{m}\;and\;10\;\mu{m}\;respectively.\;The\;width\;of\;connection line\;is\;150\;\mu{m}$. The aspect ratio of the wall is about 5 and 15, respectively. Metal lines and source-drain electrodes of OTFTs were successfully deposited through the fabricated shadow mask.

• 청정기술
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• 제13권3호
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• pp.188-194
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• 2007

급속한 성장에 따른 디스플레이 산업에서의 생산량 증가는 원료 사용의 증가와 배출액의 증가를 야기하고 있으며 이에 따른 폐액 처리양이 증가되어 환경적, 경제적 문제점을 안고 있다. 본 연구에서는 브라운관 소재인 shadow mask의 식각공정 시 사용한 식각용액의 피로도를 감수시키기 위하여 산화반응을 이용하여 신액 사용량과 구액 배출량을 최소화해주는 GRS(Green Recycling System)공정의 수율을 향상시키기 위해 실험실 및 현장적용 실험을 통하여 공정의 최적화를 하기위한 방법을 연구하였다. 공정변수들과 GRS 공정의 수율과의 관계를 규명하였으며 GRS 반응기의 내부구조 개선으로 인해 약 10%의 수율증가를 확인하였으며 공정의 수율 향상과 최적화에 큰 도움이 되었다.

• 한국정밀공학회지
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• 제21권8호
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• pp.152-156
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• 2004

A new tool of surface patterning technique for general purpose lithography was developed based on shadow mask method. This paper describes the fabrication of a new type of miniaturized shadow mask. The shadow mask is fabricated by photolithography and etching of 100-mm full wafer. The fabricated shadow mask has over 388 membranes with apertures of micrometer length scale ranging from 1${\mu}{\textrm}{m}$ to 100s ${\mu}{\textrm}{m}$ made on each 2mm${\times}$2mm large low stress silicon nitride membrane. It allows micro scale patterns to be directly deposited on substrate surface through apertures of the membrane. This shadow mask method has much wider choice of deposit materials, and can be applied to wider class of surfaces including chemical functional layer, MEMS/NEMS surfaces, and biosensors.

• 한국기계가공학회지
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• 제18권2호
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• pp.38-43
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• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.53-58
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• 2022

Shape changes of hard mask play a key role in the aspect ratio dependent etch (ARDE). For etch process using high density and energy ions, deformation of hard mask shape becomes more severe, and high aspect ratio (HAR) etch profile is distorted. In this study, polygonal geometric model for shape-deformation of amorphous carbon layered hard mask is suggested to control etch profile during the process. Mask shape is modeled with polygonal geometry consisting of trapezoids and rectangles, and it provides dynamic information about angles of facets and etched width and height of remained mask shape, providing important features for real-time HAR etch profiling.

• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.1-6
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• 2000

X-선 노광용 마스크의 재료로서 SiC와 Ta박막을 각각 ECR플라즈마 CVD, 스퍼터링 장비를 이용하여 증착한 뒤 잔류응력, 미세구조, 표면상태, 그리고 화학적 결합상태 등을 조사하였고, ECR etching system을 이용하여 Ta박막 미세 식각 특성을 연구하였다. SiC박막은 $N_2$분위기에서 RTA를 통하여 X-선 투과막 물질로서 필요한 적절한 인장응력을 변화 시킬 수 있었고, 공정 압력을 조절하여 증착한 Ta박막은 높은 밀도와 우수한 표면 평활도를 가지고 시간과 온도에 따른 응력의 안정성이 좋은 X-선 흡수체를 증착할 수 있었다. 또한 Cl 플라즈마는 흡수체 물질 Ta에 대해 좋은 식각특성을 보였고, two-step 식각을 통해 microloading effect를 억제함으로써 0.2 $\mu\textrm{m}$이하의 미세패턴을 식각해 낼 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• 한국재료학회지
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• 제10권6호
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• pp.450-455
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• 2000

실리콘 소자가 더욱 미세화되면서, 발생되는 power consumption, crosstalk와 interconnection delay 등을 감소시키기 위해 $SiO_2$ 대신에 저유전 상수막의 적용이 고려되어진다. 본 논문에서는, 저유전 상수 층간 절연막 재료로 유망한 폴리이미드의 식각 특성에 $O_2/SF_6$ 가스가 미치는 영향을 연구하였다. 폴리이미드의 식각률을 SF(sub)6 가스의 첨가에 따라 산소와 hydrocarbon 폴리머 간의 반응을 억제하는 비휘발성 물질은 fluorine 화합물의 형성에 의해 감소되었다. 반면에, 기판 전극의 전압 증가는 물리적인 충격을 통해 식각 공정을 증가시켰다. 또한 작은 량의 SF(sub)6 가스 첨가는 식각 topography에 바람직하였다. 폴리이미드 식각을 위한 $SiO_2$ hard mask 사용은 산소 플라즈마 식각 하에서 효과적이었다(선택비-30). 반면에 $O_2SF_6$ 가스 조성은 식각 선택비를 4로 저하시키게 되었다. 이러한 결과를 기초로, $1-2\mu\textrm{m}$ 선폭을 가진 PI 2610의 식각을 원활히 수행할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.151-151
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• 1996