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Development of Polygonal Model for Shape-Deformation Analysis of Amorphous Carbon Hard Mask in High-Density Etching Plasma  

Song, Jaemin (Department of Energy Systems Engineering, Seoul National University)
Bae, Namjae (Department of Energy Systems Engineering, Seoul National University)
Park, Jihoon (Department of Energy Systems Engineering, Seoul National University)
Ryu, Sangwon (Department of Energy Systems Engineering, Seoul National University)
Kwon, Ji-Won (Department of Energy Systems Engineering, Seoul National University)
Park, Taejun (Department of Energy Systems Engineering, Seoul National University)
Lee, Ingyu (Department of Energy Systems Engineering, Seoul National University)
Kim, Dae-Chul (Plasma E.I. Convergence Research Center, Korea Institute of Fusion Energy)
Kim, Jong-Sik (Plasma E.I. Convergence Research Center, Korea Institute of Fusion Energy)
Kim, Gon-Ho (Department of Energy Systems Engineering, Seoul National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.4, 2022 , pp. 53-58 More about this Journal
Abstract
Shape changes of hard mask play a key role in the aspect ratio dependent etch (ARDE). For etch process using high density and energy ions, deformation of hard mask shape becomes more severe, and high aspect ratio (HAR) etch profile is distorted. In this study, polygonal geometric model for shape-deformation of amorphous carbon layered hard mask is suggested to control etch profile during the process. Mask shape is modeled with polygonal geometry consisting of trapezoids and rectangles, and it provides dynamic information about angles of facets and etched width and height of remained mask shape, providing important features for real-time HAR etch profiling.
Keywords
High aspect ratio (HAR); Aspect ratio dependent etching (ARDE); Hard mask shape; Plasma information (PI);
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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