• Restorative Dentistry and Endodontics
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• 제28권5호
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• pp.363-368
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• 2003

The purpose of this study is to evaluate the effect of additional enamel etching with phosphoric acid on the microleakage of the adhesion of self-etching primer system. Class V cavity($4mm{\times}3mm{\times}1.5mm$) preparations with all margins in enamel were prepared on buccal surface of 42 extracted human upper central incisor teeth. Prepared teeth were randomly divided into 3 groups. Group 1：no additional pretreatment with 37% phosphoric acid (NE). Group 2：additional pretreatment with 37% phosphoric acid for 10 seconds (E10s). Group 3：additional pretreatment with 37% phosphoric acid for 20 seconds (E20s). The adhesives(Clearfil SE $Bond^{\circledR}$, Kuraray, Osaka, Japan) and composite resins(Clearfil $AP-X^{\circledR}$, Osaka, Kuraray, Japan) were applied following the manufacturer's instructions. All the specimens were finished with the polishing disc(3M dental product, St Paul, MN, USA), thermocycled for 500 cycles between $5^{\circ}C$ and $55^{\circ}C$ and resected apical 3-mm root. 0.028 stainless steel wire was inserted apically into the pulp chamber of each tooth and sealed into position with sticky wax. Surrounding tooth surface was covered with a nail varnish 2 times except areas 1mm far from all the margins. After drying for one day, soaked the samples in the distilled water. Microleakage was assessed by electrochemical method(System 6514, $Electrometer^{\circledR}$), Keithley, USA) in the distilled water. In this study, the microleakage was the lowest in group 1 (NE) and the highest in group 3(E20s)(NE

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.35-39
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• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• ETRI Journal
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• 제45권1호
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• pp.171-179
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• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

• 센서학회지
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• 제32권5호
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• pp.328-333
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• 2023

This study experimentally verified the etch rate of the SiO₂ sacrificial layer etching process with a single etch hole using vapor-phase hydrogen fluoride (VHF) etching. To fabricate small-sized polysilicon etch holes, both circular and triangular pattern masks were employed. Etch holes were fabricated in the polysilicon thin film on the SiO₂ sacrificial layer, and VHF etching was performed to release the polysilicon thin film. The lateral etch rate was measured for varying etch hole sizes and sacrificial layer thicknesses. Based on the measured results, we obtained an approximate equation for the etch rate as a function of the etch hole size and sacrificial layer thickness. The etch rates obtained in this study can be utilized to minimize structural damage caused by incomplete or excessive etching in sacrificial layer processes. In addition, the results of this study provide insights for optimizing sacrificial layer etching and properly designing the size and spacing of the etch holes. In the future, further research will be conducted to explore the formation of structures using chemical vapor deposition (CVD) processes to simultaneously seal etch hole and prevent adhesion owing to polysilicon film vibration.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.1091-1092
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.775-776
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• 2009

• 대한치과교정학회지
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• 제34권4호
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• pp.325-332
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• 2004

본 연구의 목적은 산부식과 전처리 과정을 결합하여 접착 단계를 단순화시킨 self-etching primer의 임상적인 유용성 을 판단하고자, self-etching primer로 브라켓을 접착하는 방법과 기존의 $37\%$ 인산으로 부식하여 접착하는 방법을 사용하여, 광중합시 사용되는 광원 및 브라켓 종류에 따른 전단결합강도와 접착파절양상에 관하여 비교 연구하는 것이다. 사람의 상하악 소구치를 포매하여 만든 시편을 부식 및 전처리 방법에 따라 각각 $37\%$ 인산으로 산부식 후 Transbond XT primer를 사용하여 접착한 군과 Transbond Plus self-etching primer를 사용하여 접착한 군으로, 광원 종류에 따라 가시광선과 plasma arc light을 이용하여 중합한 군으로 나누었고, 브라켓 종류에 따라 금속브라켓과 세라믹 브라켓을 사용하여 접착한 군으로 분류하여 각 군간의 전단결합강도와 접착파절양상을 관찰하여 다음과 같은 결과를 얻었다. 1. 광원과 브라켓 종류가 동일한 조건일 때, self-etching primer를 사용하여 접착한 군과 XT primer를 사용하여 접착한 군간의 전단결합강도는 통계적으로 유의한 차가 없었다. 2. 금속브라켓을 접착한 경우, 광원과 부식 및 전처리 방법에 따른 전단결합강도는 통계적으로 유의한 차가 없었다. 3. Self-etching primer와 XT primer를 사용하여 접착한 군 모두에서 세라믹 브라켓을 사용하여 접착한 군의 전단결합 강도는 금속브라켓을 사용하여 접착한 군보다 통계적으로 유의하게 컸다(p<0.001). 4. 접착제 잔류지수는 self-etching primer를 사용하여 접착한 군과 XT primer를 사용하여 접착한 군에서 통계적인 유의한 차가 없었으며, 세라믹 브라켓을 사용하여 접착한 군에서 금속브라켓을 사용하여 접착한 군보다 유의하게 커서, 법랑질-레진 접착 계면 부위의 파절이 더 많은 것으로 나타났다. 이상의 결과로 미루어 보아 Transbond Plus self-etching primer를 사용하여 브라켓을 접착하는 것은 적절한 결합강도를 얻으면서도 사용이 간편하고 시술 시간을 단축시킬 수 있으므로 임상적으로 유용할 것으로 판단된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1500-1503
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• 1997

In this paper a multiple channel EPD controller is developed which enables us to detect endpoints simultaneously in the plasma etching process operated in multiple etching chambers and its performance characteristic are investigated. for the accurate detectiion of endpoint the developed EDP controller was able to implement endpoint detectiions by integrating the existing EPD controllers with the techiques of artificial intellignet, to enhance its performance. The performance of the developed EPD controller was carried out by repeated experiments of endpoint detection in the acrual production line of semiconductor manufacturing. It's utility for endpoint detectiion was accurately evaluated in various etching process. The control capability of multiple etching chambers enhances its application compared with the existing one, and also increases the user utility os that the efficiency of operation was improved.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.