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Investigation of Ge2Sb2Te5 Etching Damage by Halogen Plasmas  

Jang, Yun Chang (Department of Energy Systems Engineering, Seoul National University)
Yoo, Chan Young (Department of Materials Science and Engineering, Seoul National University)
Ryu, Sangwon (Department of Energy Systems Engineering, Seoul National University)
Kwon, Ji Won (Department of Energy Systems Engineering, Seoul National University)
Kim, Gon Ho (Department of Energy Systems Engineering, Seoul National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.4, 2019 , pp. 35-39 More about this Journal
Abstract
Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.
Keywords
GST; $Ge_2Sb_2Te_5$ chalcogen compounds; etching mechanism; plasma etching damage; and Semiconductor manufacturing;
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Times Cited By KSCI : 1  (Citation Analysis)
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