• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.138-141
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• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.207-212
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• 1999

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Textile Coloration and Finishing
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• v.9 no.6
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• pp.10-17
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• 1997

In order to improve the anti-static property of several hydrophobic fibers by sputter etching, polyester, polypropylene and poly(p-phenylene sulfide) have been etched by sputtering in the presence of argon gas and the resulting anti-static property investigated by half time decay, the time of water permeation, weight loss rate and scanning electron microscope(SEM). The temporary change and durability of anti-static property of samples treated with sputter etching were evaluated. The results were as follows; 1) Half time decay of samples treated with sputter etching were decreased about 18~38%. According to increasing sputter etching time, half time decay is decreased. 2) The wettability and weight loss rate of treated samples were increased remarkably. According to the SEM photographs, many microcraters on the substrate surface by the sputter etching were observed. 3) Although the washing treatment and the time elapsed after treatment are allowed longer, the variation of half time decay hardly can find.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.321-324
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• 2020

In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.1954-1961
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• 2022

Lead-based fast reactor (LFR) has become one of the most promising reactors for Generation IV nuclear systems. A developing trend of LFR is high efficiency, along with operation temperatures up to 800 ℃ or even higher. One of key issues in the high-efficiency LFR is corrosion of cladding materials with lead at high temperatures. In this study, corrosion behavior of some refractory metals (Nb, Nb521, and Mo-0.5La) was investigated in static lead at 1000 ℃ for 1000 h. The results showed that Nb and Nb521 exhibited an intense dissolution corrosion with obvious lead penetration after corrosion, and lead penetration extended along the grain boundaries of the specimens. Furthermore, Nb521 showed a better corrosion resistance than that of Nb as a result of the elements of W and Mo included in Nb521. Mo-0.5La showed much better corrosion resistance than that of Nb and Nb521, and no lead penetration could be observed. However, an etched morphology appeared on the surface of Mo-0.5La, indicating the occurrence of corrosion to a certain degree. The results indicate that Mo-0.5La is compatible with lead up to 1000 ℃. While Nb and Nb alloys might be not compatible with lead for high-efficiency LFR at such high temperatures.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.243-248
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• 1986

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.34 no.3
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• pp.325-340
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• 2008

The purpose of this study was to evaluate the artificial dental plaque by Streptococcus mutans on 4 different implant surfaces. In this study, the specimens were divided into 4 groups according to implant surface treatment. Uncoated implant group(n=5) which has an uncoated, smooth surfaced implant(Osstem, Korea), SLA implant group(n=5) which has an sandblasted large grit and acid-etched surface implant(Bicon, USA). Oxidized implant group(n=5) which has an oxidized surfaced implant (Osstem, Korea), and RBM implant group(n=5) which has resorbable blasting media(RBM) surfaced implant(Osstem, Korea). Acquired pellicle by human saliva and dental plaque by Streptococcus mutans were made on each implant surface. To analyze the plaque condition on implants surfaces, cell count and optical density were taken as a microbiologic method, and SEM(Scanning Electronic Microscope) findings was also taken for evaluation of surface condition. The following results were obtained. 1. Cell counting results of artificial dental plaque were Uncoated group($658.0{\pm}102.0$), RBM group($878.0{\pm}170.0$), SLA group ($946.0{\pm}42.0$), Oxidized group($992.0{\pm}40.0$), and there was difference between Oxidized group and Uncoated implant group(p<0.05). In case of modified cell counting results by v/w% were RBM group($197.8{\pm}45.2$), Oxidized group($207.04{\pm}8.34$), Uncoated group($261.6{\pm}40.6$), SLA group($315.4{\pm}14.0$), and there was difference between RBM group and SLA group(p<0.05). 2. Optical density results of artificial dental plaque after ultrasonic treatment was that there was difference among groups, and optical density of RBM group was higher than that of Uncoated group(p<0.05). In case of modified optical density results by v/w%, there was difference among groups, and the modified optical density of Uncoated group and SLA group was higher than those of Oxidized group and RBM group(P>0.05). 3. SEM findings of artificial dental plaque on the surfaces of implant as follows; there were artificial dental plaque on the surfaces of all test implants. Streptococcus mutans and by-product were observed at 10,000 times magnified condition on all test implants. Adhesion area of artificial dental plaque was about 1/2 of total surface after 24 hours incubate at $37^{\circ}C$. These results showed that there were differences among implant surfaces on the growth of Streptococcus mutans, and bacteria and by-product were covered about 1/2 area of total implant surfaces at 24 hours incubate at $37^{\circ}C$.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.1
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• pp.78-94
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• 2005

Purpose. The purpose of this study was to compare the effects of various surface treatments by measuring resonance frequency and histomorphometric analyses. Material and methods. In 5 adult dogs, the mandibular premolar were extracted. Six months later, 30 screw titanium implants (Dentium Co., Seoul, Korea) 6mm in length and 3.4mm in diameter, were placed in the mandibles of 5 dogs. Implants were divided into five groups following to surface treatment methods ; Group 1 is machined controls, Group 2 is sandblasted with large grit and acid-etched (SLA), Group 3 is anodized (Autoelectric Co., Korea, 660Hz, Duty10), Group 4 is hydroxyapatite(HA) coated by ion beam assisted deposition(E-beam), Group 5 is hydroxyapatite(HA) coated with Sol-gel coating process. Resonance frequency was measured implant placement immediately, and 3, 6 weeks and 10 weeks of healing perods. With the animal subject's sacrifice 10 weeks after implantation, implants were removed on bloc and histologic and computer-based histomorphometric analyses were performed. Histomorphometric analysis involved quantification of the entire bone to metal contact around the implants. Statistical analyses were performed using the SPSS for Windows (ver. 9.0 SPSS Inc.) Statistical differences were considered significant at P<0.05. Results. The results were as follows : 1) In five groups, mean value of resonance frequency analysis(RFA) were highest in group 5 (Sol-gel implant) at implantation and those of group 4 (E-beam)was highest at 10 weeks . but there was no correlation between surface treatments and RFA. 2) In all surface treatment groups, the RFA values of implants decreased until 3 weeks and increased to 10 weeks. 3) The percentage of direct bone-to-implant contact (BIC) had statistical significance between five groups in cancellous bone, (P<0.05) the percentage of bone density inside the thread had no statistical significance between five groups. (P>0.05) 4) There was a significant difference between cortical bone and cancellous bone in BIC. (P<0.05) and bone density. (P<0.05) 5) There was a correlation between the RFA value of implants at 10 weeks and BIC in cancellous bone, and between the RFA value of implants at 10 weeks and bone density in cortical bone. (P<0.05). Conclusions. These results indicate that surface treatment does not affect the implant stability in case of good bone quality.

• Restorative Dentistry and Endodontics
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• v.24 no.3
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• pp.473-481
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• 1999

This study evaluated the shear bond properties of IPS Empress glass ceramic to enamel and dentin surfaces with three ceramic surface treatments, and three resin cements. The influence of thermocycling was also investigated. The purpose of this study was to investigate the influences of resin cements, ceramic surface treatments, and thermocycling on shear bond properties. Ninety freshly extracted, noncarious human molars were selected for this study. The surface treatments of ceramic were etching <5.0% hydrofluoric acid, application of silane coupling agents(Tokuso Ceramic Primer, Clearfil porcelain bond, Monobond-S), and the combination of the two methods. Empress cylinders were bonded to enamel and dentin surfaces with three kinds of resin cements(Bistite resin cement, Panavia 21, Variolink). The specimens were aged in $37^{\circ}C$ distilled water for 24 hours. Half of the specimens were then thermocycled 500times between $5^{\circ}C$ and $55^{\circ}C$ with a dwell time of 15 seconds. Each specimen was debonded in shear mode and measured shear bond properties by using the universal testing machine(Zwick 020, Germany). The data were analyzed by SPSS/PC+(one-way ANOVA, Scheffe' s test and t-test). The results were as follows : 1. Without thermocyling, there was significant difference of shear bond strength to enamel surface between Bistite Resin Cement and Panavia 21 in case of etched and silane-treatment(p<0.05). 2. Without thermocyling, the shear bond strength of a group treated with silane and etching was significantly higher than that of a group treated with silane or etching with the application of Panavia 21 and Variolink(p<0.05). 3. A group treated with etching with the application of Variolink only showed a decrease of shear bond strength after thermocycling(p<0.05).