• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 추계학술대회
• /
• pp.504-509
• /
• 2004

Chemical machining(CHM) is a special process which material removed by contact of strong etchant. The application as industrial process was started from aircraft industry after 2nd world war. Chemical milling, one of the CHM process, initially became commercial bussiness and it was called chem-mill. Even today, this process widely used to remove the material from aircraft wings and fuselage panel in aircraft industry. In this study, it is attempted to design the cylinder pattern which minimize the weight within the allowable stress using chemical milling.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2001년도 춘계학술대회 논문집
• /
• pp.844-847
• /
• 2001

The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.659-660
• /
• 2006

High-aspect-ratio(max. 12.5) microchannels with excellent surface quality and good shape uniformity have been realized utilizing laser-induced etching technique. Etch width and depth variations depend largely upon process variables such as laser power and etchant concentration. Etchant concentration in association with viscosity also influence on the cross-sectional profile of the channels. The optimum process conditions for the fabrication of high-aspect-ratio microchannels applicable to micro thermal devices are demonstrated.

• 반도체디스플레이기술학회지
• /
• 제13권3호
• /
• pp.13-19
• /
• 2014

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

• 정보저장시스템학회논문집
• /
• 제2권3호
• /
• pp.196-200
• /
• 2006

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.274-278
• /
• 2002

The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.

• 한국표면공학회지
• /
• 제28권3호
• /
• pp.174-181
• /
• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• 한국전기전자재료학회논문지
• /
• 제21권5호
• /
• pp.397-401
• /
• 2008

Most of the topic in PCB industry was about increasing the volume of product for the development of electronics in numerous industrial application area. However, it has been emerged that yield improvement quality manufacturing via detecting any suspicious process in order to minimize the scrapped product and material waste. In addition, recently, restriction of hazardous substances (RoHS) claims that electronic manufacturing environment should reduce the harmful chemicals usage, thus the importance of monitoring copper etchant and detecting any mis-processing is crucial for electronics manufacturing. In this paper, we have developed real-time chemical monitoring system using RGB sensor, which is simpler but more accurate method than commercially utilized oxidation reduction potential (ORP) technique. The developed Cu etchant monitoring system can further be utilized for copper interconnect process in future nano-semiconductor process.

• 반도체디스플레이기술학회지
• /
• 제18권4호
• /
• pp.1-5
• /
• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2008년도 제35회 하계학술대회 초록집
• /
• pp.269-269
• /
• 2008