• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.407-408
• /
• 2005

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

• Korean Journal of Metals and Materials
• /
• v.46 no.12
• /
• pp.835-840
• /
• 2008

Texturing for crystalline silicon solar cells is one of the important techniques to increase conversion efficiency by effective photon trapping. Generally, incoming wafers or alkali etched wafers are used for texturing. From this conventional etching process, $7{\sim}10{\mu}m$-sized random pyramids are formed. In this study, acid etching for removal of saw damages was practiced before texturing. This improved the resulting surface morphology, which consisted of $2{\sim}4{\mu}m$-sized pyramids. Because these pyramids covered the surface much more extensively, we obtained reduction of optical losses on the surface. In order to compare with conventional texturing, FE-SEM is used for observing surface morphology and reflectance data is analyzed by UV-VIS spectrophotometer.

• Korean Journal of Metals and Materials
• /
• v.48 no.11
• /
• pp.1028-1034
• /
• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.4
• /
• pp.77-82
• /
• 2022

During etching process of PCB, the electroplated copper line and seed layer copper have different etching rates and it caused the over etching of copper line as well as undercut of lines. In this research, the effects of etchants composition on copper etching characteristics were investigated. The optimum concentration of hydrogen peroxide and sulfuric acid of etchants were obtained using polarization and OCV (open circuit voltage) analysis for both rolled copper and electroplated copper. The inhibiting effects of different inhibitors were investigated using OCV and ZRA (zero resistance ammeter) analysis. The galvanic current between electroplated copper and seed layer copper were measured using ZRA method. Inhibitors for least galvanic current could be chosen based on galvanic coupling in ZRA analysis.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.380-381
• /
• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• Restorative Dentistry and Endodontics
• /
• v.44 no.4
• /
• pp.45.1-45.10
• /
• 2019

Objectives: Self-adhesive resin cements contain functional monomers that enable them to adhere to the tooth structure without a separate adhesive or etchant. One of the most stable functional monomers used for chemical bonding to calcium in hydroxyapatite is 10-methacryloyloxydecyl dihydrogen phosphate (10-MDP). The aim of this study was to evaluate the influence of the10-MDP concentration on the bond strength and physical properties of self-adhesive resin cements. Materials and Methods: We used experimental resin cements containing 3 different concentrations of 10-MDP: 3.3 wt% (RC1), 6.6 wt% (RC2), or 9.9 wt% (RC3). The micro-tensile bond strength of each resin cement to dentin and a hybrid resin block (Estenia C&B, Kuraray Noritake Dental) was measured, and the fractured surface morphology was analyzed. Further, the flexural strength of the resin cements was measured using the three-point bending test. The water sorption and solubility of the cements following 30 days of immersion in water were measured. Results: The bond strength of RC2 was significantly higher than that of RC1. There was no significant difference between the bond strength of RC2 and that of RC3. The water sorption of RC3 was higher than that of any other cement. There were no significant differences in the three-point bending strength or water solubility among all three types of cements. Conclusions: Within the limitations of this study, it is suggested that 6.6 wt% 10-MDP showed superior properties than 3.3 wt% or 9.9 wt% 10-MDP in self-adhesive resin cement.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.11
• /
• pp.8-12
• /
• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.109.2-109.2
• /
• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.39.1-39.1
• /
• 2009

NiTi alloy is widely used innumerous biomedical applications (orthodontics, cardiovascular, orthopaedics, etc.) for its distinctive thermomechanical and mechanical properties such as shape memory effect, super elasticity, low elastic modulus and high damping capacity. However, NiTi alloy is still a controversial biomaterial because of its high Ni content which can trigger the risk of allergy and adverse reactions when Ni ion releases into the human body. In order to improve the corrosion resistance of the TiNi alloy and suppress the release of Ni ions, many surface modification techniques have been employed in previous literature such as thermal oxidation, laser surface treatment, sol-gel method, anodic oxidation and electrochemical methods. In this paper, the NiTi was electrochemically etched in various electrolytes to modify surface. The microstructure, element distribution, phase composition and roughness of the surface were investigatedby scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry(EDS), X-ray diffractometry (XRD) and atomic force microscopy (AFM). Systematic controlling of nano and submicron surface features was achieved by altered density of hydro fluidic acid in etchant solution. Nanoscale surface topography, such as, pore density, pore width, pore height, surface roughness and surface tension were extensively analyzed as systematical variables.Importantly, bone forming cell, osteoblast adhesion was increased in high density of hydro fluidic treated surface structures, i.e., in greater nanoscale surface roughness and in high surface areas through increasing pore densities.All results delineate the importance of surface topography parameter (pores) inNiTi to increase the biocompatibility of NiTi in identical chemistry which is crucial factor for determining biomaterials.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.3
• /
• pp.41-46
• /
• 2008

Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.