• 제목/요약/키워드: equivalent series resistance

검색결과 92건 처리시간 0.026초

Equivalent-circuit Analysis of ITO/Alq3/Al Organic Light-emitting Diode

  • Chung, Dong-Hoe;Kim, Tae-Wan
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.131-134
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    • 2007
  • An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

알루미늄 합금의 저항점 용접에 관한 연구 ( I ) (A Study on the Resistance Spot Welding of Aluminum Alloy (I))

  • 김상필;홍태민;장희석
    • Journal of Welding and Joining
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    • 제12권4호
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    • pp.127-140
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    • 1994
  • Resistance spot welding has been widely used in the sheet metal joining processes because of its high productivity and convenience. In the resistance spot welding processes the size of molten nugget is a criterion to assess weld quality. Many research have founded on measuring weld nugget size at the same time monitoring welding process parameters such as dynamic resistance and electrode movement. With increasing demand of energy saving, many efforts were made to employ aluminum alloys that are lighter than steel and have relatively equivalent strength to steel in the automobile industry. In this paper, spot weldability of aluminum alloys for various welding conditions were examined by series of experiments. One of the 6000 series (Mg-Si) aluminum alloy, 6383-T4 was chosen, which is currently considered as a substitute for the galvanized steel. Dynamic resistance, electrode movement and corresponding nugget size were observed and compared to the case of steel. Finally, resistance spot welding of dissimilar material (galvanized steel-aluminum alloy) was attempted.

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주파수 분석기법을 이용한 전압 평활용 전해 커패시터의 고장진단 (Frequency Analysis Method Based Fault Diagnosis of an Electrolytic Capacitor for Voltage Smoothing)

  • 손진근;김진식
    • 전기학회논문지P
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    • 제58권2호
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    • pp.207-213
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    • 2009
  • Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. This paper proposed a novel fault diagnosis method of an electrolytic capacitor used for voltage smoothing in boost DC converter. The equivalent series resistance(ESR) of electrolytic capacitor estimated from FFT result of filtered waveform of capacitor voltage/current. Main advantage of the proposed method include circuit simplicity and easy implementation. Simulation and experimental results are shown to verify the performance of the proposed method.

인버터 직류링크 전압 평활용 전해 커패시터의 고장 진단 (Fault Diagnosis of a Electrolytic Capacitor for Inverter DC-Link Voltage Smoothing)

  • 이광운
    • 전력전자학회논문지
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    • 제12권5호
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    • pp.372-377
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    • 2007
  • 본 논문은 가변속 구동 장치에서 직류링크 전압 평활용으로 사용되는 전해 커패시터의 새로운 고장 진단 방법을 제안한다. 전해 커패시터의 등가직렬저항은 직류링크 전압과 부하 전류로부터 직접 추정되고, 추정된 등가직렬저항으로부터 전해 커패시터의 상태가 결정된다. 온도 변동에 따른 등가직렬저항 변동을 보상하기 위해, 커패시터 주변의 PCB에 다이오드를 부착하고 다이오드의 전압 강하로부터 커패시터의 온도를 간접적으로 검출한다. 시뮬레이션 및 실험은 제안된 방식의 효용성을 보인다.

하이브리드형 슈퍼커패시터의 실험적 특성 규명 (Experimental Characteristics Examination of a Hybrid-Type Supercapacitor)

  • 정규원;신재열
    • 한국생산제조학회지
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    • 제25권4호
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    • pp.307-311
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    • 2016
  • Several types of supercapacitors have been developed for energy storage systems. Among them, the hybrid type has advantages such as a large capacitance per weight compared with the electric double-layer capacitator type. In this study, constant current charging and discharging tests were conducted for recently developed hybrid-type supercapacitors. Based on the experimental results, the capacitance and equivalent series resistance were obtained. The capacitance was larger than the designed capacitance at a low current but became small at a high current. In addition, the capacitance depended on the cell voltage. These results can be used to design an energy storage system.

DC/DC 컨버터를 이용한 DC Bus 커패시터의 간단한 ESR 측정 기법 (A Simple ESR Measurement Method for DC Bus Capacitor Using DC/DC Converter)

  • 손진근;김진식
    • 전기학회논문지P
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    • 제59권4호
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    • pp.372-376
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    • 2010
  • Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. The estimation of the equivalent series resistance(ESR) is important parameter in life condition monitoring of electrolytic capacitor. This paper proposes a simple technique to measure the ESR of an electrolytic capacitor. This method uses a switching DC/DC boost converter to measure the DC Bus capacitor ESR of power converter. Main advantage of the proposed method is very simple in technique, consumes very little time and requires only simple instruments. Simulation results are shown to verify the performance of the proposed method.

통과대역 평탄도를 개선한 4단 저잡음 능동 대역통과 여파기 설계 (Design of 4-Pole Low Noise Active Bandpass Filter Improving Amplitude Flatness of Passband)

  • 방인대;전영훈;이재룡;윤상원
    • 한국전자파학회논문지
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    • 제15권6호
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    • pp.590-598
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    • 2004
  • 저잡음 특성과 함께 부성 저항과 수동 캐패시턴스의 특성을 보이도록 설계된, 직렬 피드백 회로를 이용한 FET능동 캐패시턴스 회로를 심도 있게 분석하였고, 이를 저잡음 능동 대역통과 여파기에 적용하였다. 부성저항을 이용한 마이크로파 대역 능동 여파기의 설계방식은 비교적 여러 차례 소개되었으나, 원하는 주파수에서 적절한 부성저항 성분을 구현하는 데에는 아직 어려움이 있으며, 이로 인한 능동 회로의 안정성 저하와 대역내 평탄도 증가 등으로 인해 실제 상용화에는 다다르지 못하고 있다. 이들 문제를 해결하고 실제 상용화에 이르기 위해서는 부성저항 회로의 세밀한 분석이 필요하며, 이를 이용한 부성저항 성분의 제어를 가능하도록 해야 한다. 이에 본 논문에서는 능동 캐패시턴스 회로의 부성저항 성분을 분석하였고, 또한 BPF의 통과대역의 평탄도를 개선할 수 있는 방법을 제시하였다. 제작된 4단 대역통과 여파기는 중심주파수 1.99 ㎓에서 60 MHz의 대역폭을 가지며, 0.67 ㏈ 삽입손실, 0.3 ㏈ 이내의 대역내 평탄도와 3.0 ㏈의 잡음 지수 특성을 보였다.

Accurate Formulas for Frequency-Dependent Resistance and Inductance Per Unit Length of On-Chip Interconnects on Lossy Silicon Substrate

  • Ymeri, H.;Nauwelaers, B.;Maex, K.;Roest, D.De;Vandenberghe, S.;Stucchi, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권1호
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    • pp.1-6
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    • 2002
  • A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

$ITO/Alq_3/Al$ 소자의 주파수 의존 응답을 이용한 유기 발광소자의 등가회 로 분석 (Equivalent-Circuit Analysis of Organic Light-Emitting Diodes using Frequency-dependent Response of $ITO/Alq_3/Al$ Device)

  • 안준호;정동회;허성우;이준웅;송민종;이원재;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.5-8
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    • 2004
  • We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

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ITO/$Alq_3$/Al 소자 구조의 합성 임피던스 분석 (Complex Impedance Analysis of $ITO/Alq_3/Al$ device structure)

  • 정동회;김상걸;이준웅;장경욱;이원재;송민종;정택균;김태완;이기우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.438-439
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    • 2006
  • We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

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