• Title/Summary/Keyword: epoxy molding compound

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ANALYSIS OF RADIOACTIVE IMPURITIES IN ALUMINA AND SILICA USED FOR ELECTRONIC MATERIALS

  • Lee Kil-Yong;Yoon Yoon-Yeol;Cho Soo-Young;Kim Yong-Je;Chung Yong-Sam
    • Nuclear Engineering and Technology
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    • v.38 no.5
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    • pp.423-426
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    • 2006
  • A developed neutron activation analysis(NAA) and gamma-spectrometry were applied to improve the analytical sensitivity and precision of impurities in electronic-circuit raw materials. It is well known that soft errors in high precision electronic circuits can be induced by alpha particles emitted from naturally occurring radioactive impurities such as U and Th. As electronic circuits have recently become smaller in dimension and higher in density, these alpha-particle emitting radioactive impurities must be strictly controlled. Therefore, new NAA methods have been established using a HTS(Hydraulic Transfer System) irradiation facility and a background reduction method. For eliminating or stabilizing fluctuated background caused by Rn-222 and its progeny nuclides in air, a nitrogen purging system is used. Using the developed NAA and gamma-spectrometry, ultra trace amounts of U(0.1ng/g) and Th(0.01ng/g) in an alumina ball and high purity silica used for an epoxy molding compound (EMC) could be determined.

Improvement of Interface Adhesionin Ball Grid Array Packages by Plasma Treatment (플라즈마 처리에 의한 BGA 패키지의 계면 접착력 향상)

  • 김경섭;한완옥;장의구
    • Journal of Welding and Joining
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    • v.18 no.4
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    • pp.64-69
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    • 2000
  • Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

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Effect of Ar Gas Plasma Treatment of Plastic Ball Grid Array Package (플라스틱 BGA 패키지의 아르곤 가스 플라즈마 처리 효과)

  • 신영의;김경섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.10
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    • pp.805-811
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    • 2000
  • Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

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Solder Joint Reliability of Bottom-leaded Plastic Package (BLP 패키지의 솔더 조인트의 신뢰성 연구)

  • 박주혁
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.05a
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    • pp.79-84
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    • 2002
  • The bottom-leaded plastic(BLP) packages have attracted substantial attention since its appearance in the electronic industry. Since the solder materials have relatively low creep resistance and are susceptible to low cycle fatigue, the life of the solder joints under the thermal loading is a critical issue for the reliability The represent study established a finite element model for the analysis of the solder joint reliability under thermal cyclic loading. An elasto-plastic constitutive relation was adopted for solder materials in the modeling and analysis. A 28-pin BLP assembly is modeled to investigate the effects of various epoxy molding compound, leadframe materials on solder joint reliability. The fatigue life of solder joint is estimated by the modified Coffin-Hanson equation. The two coefficients in the equation are also determined. A new design for lead is also evaluated by using finite element analysis. Parametric studies have been conducted to investigate the dependence of solder joint fatigue life on various package materials.

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Adhesion Strength Measurements of Cu-based Leadframe/EMC Interface

  • Lee, Ho-Young;Jin Yu
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.1-12
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    • 1999
  • Brown oxide and/or black oxide layers were formed on the surface of Cu-based leadframe by chemical oxidation of leadframe in hot alkaline solutions, and their growth characteristics were studied. Then, to measure the adhesion strength between leadframe and epoxy molding compound (EMC), oxidized leadframe samples were molded with EMC and machined to form sandwiched double-cantilever beam (SDCB) specimens and pull-out specimens, respectively. Results showed that the adhesion strength of un-oxidized leadframe/EMC interface was inherently very poor but could be increased drastically with the nucleation of acicular CuO precipitates on the surface of leadframe. The presence of smooth faceted $Cu_2O $ on the surfaces of leadframe gave close to zero interfacial fracture toughness (Gc) and reasonable pull strength (PS). A direct correlation between Gc and PS showed that PS can be a measure of Gc only in a limited range.

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Warpage Analysis for Top and Bottom Packages of Package-on-Package Processed with Thin Substrates (박형 기판을 사용한 Package-on-Package용 상부 패키지와 하부 패키지의 Warpage 분석)

  • Park, D.H.;Shin, S.J.;Ahn, S.G.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.61-68
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    • 2015
  • Warpage analysis has been performed for top and bottom packages of thin package-on-packages processed with different epoxy molding compounds (EMCs). Warpage deviation was measured for packages molded with the same EMCs and also the warpage deviations of top and bottom substrates themselves were characterized in order to identify the major factor causing the package warpage. For the top and bottom packages processed with thin substrates, the warpage deviation of the substrates was large, which made it difficult to figure out the effect of EMC properties on the package warpage. Top packages, where the molding area of $13mm{\times}13mm$ covered the most of the substrate area ($14mm{\times}14mm$), exhibited similar warpage behavior with changing the temperature. On the other hand, bottom packages, where the molding area was only $8mm{\times}8mm$, exhibited the complex warpage behavior due to simultaneous occurrence of (+) and (-) warpages on the same package. Accordingly, the bottom packages showed dissimilar temperature-warpage behavior even being processed with the same EMCs.

Fracture Toughness Measurement of the Semiconductor Encapsulant EMC and It's Application to Package (반도체 봉지수지의 파괴 인성치 측정 및 패키지 적용)

  • 김경섭;신영의;장의구
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.519-527
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    • 1997
  • The micro crack was occurred where the stress concentrated by the thermal stress which was induced during the cooling period after molding process or by the various reliability tests. In order to estimate the possibility of development from inside micro crack to outside fracture, the fracture toughness of EMC should be measured under the various applicable condition. But study was conducted very rarely for the above area. In order to provide a was to decide the fracture resistance of EMC (Epoxy Molding Compound) of plastic package which is produced by using transfer molding method, measuring fracture is studied. The specimens were made with various EMC material. The diverse combination of test conditions, such as different temperature, temperature /humidity conditions, different filler shapes, and post cure treatment, were tried to examine the effects of environmental condition on the fracture toughness. This study proposed a way which could improve the reliability of LOC(Lead On Chip) type package by comparing the measured $J_{IC}$ of EMC and the calculated J-integral value from FEM(Finite Element Method). The measured $K_{IC}$ value of EMC above glass transition temperature dropped sharply as the temperature increased. The $K_{IC}$ was observed to be higher before the post cure treatment than after the post cure treatment. The change of $J_{IC}$ was significant by time change. J-integral was calculated to have maximum value the angle of the direction of fracture at the lead tip was 0 degree in SOJ package and -30 degree in TSOP package. The results FEM simulation were well agreed with the results of measurement within 5% tolerance. The package crack was proved to be affected more by the structure than by the composing material of package. The structure and the composing material are the variables to reduce the package crack.ack.

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Measurement of EMC/PCB Interfacial Adhesion Energy of Chip Package Considering Warpage (휨을 고려한 칩 패키지의 EMC/PCB 계면 접합 에너지 측정)

  • Kim, Hyeong Jun;Ahn, Kwang Ho;Oh, Seung Jin;Kim, Do Han;Kim, Jae Sung;Kim, Eun Sook;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.101-105
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    • 2019
  • The adhesion reliability of the epoxy molding compound (EMC) and the printed circuit board (PCB) interface is critical to the quality and lifetime of the chip package since the EMC protects PCB from the external environment during the manufacturing, storage, and shipping processes. It is necessary to measure adhesion energy accurately to ensure product reliability by optimizing the manufacturing process during the development phase. This research deals with the measurement of EMC/PCB interfacial adhesion energy of chip package that has warpage induced by the coefficient of thermal expansion (CTE) mismatch. The double cantilever beam (DCB) test was conducted to measure adhesion energy, and the spring back force of specimens with warpage was compensated to calculate adhesion energy since the DCB test requires flat substrates. The result was verified by comparing the adhesion energy of flat chip packages come from the same manufacturing process.

Mechanochemical Treatment of Quartz for Preparation of EMC Materials

  • Shin, Hee-Young;Chae, Young-Bae;Park, Jai-Koo
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.315-324
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    • 2001
  • Mechanochemical effects that occurred in the fine grinding process of quartz particles using planetary ball mill was investigated. Quartz particles have been frequently utilized for optical materials, semiconductor molding materials. We determined that grinding for a long time can be create amorphous structures from the crystalline quartz by Mechanochemical effects. But, to be produced nano-composite particles that the critical grinding time reached for composite materials in a short time. Henceforth, a qualitative estimation must be conducted on the filler for EMC(Epoxy molding compound) materials. It can be produced mechanochemically treated composite materials and also an integrated grinding efficiency considering of the nano-composite amorphous structured particles. The mechanochemical characteristics were evaluated based on particle morphology, size distribution, specific surface area, density and the amount of amorphous phase materials into the particle surface. The grinding operation in the planetary ball mill can be classified into three stages. During the first stage, initial particle size was reduced for the increase of specific surface area. In the second stage, the specific surface areas increased in spite of the increase in particle size. The final stage as a critical grinding stage, the ground quartz was considered mechanochemically treated particles as a nano- composite amorphous structured particles. The development of amorphous phase on the particle surface was evaluated by X-ray diffractometry, thermal gravity analysis and IR spectrometer. The amount of amorphous phase of particles ground for 2048 minutes was 85.3% and 88.2% by X-ray analysis and thermal gravity analysis, respectively.

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Study on Recycling of Scraps from Process of Silicon-single-crystal for Semiconductor

  • Lee, Sang-Hoon;Lee, Kwan-Hee;Hiroshi Okamoto
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.705-710
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    • 2001
  • So for the quartz-glassy crucible wastes which was used for pulling up silicon-single-crystal ingot have simply reused for refractory raw-materials, or exhausted. This study is concerned on the advanced recycling-technology that is obtained by the proper micro-particle preparation process in order to fabricate fine amorphous silica filler for EMC (Epoxy Molding Compound). Therefore, this paper will deal with the physical, chemical and thermal pre-treatment process for efficient impurity removal and with the proper micro-particle process for producing the amorphous silicafiller. In view of the results, if the chemical, physical and thermal pre-treatment process for efficient elimination of impurity was passed, the purity of wasted fused glassy crucible is almost equal to the its of first anhydrous quartz glass. Thus, it was understood that this wasted fused glassy crucible was sufficient value of recycling, though it was damaged. When the ingot was fabricated, Phase transformation of crystallization by heat treatment (heat hysteresis phenomenon) was not changed. So, it was understood that as fused silica in the amorphous state, as It is, recycling possibility was very high

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