• 제목/요약/키워드: enhancement mode

검색결과 323건 처리시간 0.031초

동상분 제거에 의한 입체음향의 채널 분리도 개선 (An Enhancement of Channel Separability for Stereophonic Signals by Common Mode Rejection Method)

  • 권호열
    • 산업기술연구
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    • 제18권
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    • pp.439-442
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    • 1998
  • In this paper, we firstly suggested C&D (Common mode and Differential mode) model for the representation of a stereophonic signal. Then a measure of stereophonic channel separability is defined as the ratio of differential mode energy to total energy in frequency domain. After that, a new channel separability enhancement scheme is proposed by the control of common mode rejection. Finally, some experimental results are presented in order to verify our scheme.

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SVC 향상 계층의 빠른 인트라 부호화를 위한 효율적인 모드 결정 방법 (An Efficient Mode Decision Method for Fast Intra Encoding in the SVC Enhancement Layer)

  • 조미숙;강진미;정기동
    • 한국멀티미디어학회논문지
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    • 제14권7호
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    • pp.872-883
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    • 2011
  • H.264/AVC의 확장 표준으로 제정된 SVC는 향상 계층에서 압축 효율을 높이기 위해 인트라 예측과 인터 예측뿐만 아니라 계층 간 예측을 추가로 수행한다. 그로 인해 부호화 계산량이 더욱 증가되는 문제점이 있다. 본 논문은 SVC 공간적 향상 계층에서 계산량을 효과적으로 감소시키는 빠른 인트라 부호화를 위한 효율적인 모드 결정 방법을 제안한다. 제안 방법은 크게 2단계로 이루어진다. 1단계에서는 Intra_BL 모드의 RD 값을 이웃 매크로블록의 최적 RD 값과 비교하고 이웃 매크로블록의 최적 예측 모드와 유사한 특성을 이용하여 Intra_BL 모드를 미리 결정한다. 2단계에서는 기본 계층과 향상 계층의 인트라 예측 모드의 상관성을 이용하여 인트라 예측의 후보 모드를 선택적으로 줄임으로써 전체 부호화 시간을 감소시킨다. 실험결과, 제안하는 방법은 JSVM 9.16보다 전체 부호화 시간을 48.15~56.32% 감소하면서 화질의 변화는 거의 없었다.

색변환과 영상개선기법을 이용한 SPOT P-mode와 XS-mode 영상합성 (Merging of SPOT P-mode and XS-mode Images using Color Transformation and Image Enhancement)

  • 손덕재;이종훈
    • 한국측량학회지
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    • 제9권2호
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    • pp.103-113
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    • 1991
  • SPOT 수치영상자료를 이용한 지상좌표 계산 과정에서 지상기준점 및 검사점 입럭좌표의 정확도는 계산 결과의 신빙성에 커다란 영향을 준다. CRT 모니터상에 직접 나타난 SPOT 원초 영상은 일반적으로 지상물체의 판별과 점위치 결정에 적합하지 않으므로 전체영상의 대비개선, 영상소보간, 경계선강조, 공간필터처리 등 적절한 영상처리 기병의 적용이 필요하다. 본 연구에서는 대상지역의 3차원 위치 결정과 파장대특성분석에 이용되는 SPOT 위성영상의 시각분석에 필요한 수치영상처리기법의 원리를 고찰하고, 그 적용을 위한 알고리즘을 개발하여 프로그래밍 하였으며, 실제 P-mode 및 XS-mode의 SPOT 영상을 이용하여 고해상도 천연색영상인 SPOT P+XS 영상으로 합성하였다.

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실시간 열영상 대조비 개선을 위한 대역추출 및 플래토 평활화 알고리즘 적용 (Application of Local Histogram and Plateau Equalization Algorithm for Contrast Enhancement of Real Time Thermal Image)

  • 조흥기;김수곤;전희종
    • 대한전기학회논문지:시스템및제어부문D
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    • 제53권2호
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    • pp.76-85
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    • 2004
  • In this paper, the contrast enhancement method of thermal image is proposed and it is the plateau equalization algorithm using local histogram for the real time display of infrared imagery. Through hardware implementing, its practicality and adequacy are proved. Examinations are executed to verify the effect of contrast enhancement by bright control and contrast control automatic to the plateau value in the manual mode, and that verified the effect of contrast enhancement in the automatic mode and the practicality in the real system. According to the experiment results, the proposed "the application of local histogram and plateau equalization algorithm for contrast enhancement of real time thermal image"in this dissertation is the verified method for the thermal imaging contrast enhancement.

Effect of Subthreshold Slope on the Voltage Gain of Enhancement Mode Thin Film Transistors Fabricated Using Amorphous SiInZnO

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권5호
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    • pp.250-252
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    • 2017
  • High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

Ultrahuge Light Intensity in the Gap Region of a Bowtie Nanoantenna Coupled to a Low-mode-volume Photonic-crystal Nanocavity

  • Ebadi, Nassibeh;Yadipour, Reza;Baghban, Hamed
    • Current Optics and Photonics
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    • 제2권1호
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    • pp.85-89
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    • 2018
  • This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

1.5V-25MHz 대칭적 귀환전류 증가형 연속시간 전류 구동 CMOS 필터 (A 1.5V-25MHz symmetric feedback current enhancement continuous-time current-mode CMOS filter)

  • 장진영;윤광섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.514-517
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    • 1998
  • This paper proposed a symmetric feedback current enhancement circuit with 1.5V power supply to design a 3$^{rd}$ order butterworth low pass filter. The proposed filter designed on 0.8.mu.m CMOS n-well double poly/double metal process simulated in HSPICE composed of the 3dB frequency enhancement circuit and the unity-gain frequency enhancement circuit. The simulation result on the design filter shows the badnwith of 25MHz, phase of 92.6 .deg. and power consumption of 0.3mW..

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p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발 (Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication)

  • Jang, Won-Ho;Cha, Ho-Young
    • 한국정보통신학회논문지
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    • 제24권2호
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    • pp.321-324
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    • 2020
  • In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.

배관에서의 특정 비틀림 초음파 모드 송수신을 위한 합성 위상 조절 기법 (Synthetic Phase Tuning Technique for the Transduction of a Specific Ultrasonic Torsional Mode in a Pipe)

  • 김회웅;권영의;주영상;김종범;김윤영
    • 한국소음진동공학회논문집
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    • 제23권3호
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    • pp.249-257
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    • 2013
  • This study newly presents a synthetic phase tuning technique to suppress the unwanted torsional mode while enhancing the desired torsional mode in a pipe. Specifically, we aim at the enhancement of the first torsional mode and the suppression of the undesired, second torsional mode. Earlier efforts were to enhance the desired wave mode only in the hope that the enhancement results in the suppression of the unwanted wave mode. Unlike these efforts, the suggested technique makes the complete cancellation of the unwanted wave mode but it is shown to enhance the desired first mode for torsional wave problems. In the present study, the synthetic phase tuning is developed for the cancellation of the unwanted wave mode, meaning that the number of necessary experimental equipments is reduced. Simulation and experiment were carried out to check the effectiveness of the proposed method. As an application of the suggested technique, we investigated the reflection and mode conversion characteristics of the first torsional mode according to the step thickness variation in a stepped pipe.

Diameter Effect of Silver Nanorod Arrays to Surface-enhanced Raman Scattering

  • Gu, Geun Hoi;Kim, Min Young;Yoon, Hyeok Jin;Suh, Jung Sang
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.725-730
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    • 2014
  • The effect the diameter of silver nanorod arrays whose distance between the nanorods was uniform at 65 nm have on Surface-enhanced Raman Scattering (SERS) has been studied by varying the diameter from 28 to 51 nm. Nanorod length was fixed at approximately 62 nm, which is the optimum length for SERS by excitation with a 632.8 nm laser line. The transverse and longitudinal modes of the surface plasmon of these silver nanorods were near 400 and 630 nm, respectively. The extinction of the longitudinal mode increased with increasing nanorod diameter, while the transverse mode did not change significantly. High-quality SERS spectra of p-aminothiophenol and benzenethiol adsorbed on the tips of the silver nanorods were observed by excitation with a 632.8 nm laser line. The SERS enhancement increased with increasing nanorod diameter. We concluded that the SERS enhancement increases when the diameter of silver nanorods is increased mainly by increasing the excitation efficiency of the longitudinal mode. The enhancement factor for the silver nanorods with a 51 nm diameter was approximately $2{\times}10^7$.