• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.193-196
• /
• 2002

This paper presents the improvement of the boron penetration and the reverse short channel effect (RSCE) in the 130nm W/WNx/Poly-Si dual gate PMOSFET for a high performance embedded DRAM. In order to suppress the boron penetration, we studied a range in the process heat budget. It has shown that the process heat budget reduction results in suppression of the boron penetration. To suppress the RSCE, we experimented with the halo (large tilt implantation of the same type of impurities as those in the device well) implant condition near the source/drain. It has shown that the low angle of the halo implant results in the suppression of the RSCE. The experiment was supported from two-dimensional(2-D) simulation, TSUPREM4 and MEDICI.

• Journal of the Mineralogical Society of Korea
• /
• v.13 no.4
• /
• pp.171-185
• /
• 2000

Siliceous mudstones are embedded on a large scale in the Tertiary formations of Pohang area. Some useful zeolites such as NsP, (Na, TMA)P, analcime and hydroxysodalite were synthesized from the siliceous mudstones by treating with the variety of solution, i.e ., NaOH, NaOH+NaCl, NaOH, NaOH+$NaAlO_2$and NaOH+TMAOH at the low-temperature hydrothermal system ranging 60~12$0^{\circ}C$. Major precursor of zeolites is found as opal-CT in the zeolite-forming reaction. Smectite, which is included in considerable amounts in the mudstone, appears to play a major role of Al-source in the zeolite synthesis. In comparison, chalcedonic quartz and mica are rather insoluble in alkaline solution, and thus, these are observed as major impurities in the reaction products. An addition of $NaAlO_2$to NaOH solution is effective for eliminating these impurities in the reaction procedure, through these are partly dissolved when elevating the reaction temperature, concentration, and time. Phase change from NaP to hydroxysodalite takes place at the NaOH concentrations of 3.0~4.0 M, and the reaction is not sensitive to the temperature shift. NaP is more stable at lower NaOH concentration and higher activity of $Na_{+}$ whereas analcime is sensitive to the temperature change and stable at higher than $100^{\circ}C$ and 2.0~4.0 M in NaOH concentration. For the pure NaP synthesis without any other products, the treatment of mudstones with 1:1 solution of NaOH and $NaAlO _2$ turns out to be quite effective. NaP was successfully synthesized together with analcime at $100^{\circ}C$ as well as lower concentrations of NaOH+NaCl solution. In addition, the organic type, (Na, TMA)P was formed together with smectite in the 1:1 solution of NaOH and TMAOH.

• Journal of Sensor Science and Technology
• /
• v.31 no.4
• /
• pp.218-227
• /
• 2022

Triboelectric nanogenerators (TENGs), a new green energy, that have various potential applications, such as energy harvesters and self-powered sensors. The output performance of TENGs has been improving rapidly, and their output power significantly increased since they were first reported owing to improved triboelectrification materials and interfacial material engineering. Because the operation of a TENG is based on contact electrification in which electric charges are exchanged at the interface between two materials, its output can be increased by increasing the contact area and charge density. Material surface modification with microstructures or nanostructures has increased the output performance of TENGs significantly because not only does the sharp micro/nano morphology increases the contact area during friction, but it also increases the charge density. Chemical treatment in which ions or functional groups are added has also been used to improve the performance of TENGS by modifying the work functions, charge densities, and dielectric constants of the triboelectric materials. In addition, ultrahigh output power from TENGs without using new materials or treatments has been obtained in many studies in which special structures were designed to control the current release or to collect the charge current directly. In this review, we discuss physical and chemical treatments, bulk modifications, and interfacial engineering for enhancing TENG performance by improving contact electrification and electrostatic induction.

• The Journal of Korean Academy of Prosthodontics
• /
• v.22 no.1
• /
• pp.123-132
• /
• 1984

To evaluate the microstructure of various combination clasp joint in removable partial denture, the auther selected framework alloys (Type IV gold alloy, Dentaurium, Ticonium 100) and wrought wires (gold alloy, Ticonium) for this study. Twelve series of combination joints were made by investment soldering technic and wrought wire embedded casting technic. All specimens were cut cross-sectionally and longitudinally, then examined with metallurgical microscope. The results were as follows; Some diffusion was observed in the properly constructed combination clasp joints. In soldered joints, empolying precious alloys were more favorable than non-precious alloys. In castion joints, assemblage of same alloy between framework and wrought wire was superior to other groups. Some impurities were observed in both joints by technical problems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.154-155
• /
• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.