• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.82-83
• /
• 2005

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
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• pp.256-259
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• 2001

Rotating-compensator type ellipsometer was developed for spectroscopic measurements. For accurate data reduction, the azimuths of transmission axises of polarizer and analyzer, and the angular position of the fast axis of compensator should be determined through calibration process. In this paper, we present various calibration methods.

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.379-380
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• 2008

• Proceedings of the Optical Society of Korea Conference
• /
• 2008.07a
• /
• pp.255-256
• /
• 2008

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.345-346
• /
• 2006

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.451-452
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• 2006

• Proceedings of the Optical Society of Korea Conference
• /
• 1997.08a
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• pp.17-17
• /
• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.18-18
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• 1998

(No Abstract.see/full/text)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.