• Journal of Magnetics
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• v.12 no.2
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• pp.64-67
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• 2007

Electronic structures of ordered double perovskites $Ba_2MReO_6$ (M=Mn, Fe, Co, and Ni) are investigated by using the linearized muffin-tin orbitals band method in the local spin-density approximation (LSDA) and the LSDA+U method. The half-metallic ferrimagnetic ground states are obtained for M=Fe and Ni in the LSDA+U, whereas the insulating ground state is obtained for M=Mn in the LSDA+U incorporating the spinorbit interaction. For M= Co, the antiferromagnetic ground state is stabilized in the LSDA+U by invoking the structural distortion.

• Current Optics and Photonics
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• v.7 no.3
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• pp.304-309
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• 2023

In this study, a binary dielectric annular nanoring lens is proposed to cover the full range of optical phase. The lens is designed numerically, based on the effective-medium theory. The performance of the proposed lens is verified for the cases of single-focal and dual-focal lenses. The efficiency of a single-focal lens is improved by 17.19% compared to a binary dielectric lens, and that of a dual-focal lens shows enhancements of 13.11% and 49.41% at the two focal points. This lens design can be applied to other optical components with axially symmetric structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.446-449
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• 2004

We developed a dynamic logic architecture which resulted better leakage current, lower power consumption and less area compared to the conventional dynamic logic structures. We demonstrated the advantage from HSPICE simulation and test chip design has been completed.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.287-289
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• 2013

How the different thickness of thin films of black-P has an effect on its electronic band structure and structure has been studied by using SIESTA code. Although the interaction between the thin films has something to do with band reduction, it does not affect the inter-atomic distance between two nearest neighbour puckered layers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.392-401
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• 2012

This paper gives a electromagnetic coupling mechanism of the high altitude electromagnetic pulse (HEMP) into large- scale underground multilayer structures using analytic and numerical methods. The modeling methods are firstly addressed to the HEMP source which can be generated by intentional nuclear explosion. The instantaneous and intense electromagnetic pulse of the HEMP source is concerned from DC to 100 MHz band, because the power spectrum of the HEMP is rapidly decreased under -30 dB over the 100 MHz band. Through this range, a penetrated electric field distribution is computed within the large-scale underground multilayer structures. As a result, the penetrated electric field intensities at 0.1 and 1 MHz are about 10 and 5 kV/m, respectively. Therefore, additional shielding techniques are introduced to protect buried structures within the large-scale underground structures such as high-lossy material and filtering structures (wire screen).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.310-313
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• 2002

Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.362-363
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• 2005

The objectives of this paper are to achieve good planarization of the deposited film and to improve deposition efficiency of multi-layer structures by using surface-micromaching process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages and disadvantages of CMP for MEMS structures are observed respectively by using the test patterns with structures larger than 1 um line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of slurries: ILD1300 and Nalco2371. And then, the experiments were conducted based on the pretest.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.302-302
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• 2011

Fabrications of metal-organic hybrid networks attracted much attention due to possible applications in gas storages, heterogeneous catalyses, information storages, and opto-electronic devices. One way to construct three-dimensional hybrid structures is to make the arrays of planar or linear metal-organic hybrid structures which are linked through electrostatic interactions. As a model study, we fabricated the arrays of one-dimensional hybrid chains and investigated inter-chain interactions between adjacent hybrid chains using scanning tunneling microscopy (STM) and spectroscopy (STS) on Ag(111). Brominated anthracene molecules were used to grow the arrays of hybrid chains on Ag(111). We proposed atomic models for the observed structures. Linear chains are made of repetition of Ag-anthracene units. Br atoms are attached to anthracene molecules through Br-H structures which mediate inter-chain interactions. Two different apparent heights were observed in anthracene molecules. Molecules having a Br-H connection look brighter than those with two connections due to electronic effect. When a chain is laterally manipulated with STM tip, Br atoms move together with the chain implying that Br-H inter-chain interactions are quite strong.

• Current Applied Physics
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• v.18 no.11
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• pp.1225-1229
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• 2018

In this paper, we investigated the electronic structures and defect states of $SrLaMgTaO_6$ (SLMTO) double perovskite structures by using resonant inelastic x-ray scattering. Recently, $Eu^{3+}$ doped SLMTO red phosphors have been vigorously investigated due to their higher red emission efficiency compared to commercial white light emitting diodes (W-LED). However, a comprehensive understanding on the electronic structures and defect states of host SLMTO compounds, which are specifically related to the W-LED and photoluminescence (PL), is far from complete. Here, we found that the PL spectra of SLMTO powder compounds sintered at a higher temperature, $1400^{\circ}C$, were weaker in the blue emission regions (at around 400 nm) and became enhanced in near infrared (NIR) regions compared to those sintered at $1200^{\circ}C$. To elucidate the difference of the PL spectra, we performed resonant inelastic x-ray spectroscopy (RIXS) at Ta L-edge. Our RIXS result implies that the microscopic origin of different PL spectra is not relevant to the Ta-related defects and oxygen vacancies.