• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.241-252
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• 2024

With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as microLEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1594-1596
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• 2004

Film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration are fabricated by a novel process. In contrast to the conventional FBAR structure, the newly fabricated resonator doesn't employ any supporting layer below or above it, so that the properties of piezoelectric layer are not influenced by the bottom electrode material. FBAR devices with Mo/AlN/Metal configuration are also fabricated. The frequency response characteristics ($S_{11}$) of the devices fabricated using the proposed process are compared with those of the conventional devices. The return losses are also estimated, in terms of the kind and thickness of bottom electrode materials.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.589-590
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• 2013

The fast development of electronic devices towards wireless, portable and multi-functionality desperately needs the self-powered and low maintenance power sources. The possibility to coupling the nanogenerator to wearable and portable electronic device facilitates the self powered device with independent and self sustained power source. Nanogenerator has ability to convert the low frequency mechanical vibration to electrical energy which is utilized to drive the electronic device [1]. The self powered power source has the ability to generate the power from environment and human activity has attracted much interest because of place and time independent. The human body motion based energy harvesting has created huge impact for future self powered electronics device applications. The power generated from the human body motion is enough to operate the future electronic devices. The energy harvesting from human body motion based on triboelectric effect has simple, cost-effective method [2, 3] and meet the required power density of devices. However, its output is still insufficient to driving electronic devices in continues manner so new technology and new device architecture required to meet required power. In the present work, we have fabricated the triboelectric nanogenerator using PDMS polymer. We have studied detail about the power output of the device with respect to different polymer thickness and varied separation distance.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.57-61
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• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.

• Journal of the Korea Safety Management & Science
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• v.26 no.1
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• pp.31-38
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• 2024

In this paper, as there are many cases of fires occurring due to the failure or inoperability of the thermostat of electronic products, the purpose is to test and analyze the risks and probabilities through fire cases and reproduction experiments, and suggest countermeasures. Among electronic products, water purifiers are composed of a refrigerant system with a compressor to make cold water, a heating device to make hot water, and an electric device used as an energy source. Due to the nature of the water purifier manufacturing, these devices are subject to a lot of moisture and dust. etc. exist in large quantities and use electrical energy, so there is a possibility of fire due to short circuit in the wire, electrical abnormal overheating (tracking phenomenon) in the thermostat, electronic board, starting relay, etc., and overheating of the heating device (Band Heater). there is. Therefore, in order to prevent fires from these devices, a system to remove foreign substances inside the water purifier is necessary, the use of heat-resistant (fire-resistant) wires for electrical devices is essential, and the use of non-combustible materials (semi-combustible materials) for each part is necessary to prevent fire. The risk must be eliminated through prevention and combustion expansion prevention devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• International Journal of Computer Science & Network Security
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• v.22 no.12
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• pp.71-78
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• 2022

Electronic measuring devices have an important role in agricultural projects and in various fields. Electronic measuring devices play a vital role in controlling and saving soil information. They are designed to measure the temperature, acidity and moisture of the soil. In this paper, a new methodology to manage irrigation and soil fertility using an electronic system is proposed. This is designed to operate the electronic irrigation and adds inorganic fertilizers automatically. This paper also explains the concept of remote management and control of agricultural projects using electronic soil measurement devices. The proposed methodology is aimed at managing the electronic irrigation process, reading the moisture percentage, elements of soil and controlling the addition of inorganic fertilizers. The system also helps in sending alert messages to the user when an error occurs in measuring the percentage of soil moisture specified for crop and a warning message when change happens to the fertility of soil as many workers find difficulty in daily checking of soil and operating agricultural machines such as irrigation machine and soil fertilizing machine, especially in large projects.

• Electronics and Telecommunications Trends
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• v.32 no.6
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• pp.17-26
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• 2017

Electronic packaging technology is a technology that easily connects devices to the outside. The fourth industrial revolution is thought to be possible with the advancement of certain devices. The advancement of these devices must be accompanied by innovations in electronic packaging that connects the devices to the outside world, allowing their performances to be implemented at the system level. In this paper, the development trends of 2.5D/3D technology, heterogeneous integration technology, ultrafine interconnection technology, and heat dissipation technology will be examined, and the development direction of these technologies will be discussed.

• Journal of Semiconductor Engineering
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• v.2 no.3
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• pp.142-153
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• 2021

Recent research on synaptic devices has been reviewed from the perspective of hardware-based neuromorphic computing. In addition, the backgrounds of neuromorphic computing and two training methods for hardware-based neuromorphic computing are described in detail. Moreover, two types of memristor- and CMOS-based synaptic devices were compared in terms of both the required performance metrics and low-power applications. Based on a review of recent studies, additional power-scalable synaptic devices such as tunnel field-effect transistors are suggested for a plausible candidate for neuromorphic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.