Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Hidden Innovations in the Fourth Industrial Revolution: Electronic Packaging Technology

4차 산업혁명의 숨은 혁신 기술: 전자 패키징 기술

  • Published : 2017.12.01
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Abstract

Electronic packaging technology is a technology that easily connects devices to the outside. The fourth industrial revolution is thought to be possible with the advancement of certain devices. The advancement of these devices must be accompanied by innovations in electronic packaging that connects the devices to the outside world, allowing their performances to be implemented at the system level. In this paper, the development trends of 2.5D/3D technology, heterogeneous integration technology, ultrafine interconnection technology, and heat dissipation technology will be examined, and the development direction of these technologies will be discussed.

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References

  1. 백승찬, "4차산업혁명에 관심있는 사람은 40대 남성," 경향신문, 2017. 9. 7.
  2. ECTC, "Major Topics, Call for Papers," Accessed 2017. http://www.ectc.net/abstracts/callforpapers2018.pdf
  3. The Processor-Memory Bottleneck, Accessed 2017. http://www.pcguide.com/ref/ram/timingBottleneck-c.html
  4. J. Kim and Y. Kim, "HBM: Memory Solution for Bandwidth-Hungry Processors," IEEE Hot Chips 26 Symp. (HCS), Cupertino, CA, USA, Aug. 12, 2014, pp. 1-24.
  5. Fedscoop, "The Era of AI Computing," Accessed 2017. https://www.fedscoop.com/era-ai-computing/
  6. 한주엽, "차기아이패드PC보다빨라진다... A11X SoC HBM 첫접목시도," 전자신문, 2017. 8. 24.
  7. 한주엽, "엔비디아, 16나노GPU 탑재테슬라P100 출시... '인공지능.자율주행차.VR' 시장진격," 전자신문, 2016. 4. 6.
  8. Wikipedia, "High Bandwidth Memory," Accessed 2017. https://en.wikipedia.org/wiki/High_Bandwidth_Memory#cite_note-16
  9. D. Taneja et al., "Understanding the Behavior of SnAg Bumps at $10{\mu}m$ Pitch and Below for Imaging and Microdisplay Application," IEEE Electron. Components Technol. Conf., LasVegas, NV, USA, May 31-June 3, 2016, pp. 361-367.
  10. J.-A. Carballo et al., "ITRS 2.0: Toward a Re-framing of the Semiconductor Technology Roadmap," IEEE Int. Conf. Comput. Des., Seoul, Rep. of Korea, 2014, pp. 139-146.
  11. 김영준, "[대한민국과학자]무어의 법칙 대체할 '김의 법칙 주장'... 김정호 KAIST 전기 및 전자공학부 교수," 전자신문, 2017. 4. 2.
  12. H. Mujtaba, "NVIDIA Pascal GPU's Double Precision Performance Rated at Over 4 TFLOPs, 16nm FinFET Architecture Confirmed - Volta GPU Peaks at Over 7 TFLOPs, 1.2 TB/s HBM2," Accessed 2017. http://wccftech.com/nvidia-pascal-volta-gpus-sc15/
  13. D. Green, "Common Heterogeneous Integration and IP Reuse Strategies (CHIPS)," Accessed 2017. https://www.darpa.mil/program/common-heterogeneous-integrationand-ip-reuse-strategies
  14. W.-S. Lee et al., "A Study of the Effectiveness of Underfill in the High Bandwith Memory with TSV," Int. Symp. Microelectron., vol. 2013, no. 1, 2013, pp. 810-813.
  15. A. Eitan and K.Y. Hung, "Thermo-Compression Bonding for Fine-Pitch Copper-Pillar Flip-Chip Interconnect- Tool Features as Enablers of Unique Technology," IEEE Int. Conf. Comput. Des., San Diego, CA, USA, May 26-29, 2015, pp. 460-464.
  16. S. Ahn et al., "Wafer Level Multi-chip Gang Bonding Using TCNCF," IEEE Int. Conf. Comput. Des., Las Vegas, NV, USA, May 31-June 3, 2016, pp. 122-127.
  17. N. Asahi et al., "High Productivity Thermal Compression Bonding for 3D IC," IEEE Int. 3D Syst. Integr. Conf., Sendai, Japan, 2015, pp. 129-133.
  18. Y. Zhou et al., "Thermal Characterization of Polycrystalline Diamond Thin Film Heat Spreaders Grown on GaN HEMTs," Appl. Phys. Lett., vol. 111, no. 4, 2017.
  19. A. Wang, M.J. Tadjer, and F. Calle, "Simulation of Thermal Management in AlGaN/GaN HEMTs with Integrated Diamond Heat Spreaders," Semicond. Sci. Technol., vol. 28, 2013.
  20. H.C. Chiu et al., "High-Performance, Micromachined GaN-on-Si High-Electron-Mobility Transistor with Backside Diamondlike Carbon/Titanium Heat-Dissipation Layer," Appl. Phys. Exp., vol. 8, no. 1, 2015, pp. 1-4.
  21. S. Cheng et al., "Enhanced Lateral Heat Dissipation Packaging Structure for GaN HEMTs on Si Substrate," Appl. Thermal Eng., vol. 51, no. 1-2, 2013, pp. 20-24. https://doi.org/10.1016/j.applthermaleng.2012.08.009
  22. K. Vladimirova et al., "Innovative Heat Removal Structure for Power Devices - The Drift Region Integrated Micro-Channel Cooler," Int. Symp. Power Semicond. Dev. IC's, San Diego, CA, USA, May 23-26, 2011, pp. 332-335.
  23. J.L. Xie et al., "Multi Nozzle Array Spray Cooling for Large Area High Power Device in a Closed Loop System," Int. J. Heat Mass Transfer, vol. 78, Nov. 2014, pp. 1177-1186. https://doi.org/10.1016/j.ijheatmasstransfer.2014.07.067
  24. N. Otsuka et al., "Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors," Japanese J. Appl. Phys., vol. 50, no. 4s, 2011, pp. 1-5.
  25. Y.W. Park et al., "Development of an Aluminum Flat Heat Pipe with Carbon Wire Wick," Joint 18th Int. Heat Pipe Conf. 12th Int. Heat Pipe Symp., Jeju, Rep. of Korea, June 12-16, 2016.
  26. S.H. Moon, Y.W. Park, and H.M. Yang, "A Single Unit Cooling Fins Aluminum Heat Pipe for 100W Socket Type COB LED Lamp," Joint 18th Int. Heat Pipe Conf. 12th Int. Heat Pipe Symp., Jeju, Rep. of Korea, June 12-16, 2016.