• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.525-528
• /
• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• 한국전기전자재료학회논문지
• /
• 제12권1호
• /
• pp.11-17
• /
• 1999

Aging characteristics of the crosslinked polyethylene have been measured after applying electrical, thermal and combined stresses. ICP and FT-IR measurements confirmed diffusion of low molecular weight components such as antioxidant and presence of carbonyl group. Carbonyl group of aged crosslinked polyethylene under combined stress was detected by FT-IR. As deterioration of the crosslinked polyethylene progresses, crystallinity degree and density decrease. Also, dielectric properties have been measured by tan $\delta$ and $\varepsilon$$_{r}$ measurements. The three-parameter Weibull distribution was found to be the best suited among other probabilistic distribution representing the dielectric breakdown strength of aged crosslinked polyethylene. The scale parameter and location parameter decreases as the applied stress increases. The shape parameter increases as the stress increases.s.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
• /
• pp.26-26
• /
• 2006

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
• /
• pp.17-17
• /
• 2005

• 융합정보논문지
• /
• 제12권2호
• /
• pp.127-133
• /
• 2022

ITO와 CNT를 적용한 전극을 코팅하여 제작한 대전입자형 전자종이 디스플레이 패널을 제작하여 내구성 및 전기광학적 특성을 비교한다. ITO 전극의 면저항은 10(ohm/sq.)이고 CNT 전극의 면저항은 300, 600, 1000(ohm/sq.)이며 내구성 측정을 위하여 물리적 충격 및 유연성 측정을 진행한다. ITO 전극의 경우 40회의 충격과 10mm의 곡률 반지름에서부터 변화가 시작되나 CNT 전극에서는 변화가 측정되지 않는다. 입자 이동, 반사율 및 응답 시간 측정에 필요한 구동 전압, 전계 등 전기광학 측정결과 CNT 전극은 ITO 전극과 유사한 결과를 얻었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 ITC-CSCC -2
• /
• pp.1125-1128
• /
• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• 대한의용생체공학회:학술대회논문집
• /
• 대한의용생체공학회 1992년도 춘계학술대회
• /
• pp.148-151
• /
• 1992

There is a definite requirement to continuously monitor the operating characteristics of radiation therapy machines. It is advisable to monitor the symmetry, flatness, and energy stability of x-ray beams. The semiconductor system was developed using commercially available rectifier diode for th assessment of quality assurance In radiation therapy, which is capable of the above measurements. The beam characteristics of 6MV, 10MV and 21MV photon of Microtron electron accelerator were measured using seven-diodes as detectors and the results were compared with that of using a film results dosimetry with a X-Y plotter. The seven-diode detetor is versatile enough to be used for checking beam profile, flatness, symmetry and energy.

• Current Optics and Photonics
• /
• 제8권1호
• /
• pp.80-85
• /
• 2024

Numerical values of the Auger coefficient and the free carrier absorption (FCA) coefficient are extracted by applying deep neural networks (DNNs) to the L-I characteristics of 850 nm GaAs/AlGaAs laser diodes. Two elemental DNNs are used to extract each coefficient sequentially. The fidelity of the extracted values is established through meticulous correlation of L-I characteristics bridging the realms of simulations and measurements. The methodology presented in this paper offers a way to accurately extract the Auger and FCA coefficients, which were traditionally treated as fitting parameters. It is anticipated that this approach will be applicable to other types of opto-electronic devices as well.

• 한국전기전자재료학회논문지
• /
• 제18권12호
• /
• pp.1075-1079
• /
• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.3-4
• /
• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.