• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.11-17
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• 1999

Aging characteristics of the crosslinked polyethylene have been measured after applying electrical, thermal and combined stresses. ICP and FT-IR measurements confirmed diffusion of low molecular weight components such as antioxidant and presence of carbonyl group. Carbonyl group of aged crosslinked polyethylene under combined stress was detected by FT-IR. As deterioration of the crosslinked polyethylene progresses, crystallinity degree and density decrease. Also, dielectric properties have been measured by tan $\delta$ and $\varepsilon$$_{r}$ measurements. The three-parameter Weibull distribution was found to be the best suited among other probabilistic distribution representing the dielectric breakdown strength of aged crosslinked polyethylene. The scale parameter and location parameter decreases as the applied stress increases. The shape parameter increases as the stress increases.s.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.26-26
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• 2006

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.17-17
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• 2005

• Journal of Convergence for Information Technology
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• v.12 no.2
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• pp.127-133
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• 2022

Two types of charged particle-type electronic paper display panels with electrodes using ITO and CNT are fabricated to compare durability and electro-optical characteristics. The sheet resistance of the ITO electrode is 10 (ohm/sq.), and the sheet resistance of the CNT electrode is 300, 600, 1000 (ohm/sq.), and durability is carried out by impact and flexibility measurements. Variation in case of the ITO electrode begins at shocks of 40 times and curvature radius of 10 mm, and no change is observed in the CNT electrode. The driving voltage, electric field required for particle movement, reflectivity, and response time measurements show similar results for all ITO and CNT electrodes.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• Proceedings of the KOSOMBE Conference
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• v.1992 no.05
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• pp.148-151
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• 1992

There is a definite requirement to continuously monitor the operating characteristics of radiation therapy machines. It is advisable to monitor the symmetry, flatness, and energy stability of x-ray beams. The semiconductor system was developed using commercially available rectifier diode for th assessment of quality assurance In radiation therapy, which is capable of the above measurements. The beam characteristics of 6MV, 10MV and 21MV photon of Microtron electron accelerator were measured using seven-diodes as detectors and the results were compared with that of using a film results dosimetry with a X-Y plotter. The seven-diode detetor is versatile enough to be used for checking beam profile, flatness, symmetry and energy.

• Current Optics and Photonics
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• v.8 no.1
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• pp.80-85
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• 2024

Numerical values of the Auger coefficient and the free carrier absorption (FCA) coefficient are extracted by applying deep neural networks (DNNs) to the L-I characteristics of 850 nm GaAs/AlGaAs laser diodes. Two elemental DNNs are used to extract each coefficient sequentially. The fidelity of the extracted values is established through meticulous correlation of L-I characteristics bridging the realms of simulations and measurements. The methodology presented in this paper offers a way to accurately extract the Auger and FCA coefficients, which were traditionally treated as fitting parameters. It is anticipated that this approach will be applicable to other types of opto-electronic devices as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1075-1079
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• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.3-4
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• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.