• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.106-107
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.64-64
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.15.2-15.2
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• 2006

• Journal of the Korean Society for Heat Treatment
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• v.24 no.3
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.193-197
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• 2023

Transparent and conducting titanium (Ti) doped indium oxide (TIO) thin films were deposited on the poly-imide (PI) substrate with radio frequency magnetron sputtering and then electron irradiation was conducted on the TIO film's surface to investigate the effect electron irradiation on the crystallization and opto-electrical properties of the films. All x-ray diffraction (XRD) pattern showed two diffraction peaks of the In₂O₂ (431) and (444) planes with regardless of the electron beam irradiation energy. In the AFM analysis, the surface roughness of as deposited films was 3.29 nm, while the films electron irradiated at 700 eV, show a lower RMS roughness of 2.62 nm. In this study, the FOM of as deposited TIO films is 6.82 × 10^-3 Ω^-1, while the films electron irradiated at 500 eV show the higher FOM value of 1.0 × 10^-2 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation at 500 eV is the one of effective methods of crystallization and enhancement of opto-electrical performance of TIO thin film deposited on the PI substrate.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.219-223
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• 2009

$TiO_2$ doped with $Er^{3+\;and\;Yb^{3+}$ was used for fabricating a scattering layer and a nano-crystalline $TiO_2$ electrode layer to be used in dye-sensitized solar cells. The material was prepared using a new sol-gel combustion hybrid method with acetylene black as fuel. The $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide powder synthesized at 700oC had embossed structure morphology with a size between 27 to 54 nm that agglomerated to produce micron size particles, as observed by the scanning electron micrographs. The XRD patterns showed that the $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide had an amorphous structure, while using the same method without doping $Er^{3+}\;or\;Yb^{3+},\;TiO_2$ was obtained in the crystallite form with thea dominance of rutile phase. Fabricating a bilayer structure consisting of nano-crystalline $TiO_2$ and the synthesized $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide showed better scattering property, with an overall increase of 15.6% in efficiency of the solar cell with respect to a single nano-crystalline $TiO_2$ layer.

• Journal of Powder Materials
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• v.26 no.1
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• pp.49-57
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• 2019

Layered $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode materials single- and dual-doped by the rare-earth elements Ce and Nd are successfully fabricated by using a coprecipitation-assisted solid-phase method. For comparison purposes, non-doping pristine $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode material is also prepared using the same method. The crystal structure, morphology, and electrochemical performances are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, and electrochemical techniques. The XRD data demonstrates that all prepared samples maintain a typical ${\alpha}-NaFeO_2$-layered structure with the R-3m space group, and that the doped samples with Ce and/or Nd have lower cation mixing than that of pristine samples without doping. The results of SEM and EDS show that doped elements are uniformly distributed in all samples. The electrochemical performances of all doped samples are better than those of pristine samples without doping. In addition, the Ce/Nd dual-doped cathode material shows the best cycling performance and the least capacity loss. At a 10 C-rate, the electrodes of Ce/Nd dual-doped cathode material exhibit good capacity retention of 72.7, 58.5, and 45.2% after 100, 200, and 300 cycles, respectively, compared to those of pristine samples without doping (24.4, 11.1, and 8.0%).

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.977-980
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• 2002

Using the micro-pulling down method, $Nd_2O_3$ doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1 mm diameter and 30∼35 mm length. The homogeneous distributions of $Nd_2O_3$ concentration were confirmed by the electron probe micro analysis. The absorption and photoluminescence spectra were measured with respect to the $Nd_2O_3$ doping.

• Progress in Superconductivity
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• v.12 no.2
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• pp.99-103
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• 2011

We performed angle resolved photoelectron spectroscopy (ARPES) studies on Ru doped $BaFe_2As_2$ with various Ru contents. Ru, which is doped into a parent compound $BaFe_2As_2$ and substitute Fe, does not donate or accept electrons. However, it induces superconductivity. From ARPES data along the high symmetry cuts and Fermi surface maps, we investigate the electron correlation and carrier density at the Fermi level. We observe that the Fermi velocity increases with Ru doping, suggesting reduction in electron correlation. In addition, we address issues on local vs. itinerant pictures for the magnetism in $BaFe_2As_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.415.2-415.2
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• 2014

Cost-effective, robust devices for solid-state lighting industry that converts electricity to light revolutionize the current lighting industry. Phosphor materials used in these devices should be synthesized in a low-cost and effective method for use in WLEDs. In this presentation, the synthesis of Eu3+ ions doped BaMoO4 phosphor samples by a facile synthesis process for red component of WLEDs will be shown. The tetragonal phase of the host lattice was substantiated by the X-ray diffraction patterns. The morphological studies were carried out by using a field-emission scanning electron microscope and transmission electron microscope. These confirmed the formation of a shuttle like particles with perpendicular protrusions in the middle of the particle. The photoluminescence (PL) properties exhibited good emission with a high asymmetry ratio when excited with ultraviolet B wavelengths (~ 280-315 nm). The cathodoluminescence (CL) spectra showed similar results to the PL spectra, indicating the rich red emission. The results suggest that this phosphor is a good material as red region component in the development of tri-band UV excitation based WLEDs.