• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.94-98
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• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

• Progress in Superconductivity and Cryogenics
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• v.18 no.2
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• pp.14-17
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• 2016

Annealing as-grown electron-doped cuprates under a low oxygen-partial-pressure condition is a necessary step to achieve superconductivity. It has been recently found that the so-called protect annealing results in much better superconducting properties in terms of the superconducting transition temperature and volume fraction. In this article, we report on angle-resolved photoemission spectroscopy studies of a protect-annealed electron-doped cuprate $Pr_{0.9}La_{1.0}Ce_{0.1}CuO_4$ on annealing condition dependent superconducting and pseudo-gap properties. Remarkably, we found that the one showing a better superconducting property possesses almost no pseudo-gap while others have strong pseudo-gap feature due to an anti-ferromagnetic order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.870-873
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• 2001

The electron drift mobilitity of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethyl-3',5'-di-t-butylstilbenequinone(MBSQ) was measured by the time-of-flight technique. Energy gap of the polymer doped with 25wt% of MBSQ was 3.1 eV. The electron drift mobility was 2.98${\times}$10$\^$-6/$\textrm{cm}^2$/V$.$s at 293K. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel and Arrhenius formulations. The activation energy(E$\_$0/), Poole-Frenkel coefficient(${\beta}$) and effective temperature(T$\_$eff/) of the mobility are 0.815 eV, 1.73${\times}$10$\_$-4/ eV$.$cm$\^$1/2//V$\_$1/2/ and 6.43${\times}$10$^2$K, respectively.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.16-20
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• 2015

We investigated optical properties of an electron-doped copper oxide high temperature superconductor, $Pr_{0.85}LaCe_{0.15}CuO_4$ (PLCCO) single crystal. We obtained the optical conductivity from measured reflectance at various temperatures. We found our data contained c-axis longitudinal optical (LO) phonon modes due to miscut and intrinsic lattice distortion. We applied an extended Drude model to study the correlations between charge carriers in the system. The LO phonons appear as strong sharp peaks in the optical scattering rate. We tried to remove the LO phonon modes by using the energy loss function, which also shows the LO phonons as peaks, and could not remove them completely. We extracted the electron-boson spectral density function using a generalized Allen's formula. We observed that the resulting electron-boson density show similar temperature dependence as hole-doped cuprates.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.771-774
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• 2009

The Improved stability of organic light emitting diodes (OLEDs) containing lithium-quinolate (Liq) as the ETL doping material is investigated. The lifetime could be improved by threefold using the Liq-doped ETL structure. The improvement was attributed to the Liq-doped ETL, which improved hole-electron balance and has a good electrical stability. Additionally, when the Liq doped device was combined with an Mg/Al cathode, the OLED produced a longer lifetime than other device.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.73-78
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• 2016

$TiO_2$ nanoparticles were synthesized by a sol-gel process using titanium tetra isopropoxide as a precursor at room temperature. Ag-doped $TiO_2$ nanoparticles were prepared by photoreduction of $AgNO_3$ on $TiO_2$ under UV light irradiation and calcinated at $400^{\circ}C$. Ag-doped $TiO_2$ nanoparticles were characterized for their structural and morphological properties by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and transmission electron microscopy (TEM). The photocatalytic properties of the $TiO_2$ and Ag-doped $TiO_2$ nanoparticles were evaluated according to the degree of photocatalytic degradation of gaseous benzene under UV and visible light irradiation. To estimate the rate of photolysis under UV (${\lambda}=365nm$) and visible (${\lambda}{\geq}410nm$) light, the residual concentration of benzene was monitored by gas chromatography (GC). Both undoped/doped nanoparticles showed about 80 % of photolysis of benzene under UV light. However, under visible light irradiation Ag-doped $TiO_2$ nanoparticles exhibited a photocatalytic reaction toward the photodegradation of benzene more efficient than that of bare $TiO_2$. The enhanced photocatalytic reaction of Ag-doped $TiO_2$ nanoparticles is attributed to the decrease in the activation energy and to the existence of Ag in the $TiO_2$ host lattice, which increases the absorption capacity in the visible region by acting as an electron trapper and promotes charge separation of the photoinduced electrons ($e^-$) and holes ($h^+$). The use of Ag-doped $TiO_2$ nanoparticles preserved the option of an environmentally benign photocatalytic reaction using visible light; These particles can be applicable to environmental cleaning applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.177-180
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• 2001

The quantum effects in the channel of a $\delta$ -doped NMOSFET structures are investigated by solving Schrodinger and Poisson equations self-consistently. According to the scaling of MOSFET structures, electron distributions change by the strong energy quantization. However the presence of a low-doped epitaxial region produces a reduction of the electron effective field for a given charge sheet density and therefore, improves the electron effective mobility. We also focus the quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the fabrication of ultra short MOSFET's.