Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electron Drift Mobility in Stilbenquinone-Doped Polymer Film

Stilbenquinone이 도핑된 고분자 박막의 전자 이동도

  • 조종래 (부경대학교 공과대학 전자공학과) ;
  • 정재훈 (부경대학교 공과대학 전자공학과) ;
  • 손세모 (부경대학교 화상정보공학부) ;
  • 김강언 (부경대학교 공과대학 전자공학과) ;
  • 정수태 (부경대학교 공과대학 전자공학과)
  • Published : 2001.07.01
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Abstract

The electron drift mobilitity of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethyl-3',5'-di-t-butylstilbenequinone(MBSQ) was measured by the time-of-flight technique. Energy gap of the polymer doped with 25wt% of MBSQ was 3.1 eV. The electron drift mobility was 2.98${\times}$10$\^$-6/$\textrm{cm}^2$/V$.$s at 293K. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel and Arrhenius formulations. The activation energy(E$\_$0/), Poole-Frenkel coefficient(${\beta}$) and effective temperature(T$\_$eff/) of the mobility are 0.815 eV, 1.73${\times}$10$\_$-4/ eV$.$cm$\^$1/2//V$\_$1/2/ and 6.43${\times}$10$^2$K, respectively.

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