• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.91.1-91.1
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• 2012

지구 자기권의 입자분포는 지구 자기권의 상태와 태양풍의 물리적 상황에 따라 다르다. 가령, 정지궤도에서 고에너지 입자의 flux가 낮아지는 것이 관측된다. 이러한 flux dropout 기간은 대부분 storm main phase에 해당된다. 반면 태양풍의 속력이 상대적으로 높은 HSS(high speed stream)기간 동안에는 대부분 정지궤도에서의 고에너지 입자 flux가 높아지며 radiation belt의 고에너지 입자들의 seed electron 역할을 할 것으로 예상하고 있다. 본 연구에서는 GOSE 11 위성의 electron flux data와 태양풍의 속도를 이용하여 HSS, quiet time, flux dropout 기간을 정의 하였다. 또한, 지구로부터 7~8Re 떨어진 night side지역을 radiation belt의 trapping boundary 바로 바깥 경계지역과 같다고 가정하였다. 그리고 각 기간 동안 이 경계지역에서 입자들의 분포와 관련된 물리적 조건을 결정하는 것을 목표로 하였다. 이는 방사선 벨트 내부에서의 역학적 진화에 영향을 미칠 수 있다. 2007년 6월부터 2010년 8월까지 이러한 경계지역에 THEMIS 위성이 위치했을 때 ESA와 SST의 omni-directional flux를 이용하여 에너지에 대한 입자플럭스 분포 함수를 산출하였다. 또한 각 기간에 평균한 분포 함수를 가장 잘 나타낼 수 있는 해석적 함수를 도출하였다. 추가로, 경계지역에서의 입자들의 pitch angle 분포 패턴도 결정 하였다. 이 결과는 방사선 벨트의 전산모사에서 실질적인 경계 조건으로 사용될 수 있다.

• Journal of the Korean Wood Science and Technology
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• v.28 no.4
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• pp.17-24
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• 2000

The peroxidase activity was localized cytochemically to get an insight into its precise function in lignin biosynthesis. In this work, cerium chloride ($CeCl_3$) was used as a trapping agent for hydrogen peroxide ($H_2O_2$) generated from peroxidase. Seasonal variation of peroxidase activities in cambial region of Populus, Pinus, and Ginkgo was investigated at subcellular levels. Under transmission electron microscopy, electron dense deposits of cerium perhydroxide formed by reaction with $H_2O_2$ were observed in cambium and its immediate derivatives. The staining with $CeCl_3$ in cambium varied with growth seasons. The strongest $H_2O_2$ accumulation, regardless of tree species, appeared in May. Staining pattern of $CeCl_3$ in the cambium of poplar indicated that the production of peroxidase started in March before the opening of buds and reached the highest in May and then declined in August. Ginkgo and Pinus showed relatively late generation of $H_2O_2$ production when compared with Populus. Although Ginkgo and Pinus are classified into gymnosperms, however, the generation of peroxidase production and its duration was different from each other. Little staining appeared in all the tree samples collected in September before falling the leaves.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.1-5
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• 2010

In this paper, we directly compare the program efficiency of conventional channel hot electron (CHE) injection methods and a novel hot electron injection methods using substrate forward biases in our silicon-oxide-nitride-oxide-silicon (SONOS) cell. Compared with conventional CHE injection methods, the proposed injection method showed improved program efficiency including faster program operation at lower bias voltages as well as localized trapping features for multi-bit operation with a threshold voltage difference of 1 V at between the forward and reverse read. This program method is expected to be useful and widely applied for future nano-scale multi-bit SONOS memories.

• Carbon letters
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• v.14 no.2
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• pp.126-130
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• 2013

In this study, we present a more electrochemically enhanced electrode using activated carbon (AC)-sulfur (S) composite materials, which have high current density. The morphological and micro-structure properties were investigated by transmission electron microscopy. Quantity of sulfur was measured by thermogravimetric analysis analysis. The electrochemical behaviors were investigated by cyclic voltammetry. As a trapping carbon structure, AC could provide a porous structure for containing sulfur. We were able to confirm that the AC-S composite electrode had superior electrochemical activity.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1454-1456
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• 2007

The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.185-191
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• 1992

In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1315-1317
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• 1998

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.157-157
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• 1999

Electrochromic tungsten oxide films were prepared by the electron beam deposition, and the dependence of the electrochemical stability and the optical properties on the titanium concentration, and on the annealing temperature, that was investigated. coloring and bleaching experiments were repeated by cyclic voltammetry in a propylene carbonate solution of LiClO4. Spectrometry was used to assess the stability of the transmittance in the degraded films. Tungsten oxide films with titanium contents of about 10~15 mol% were found to be most stable, undergoing the least degradation during the repeated for coloring and bleaching cycles. The reason for this small amount of degradation was the reduction of lithium ion trapping sites in the films, which results in an increased durability. Tungsten oxide films with titanium contents of about 20 mol% were annealed at 20$0^{\circ}C$ for 1 hour, and this results showed that durability of films were increased.