• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.146-152
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• 2014

The temperature dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schr$\ddot{o}$dinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1998년도 학술발표회논문집
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• pp.131-133
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• 1998

Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rF power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution of electron temperature, electron density and electron energy distribution function were measured for discharge with same aspect ratio (R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density, electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, finally, we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• Journal of Information Display
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• 제10권4호
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• pp.158-163
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• 2009

There are two kinds of well-known electron emissions from metal: field and thermionic emission. For thermionic emission, electrons come out of a metal due to the thermal energy, whereas for field emission, electrons tunnel out of a metal through the strong electric field. In this study, the most general electron emission caused by the temperature and electric field with a free electron gas model was considered. The total current density of electron emission comes from the field emission effect, where the electron energy is lower than vacuum, and from the thermionic-emission effect, where the electron energy is higher than vacuum. The total current density of electron emission is shown as a function of the temperature for a constant electric field, and as a function of the electric field for a constant temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.91-91
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• 2005

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.802-804
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• 2003

The relative stabilities of weak binding clusters are sensitive to temperature due to the entropy effect. Thus, here we report significant changes in relative stabilities between two low-energy electron-water trimer structures and those between three low-energy electron-water pentamer structures, as the temperature increases. The trimer and pentamer show structural changes around 200 K.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2418-2420
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• 2005

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of $20{\sim}100mTorr$ Xenon pressure, $50{\sim}200W$ RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• Bulletin of the Korean Chemical Society
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• 제22권8호
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• pp.827-832
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• 2001

The excitation temperature and electron number density have been measured for end-on-view ICP discharge. In this work, end-on-view ICP-AES equipped with the newly developed “optical plasma interface (OPI)” was used to eliminate or remove the neg ative effects caused by end-on-plasma source. The axial excitation temperature was measured using analyte (Fe I) emission line data obtained with end-on-view ICP-AES. The axial electron number density was calculated by Saha-Eggert ionization equilibrium theory. In the present study, the effects of forward power, nebulizer gas flow rate and the presence of Na on the excitation temperature and electron number density have been investigated. For sample introduction, two kinds of nebulizers (pneumatic and ultrasonic nebulizer) were utilized.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1996년도 추계학술발표회논문집
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• pp.63-66
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• 1996

Electron temperature and electron density were measured in a radio-frequency(rf) inductively coupled plasma using probe measurements. Measurements were made in an argon discharge for pressures from 10 to 100mTorr and input rf power from 100 to 800W. Spatial distribution Electron temperature and electron density were measured for discharge with same aspect ratio. Electron temperature and Electron density were found to depend on both pressure and power. Electron density was creased with increasing pressure, but peaked in a 70mTorr discharge. Radial distribution of the electron density was peaked in the plasma fringes. These results were compared to a simple model of inductively coupled plasmas.