• Title/Summary/Keyword: electron gun

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PBMS의 교정 및 이를 이용한 진공 내 나노입자의 실시간 분석 연구

  • Kim, Dong-Bin;Mun, Ji-Hun;Kim, Hyeong-U;Kim, Deuk-Hyeon;Lee, Jun-Hui;Gang, Sang-U;Kim, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.91-91
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    • 2015
  • 반도체 공정의 발전에 의해 최근 생산되는 메모리 등은 십 수 나노미터까지 좁아진 선 폭을 갖게 되었다. 이러한 이유로, 기존에는 큰 문제를 발생시키지 않던 나노미터 영역의 입자들이 박막 증착 공정과 같은 반도체 제조공정 수율을 저감시키게 되었다. 따라서 오염입자의 유입을 막거나 제어하기 위해 transmission electron microscopy (TEM)나 scanning electron microscopy (SEM)과 같은 전자현미경을 활용한 비 실시간 입자 측정 방법 및 광원을 이용하는 in-situ particle monitor (ISPM) 및 전기적 이동도를 이용한 scanning mobility particle sizer (SMPS) 등 다양한 원리를 이용한 실시간 입자 측정방법이 현재 사용중에 있다. 이 중 진공 내 입자의 수농도를 측정하기 위해 개발된 particle beam mass spectrometer (PBMS) 기술은 박막 증착 공정 등 chemical vapor deposition (CVD) 방법을 이용하는 진공공정에서 활용 가능하여 개발이 진행되어 왔다. 본 연구에서는 PBMS의 한계점인 입자 밀도, 형상 등의 특성분석이 용이하도록 PBMS와 scanning electron microscopy (SEM), 그리고 energy dispersive spectroscopy (EDS) 기술을 결합하여 입자의 직경별 개수농도, 각 입자의 형상 및 성분을 함께 측정 가능하도록 하였다. 협소한 반도체 제조공정 내부 공간에 적용 가능하도록 기존 PBMS 대비 크기 또한 소형화 하였다. 각 구성요소인 공기역학 집속렌즈, electron gun, 편향판, 그리고 패러데이 컵의 설치 및 물리적인 교정을 진행한 후 입자발생장치를 통해 발생시킨 sodium chloride 입자를 상압 입자 측정 및 분류장치인 SMPS 장치를 이용하여 크기별로 분류시켜 압력차를 통해 PBMS로 유입시켜 측정을 진행하였다. 나노입자의 입경분포, 형상 및 성분을 측정결과를 토대로 장치의 측정정확도를 교정하였다. 교정된 장치를 이용하여 실제 박막 증착공정 챔버의 배기라인에서 발생하는 입자의 수농도, 형상 및 성분의 복합특성 측정이 가능하였으며, 최종적으로 실제 공정에 적용가능하도록 장치 교정을 완료하였다.

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The Study on Location and Adsorbate Interaction for Vanadium Species in $VO^{2+}-SAPO-5$ by Electron Spin Resonance and Electron Spin Echo Modulation Spectroscopies

  • Back Gern-Ho;Park Sung-Gun;Lee Chul-Wee
    • Journal of the Korean Magnetic Resonance Society
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    • v.9 no.2
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    • pp.138-154
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    • 2005
  • Vanadium-incorporated aluminophosphate molecular sieve $VO^{2+}-SAPO-5$ was studied by electron spin resonance (ESR) and electron spin echo modulation (ESEM) spectroscopies to determine the vanadium structure and interaction with various adsorbate molecules. It was found that the main species at low concentration of vanadium is a monomeric vanadium units in square pyramidal or distorted octahedral coordination, both in oxidation state (IV) for the calcined hydrated material and in oxidation state (V) for the calcined material. After calcinations in $O_2$ and exposure to moisture, only species A is observed with reduced intensities. It is suggested as a $VO(H_2O)_3^{2+}$ complex coordinated to two framework oxygen bonded aluminum. When calcined, hydrated $VO^{2+}-}SAPO-5$ is dehydrated at elevated temperature, a species loses its water ligands and transforms to $VO^{2+}$ ions coordinated to two framework oxygens (species B). Species B reduces its intensity, significantly after treatment with $O_2\;at\;600^{\circ}C$ for 5 h, thus suggesting oxidation of $V^{4+}\;to\;V^{5+}$. When dehydrated $VO^{2+}-SAPO-5$ contacts with $D_2O$ at room temperature, the EPR signal of species A is observed. Thus species assumed as a $VO^{2+}(O_f)_2(D_2O)_3$, by considering two framework oxygens. Adsorption of deuterated ethanol, propanol on dehydrated $VO^{2+}_{-}SAPO-5$ result in another new vanadium species E and F, respectively, which are identified as a $VO^{2+}-(CH_3CH_2OD)_3,\;VO^{2+}-(CH_3CH_2CH_2OD)_2$ complex. When deuterated benzene is adsorbed on dehydrated $VO^{2+}-SAPO-5$, another new vanadium species G, identified as a $VO^{2+}-(C_6D_6)$ is observed. Possible coordination geometries of these various complexes are discussed.

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Dependency of Phonon-limited Electron Mobility on Si Thickness in Strained SGOI (Silicon Germanium on Insulator) n-MOSFET (Strained SGOI n-MOSFET에서의 phonon-limited전자이동도의 Si두께 의존성)

  • Shim Tae-Hun;Park Jea-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.9 s.339
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    • pp.9-18
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    • 2005
  • To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

Development of an electron source using carbon nanotube field emittes for a high-brightness X-ray tube (탄소나노튜브를 이용한 고휘도 X-선원용 전자빔원 개발)

  • Kim, Seon-Kyu;Heo, Sung-Hwan;Cho, Sung-Oh
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.252-257
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    • 2005
  • A high-brightness electron beam source for a microfocus X-ray tube has been fabricated using a carbon-nanotube (CNT) field emitter. The electron source consists of cathode that includes a CNT field emitter, a beam-extracting grid, and an anode that accelerates that electron beam. The microfocus X-ray tube requires an electron beam with the diameter of less than 5 $\mu$m and beam current of higher than 30 $\mu$A at the position of the X-ray target. To satisfy the requirements, the geometries of the field emitter tips and the electrodes of the gun was optimized by calculating the electron trajectories and beam spatial profile with EGUN code. The CNT tips were fabricated with successive steps: a tungsten wire with the diameter of 200 $\mu$m was chemically etched and was subsequently coated with CNTs by chemical vapor deposition. The experiments of electron emission at the fabricated CNT tips were performed. The design characteristics and basic experimental results of the electron source are reported.

Development of Few-second 40 kV, 280 kW High Voltage Pulse Power Supply (수 초 지속 40 kV, 280 kW 고전압 펄스전원장치 개발)

  • Kim, S.C.;Nam, S.H.;Heo, H.;Heo, H.;Moon, C.;Kim, J.H.;Oh, S.S.;Yang, J.W.;Sho, J.H.
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.990-991
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    • 2015
  • To drive a magnetron injection gun, thsi paper decribes a design, fabrication and analysis results of proposed compact capacitor charging power supply (CCPS) formed resonant full-bridge inverter for electron gun power supply (EGPS). EGPS needs the -40 kV output voltage and 280 kW output power for few seconds continuously and have to be designed for the rise and fall time to be less than 1 ms with the ripple stability of output voltage of lower than 1%. In order to meet the requirements, we used eight resonant full-bridge modules operated in parallel. Each resonant full-bridge module can supply the current of 0.9 A and the voltage of 40 kV, and is operated by N-phase shift switching pattern. In this paper, we present the design, simulation and test results of interleaved CCPS.

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Echinostoma macrorchis (Digenea: Echinostomatidae): Metacercariae in Cipangopaludina chinensis malleata Snails and Adults from Experimental Rats in Korea

  • Sohn, Woon-Mok;Na, Byoung-Kuk
    • Parasites, Hosts and Diseases
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    • v.55 no.5
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    • pp.541-548
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    • 2017
  • A survey was performed to know the infection status of echinostome metacercariae in Cipangopaludina chinensis malleata snails from Korea. Total 75 snails collected in 5 localities, i.e., Imsil-gun, Jeollabuk-do, Hwasun-gun and Shinan-gun (Aphae and Jido), Jeollanam-do, and Jinju-si, Gyeongsangnam-do, were examined for metacercariae by the artificial digestion method. Infection rates of metacercariae were 80.0%, 66.7%, 100%, 60.0%, and 73.3%, and their densities were 39, 32, 183, 19, and 30 per snail infected, respectively. The metacercariae were round, $105-118{\times}105-118{\mu}m$ in size, with a thin cyst wall, collar spines on the head collar, and excretory granules in 2 canals of excretory tube. Adult flukes were elongated, ventrally curved, and $5,167{\times}939{\mu}m$ in average size. Head collar distinct, bearing 45 collar spines with 5 end groups on each side. Oral sucker subterminal, pharynx well developed, and esophagus somewhat short. Cirrus sac well developed, with a saccular seminal vesicle, and ventral sucker very large. Ovary elliptical and on the median line of the body. Testes tandem and slightly lobed. Eggs operculated, elliptical, and $90-103{\times}55-60{\mu}m$ in size. By scanning electron microscopy, the head collar was prominent with 45 collar spines resembling horns of younger stags. Scale-like tegumental spines were densely distributed on the body surface between the head collar and ventral sucker. Conclusively, it has been first confirmed that the life cycle of E. macrorchis is indigenously maintained in Korea, and C. chinensis malleata snails are popularly infected with the metacercariae of this echinostome.

Disjunct Distribution and Taxonomical Studies of Salix maximowiczii Kom. on the Genus Salix (Salicaceae) (버드나무과(科) 버드나무속(屬) 쪽버들의 격리분포(隔離分布) 및 분류학적(分類學的) 고찰(考察))

  • Park, Wan-Geun
    • Journal of Forest and Environmental Science
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    • v.11 no.1
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    • pp.61-71
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    • 1995
  • From Salix maximowiczii of the Korean Salix, morphological and palynological characters were investigated by stereoscopic, light, and scanning electron microscopes. Also, this study was eonducted to investigate the effect of meteorological factors on the disjunct distribution in Salix maximowiczii forests grown within the restricted region. 1. Morphological characters of S. maximowiczii clarified with the descriptions and figures. 2. The palynological description was made to the S. maximowiczii and identified distinctly species. 3. S. maximowiczii is distributed only in Baekdam and Hangyeryong valley of Mt. Sorak in Kangwon-do, and valley of height region in Kyeongseong-gun (Hamgyongbuk-do), Sinhueng-gun, and Pungsan-gun (Hamgyongnam-do) in North Korea. 4. Water factors was better than temperature factors in the influence of meteorological factors for disjunct distribution. 5. These ecological and taxonomical informations could be used in practical application for silvicultural prescription, such as erosion control forest, timber production, and development of green area in river bank.

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Growth and Properties of CrNx/TiNy/Al Based on N2 Gas Flow Rate for Solar Thermal Applications

  • Ju, Sang-Jun;Jang, Gun-Eik;Jang, Yeo-Won;Kim, Hyun-Hoo;Lee, Cheon
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.3
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    • pp.146-149
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    • 2016
  • The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N2 gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

Organic Nanotube Induced by Photocorrosion of CdS Nanorod

  • Choi, Sung-Won;Yoon, Joong-Ho;An, Myoung-Jin;Chae, Won-Sik;Cho, Hyeon-Mo;Choi, Moon-Gun;Kim, Yong-Rok
    • Bulletin of the Korean Chemical Society
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    • v.25 no.7
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    • pp.983-985
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    • 2004
  • PMMA-coated CdS nanorod was prepared by encapsulation of CdS nanorod through the polymerization process of PMMA on the surface of CdS nanorod. PMMA organic nanotube was then obtained from the elimination of the CdS nanorod by the photocorrosion. For the photocorrosion reaction of the CdS nanorod, monochromatic light was irradiated to the oxygen-saturated aqueous methyl viologen solution with PMMAcoated CdS nanorod. Photocorrosion reactions of PMMA-coated CdS nanorod were investigated and characterized by utilizing UV-Vis absorption, X-ray diffraction (XRD) and scanning electron microscopic (SEM) and transmission electron microscopic (TEM) images.

The Development of PHosphor Screen Formation For Oscilloscope Using Screen Printing Method (스크린 인쇄법을 이용한 오실로스코프용 형광막 제조 기술 개발)

  • Lee, Mi-Young;Kim, Young-Bea;Nam, Su-Yong
    • Journal of the Korean Graphic Arts Communication Society
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    • v.22 no.1
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    • pp.53-64
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    • 2004
  • The CRT(cathode ray tube) in oscilloscope consists of an electron gun, horizontal vertical deflection system and a phosphor screen. When the electron beam strikes the phosphor screen, the phosphor generates light. The phosphor screen has formed by CRT precipitation method. But, this method has some defects that are complex process, low yield, much consumption of raw-material, dirty working environment, waste problem, require of high cost. Moreover phosphor for oscilloscope used at present has been imported from Japan. Therefore developments of new phosphor and new method(the screen printing) top form phosphor screen for oscilloscope are required to improve these matters. This study was developed novel method(the screen printing) to form the phosphor screen for oscilloscope used new phosphor. This screen printing method has advantages of simple process, high yield, clean working environment, saving raw material and running-cost.

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