• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• v.2
• /
• pp.53-56
• /
• 2006

KOMPSAT (KOrea Multi-Purpose SATellite)-5 for the earth observation and scientific research is scheduled to launch in 2009. The second payload, AOPOD (Atmosphere Occultation and Precision Orbit Determination) system, consists of a space-borne dual frequency GPS receiver and a laser retro reflector. GPS radio occultations from AOPOD system can be used to generate profiles of refractivity, temperature, pressure and water vapor in the neutral atmosphere with a high vertical resolution. Also the radio occultation in the ionosphere provides an inexpensive tool of vertical electron density profile. Currently, many LEO missions with GPS radio occultation receivers are on orbit and more GPS occultation missions are planed to launch in the near future. In this paper, we simulated radio occultation measurements from KOMPSAT-5 and retrieved atmospheric profiles using the simulated data.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.24 no.3
• /
• pp.688-703
• /
• 1997

The effect of glossopharyngeal nerve transection on the taste buds of the rat vallate papilla was examined by using the method of DNA nick-end labeling (TUNEL) and standard electron microscopic technique at 1, 3, 5, 7, 9 days after denervation. In general, the number and size of taste buds decreased as more days passed after denervation. They started decreasing on day 3 post denervation and virtually all taste buds were disappeared on day 9 post denervation. In studies using TUNEL method, TUNEL postive cells markedly increased in their numbers one day post denervation, as compared with controls. The number of apoptotic taste bud cells per taste bud profile was averaged to be 0.64 and 0.44 for day 1 and 3 post denervation, respectively, whereas it was 0.10 in controls. In electron microscopy, apoptotic cells were identified by the presence of condensed and fragmentary nuclei in a cytoplasm, which resulted in increased density. In control rats, only few apoptotic cells were found. On days 1 and 3 post denervation, nerve fibers almost disappeared from the taste buds and some apoptotic cells were apparent. On days 7 and 9 post denervation, a few taste bud cells were still present in the epithelium of the bottom of the trench wall of the vallate papilla and most of them showed apoptotic changes. The results indicate that the death of taste bud cells in normal conditions is controlled by apoptosis and the decrease and disappearance of taste buds after denervation is also caused by apoptosis of taste bud cells.

• Applied Chemistry for Engineering
• /
• v.20 no.1
• /
• pp.99-103
• /
• 2009

HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.

• Journal of the Korean Ceramic Society
• /
• v.56 no.4
• /
• pp.360-364
• /
• 2019

PZT suspensions for photo-curable 3D printing were fabricated and their characteristics were evaluated. After mixing the PZT, photopolymer, photo-initiator, and dispersant for 10 min by using a high-shear mixer, the viscosity characteristics were investigated based on the powder content. To determine an appropriate dispersant content, the dispersant was mixed at 1, 3, and 5 wt% of the powder and a precipitation test was conducted for two hours. Consequently, it was confirmed that the dispersibility was excellent at 3 wt%. Through thermogravimetric analysis, it was confirmed that weight reduction occurred in the photopolymer between 120? and 500?, thereby providing a debinding heat treatment profile. The fabricated suspensions were cured using UV light, and the polymer was removed through debinding. Subsequently, the density and surface characteristics were analyzed by using the Archimedes method and field-emission scanning electron microscopy. Consequently, compared with the theoretical density, an excellent characteristic of 97% was shown at a powder content of 87 wt%. Through X-ray diffraction analysis, it was confirmed that the crystallizability improved as the solid content increased. At the mixing ratio of 87 wt% powder and 13 wt% photo-curable resin, the viscosity was 3,100 cps, confirming an appropriate viscosity characteristic as a stereolithography suspension for 3D printing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.12
• /
• pp.959-964
• /
• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.472-472
• /
• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.58-61
• /
• 1995

Instead of using CCl$_4$CCl$_2$F$_2$ gases, we used a alternative reaction gas of CFCs which we have developed, for the experiment of laser induced dry etching of laser induced dry etching of GaAs, and compared with the etch profile of a usual reation gas. Laser powers(power density) on the sample surface were varied from 100 mW(12.7 MW/$\textrm{cm}^2$) to 210mW(27 MW/$\textrm{cm}^2$) The laser beam was scanned over the sample by moving the cell with a speed raging from 8.3$\mu\textrm{m}$/sec and the gas pressure also was varied form 260 Torr to 760 Torr, High etching rates up to 136 $\mu\textrm{m}$/sec and an aspect ratio of 2.6 have been achieved by single scan of laser beam. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron spectroscopy(AES) Etch profiles, including depth and width were observed by scanning electron microscopy(SEM)

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.80-81
• /
• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• Journal of Oral Medicine and Pain
• /
• v.20 no.2
• /
• pp.429-447
• /
• 1995

This study was designed to determine the most effective concentration of fluoride and levels of laser irradiation for the remineralization of decayed teeth. After irradiation with a pulsed Nd:YAG laser and the topical application of fluoride, phosphate and fluoride concentration in enamel were measured. And then the changes on surface enamel using an scanning electron microscope were observed. Samples by extraction healthy, permanent, mandibular bovine teeth with no caries were obtained. Among them 371 healthy samples were selected and artificial carious lesions were made. 20 samples were assigned to each experimental group. After irradiation with a pulsed Nd:YAG laser with total energy densities of 10J/$\textrm{cm}^2$, 20J/$\textrm{cm}^2$ for each group. On the teeth, 2% NaF, 1.9% NH4F, 1.6% TiF4 Elmex gel(amine fluoride) and 1.23% APF gel were applied. After pH circulatory procedures, concentrations of fluoride with and Ionalyzer (Orion Research, Model 901, USA) and phosphates with an Uv/V is spectrophotometer (Uvikon 860, Kontrom Co, Switzerland) were measured. By etching the teeth in layers and measuring fluoride concentrations, a profile of fluoride penetration according to depth could be developed. And also the changes on the surface of the enamel using an electron scanning microscope were observed. The comparative analysis yielded the following results : 1. Phosphate concentration was low in all groups compared with the control group except for teeth treated Elmex gel, irradiated with 10J/$\textrm{cm}^2$ and 30J/$\textrm{cm}^2$ energy densities. Teeth treated with APF gel and 30J/$\textrm{cm}^2$ irradiation gad the lowest phosphate concentration. 2. Among all groups, fluoride concentrations in tooth enamel were highest in APF gel and NaF groups irradiated at 30J/$\textrm{cm}^2$. The APF gel group had the highest fluoride concentrations across all energy densities. 3. In the APF gel group, and the NaF group, the greater the energy density of the laser, the higher the fluoride concentrations in the enamel. 4. In all groups, the concentration of fluoride in the enamel by depth tended to decrease with depth. 5. Under the scanning electron microscope, under the condition of irradiation with 20J/$\textrm{cm}^2$, enamel crack was detected for the first time. In the NH4F group, spherical deposits were found on the surface of the enamel, and in the TiF4 group the surface of enamel was covered with an irregular, thin membranous mass in places. In the APF gel and NaF groups irradiated with 10J/$\textrm{cm}^2$, spherical and irregular particles covered the teeth. When these groups were irradiated at 20J/cm2, they were covered with amorphous crystals. These results suggest that one could obtain more effective anticariogenic effects without damage to teeth when less than 20J/$\textrm{cm}^2$ energy densities and APF gel are used.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.5
• /
• pp.557-565
• /
• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.