• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.50-54
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• 2006

The study on discharge of the flat lamp lighting source has been requested increasingly. To improve the brightness, life time and efficiency of flat lamp, the plasma diagnosis of flat lamp lighting source is very important. When a distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density with single Langmuir probe in flat lamp. Pressure conditions to test the plasma discharge from 100 Torr to 300 Torr. The power supply was PDS-4000 with frequency 20kHz and duty ratio $20\%.$ Form these experimental results, electron temperature was decreased according to increase the gas pressure and the voltage while electron density was increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.150-152
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Ne discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.167-170
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.649-650
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• 2012

• 대한화학회지
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• 제30권3호
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• pp.327-332
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• 1986

유도결합 플라스마 공간내의 전자밀도를 측정하였다. 전자밀도의 측정시 유도결합 플라스마의 작동조건은, (1) 냉각기체만 사용할 때, (2) 냉각기체와 운반기체만을 사용할 때, (3) 보통의 작동조건은, 즉 에아로졸을 포함한 운반기체를 사용할 때, (4) 약 88%의 에아로졸을 제거시켰을 때, 그리고 (5) 과량의 리튬을 주입시켰을 때로서 분류하였다. 보통의 작동조건에서 플라스마의 낮은 부분에서는 전자밀도가 상당히 감소하여 플라스마내의 가장 전자밀도가 큰 곳보다 약 80배 감소하였다. 이온화 방해영향을 일으키는 알칼리금속을 과량으로 넣었을 때 전자밀도의 변화는 관찰되지 않았고 유도코일의 power를 증가시키면 전자밀도도 증가하였다.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.42-47
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• 2009

The propagation of an intense laser pulse through an upward density-gradient plasma in a self-modulated laser wakefield acceleration (SM-LWFA) is investigated by using particle-in-cell (PIC) simulations. In the fully relativistic and kinetic PIC simulations, the relativistic and kinetic effects including Landau damping enhance the electron dephasing. This electron dephasing is the most important factor for limiting the energy of accelerated electrons. However, the electron dephasing, which is enhanced by relativistic and kinetic effects in the homogeneous plasma, can be forestalled through the detuning process arising from the longitudinal density gradient. Simulation results show that the detuning process can effectively maintain the coherence of the laser wake wave in the spatiotemporal wakefield pattern, hence considerable energy enhancement is achievable. The spatiotemporal profiles are analyzed for the detailed study on the relativistic and kinetic effects. In this paper, the optimum slope of the density gradient for increasing electron energy is presented for various laser intensities.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1070-1078
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• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• Journal of Astronomy and Space Sciences
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• 제19권4호
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• pp.243-254
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• 2002

Sondrestrom 비간섭 산란 레이더로부터 구한 전자밀도분포를 이용하여, 전리층의 전기전도도를 추정할때 야기되는 불확실성들을 검토하였다. 첫째, 실제로 관측된 전자밀도와 전자와 양이온의 온도차이 및 Debye length효과를 보정한 전자밀도를 사용했을 경우에 야기되는 전리층 전기전도도의 차이점을 비교하였다. 보정한 전자밀도로부터 추정된 전기전도도는 실측 전자밀도를 사용했을 때 보다 큰 값을 나타내었다. 둘째, 전기전도도 추정에 이용되는 전자-중성대기 및 양이 온-중성대기의 충돌빈도모델에 따른 차이점도 비교해 보았다. 약 110km 이하의 고도에서는 전기전도도가 충돌빈도모델에 크게 의존하지 않았지만, 약 110km 이상의 고도에서는 이용된 모델에 따라 전기전도도의 값이 달랐다. 셋째, 전자 및 양이온의 부정확한 온도측정이 전기전도도의 추정에 미치는 영향을 알아보았다. 전자 및 양이온의 온도측정에 약 10% 이내의 오차가 포함된 경우가 전기전도도의 계산에는 큰 영향을 미치지 않았다. 마지막으로, 고도 적분된 전기전도도의 추정시 적용되는 적분 구간에 대해서도 검토해 본 결과, Hall 및 Pedersen 전기전도도의 값이 각각 하부 및 상부 적분 고도의 선택에 매우 민감하다는 것이 밝혀졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.184-184
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• 2012

We proposed a new measurement method of cutoff probe using the reactance spectrum of the plasma in cutoff probe system instead of transmission spectrum. The high accurate reactance spectrum of the plasma which is expected in previous circuit simulation of cutoff probe [1] was measured by using the automatic port extension method of the network analyzer. The measured reactance spectrum is good agreement with E/M wave simulation result (CST Microwave Studio). From the analysis of the measured reactance spectrum based on the circuit modeling, not only the electron density but also electron-neutral collision frequency can be simply obtained. The obtained results of electron density and e-n collision frequency were presented and discussed in wide range of experimental conditions, together with comparison result with previous methods (a previous cutoff probe using transmission spectrum and a single langmuir probe).

• Applied Microscopy
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• 제44권2호
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• pp.74-78
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• 2014

Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.