• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.407-408
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• 2013

Thin transparent conductive oxides (TCOs) having a thickness lower than 30 nm have been widely usedin touch screen panels. However the resistivity of the TCO films significantly increases as the thickness decreases, due to the poor crystallinity at very thin thickness of TCO films. In this study, we have investigated the effect of electron beam irradiation during the sputtering on the electrical properties and transmittance of 30 nm-thick ITO films, which have a different SnO2 atomic percent, prepared by magnetron sputtering at room temperature. Fig. 1 shows the variation of resistivity of ITO films with a different SnO2 atomic percent for both the normal ITO films and electron beam irradiated ITO films. As shows in Fig. 1, the electron beam irradiation to the ITO (SnO2 weight percent 10%) films during the sputtering resulted in a significantly decreased in resistivity from $7.4{\times}10^{-4}{\Omega}-cm$ to $1.5{\times}10^{-4}{\Omega}-cm$ and it also increased in transmittance from 84% to 88% at a wavelength of 550 nm. These results can be attributed to energy transfer from electron to ad-atoms of ITO films during the electron beam irradiated sputtering, which can enhance the crystallinity of 30 nm-thick ITO films. It is strongly indicate that electron beam irradiation can greatly improve the electrical properties and transmittance of very thin ITO films for touch screen panels, flexible displays and solar cells.

• Journal of Adhesion and Interface
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• v.11 no.4
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• pp.162-167
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• 2010

In the present work, the effect of electron beam irradiation on the chemical and thermal characteristics of cellulose-based jute fibers was explored by means of chemical analysis, electron spin resonance analysis, ATR-FTIR spectroscopy, thermogravimetric analysis and thermomechanical analysis. Jute fiber bundles were uniformly irradiated in the range of 2~100 kGy by a continuous method using a conveyor cartin an electron beam tunnel. Electron beam treatment, which is a physical approach to change the surfaces, more or less changed the chemical composition of jute fibers. It was also found that the radicals on the jute fibers can be increasingly formed with increasing electron beam intensity. However, the electron beam irradiation did not change significantly the chemical functional groups existing on the jute fiber surfaces. The electron beam irradiation influenced the thermal stability and thermal shrinkage/expansion behavior and the behavior depended on the electron beam intensity.

• Laser Solutions
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• v.12 no.2
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• pp.26-30
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• 2009

Scanning Electron Microscopy (SEM) includes high voltage generator, electron gun, column, secondary electron detector, scan coil system and image grabber. Column includes electron lenses (condenser lens and objective lens). Condenser lens generates fringe field, makes focal length and control spot size. Focal length represents property of lens. Objective lens control focus. Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lens and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. In this paper, we describe the result of research to develop the core elements for low-resolution SEM.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.5
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• pp.20-25
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• 2007

Henequen fibers were treated by electron beam irradiation and by NaOH to make surface modification for better bonding in the manufacture of biocomposite. Impurity removal and carbonyl group formation were noticed in the previous study by electron beam irradiation, but extensive cellulose degradation were also noticed. To evaluate the effects of electron beam irradiation on cellulosic fibers further, henequen fibers, cotton pulp, cotton fibers, and cellophane were irradiated by electron beam, and their changes of cellulose viscosity, chemical composition, and tensile strength were measured and analyzed.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.1-10
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• 2009

This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

• Nuclear Engineering and Technology
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• v.53 no.1
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• pp.266-272
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• 2021

In the pulsed electron beam generators, such as plasma focus devices and linear induction accelerators whose electron pulse width is in the range of nanosecond and less, as well as in cases where there is no direct access to electron beam, like runaway electrons in Tokamaks, measurement of the electron energy spectrum is a technical challenge. In such cases, the indirect measurement of the electron spectrum by using the bremsstrahlung radiation spectrum associated with it, is an appropriate solution. The problem with this method is that the matrix equation between the two spectrums is an ill-conditioned equation, which results in errors of the measured X-ray spectrum to be propagated with a large coefficient in the estimated electron spectrum. In this study, a method based on the neural network and the MCNP code is presented and evaluated to recover the electron spectrum from the X-ray generated by collision of the electron beam with a target. Multilayer perceptron network showed good accuracy in electron spectrum recovery, so that for the X-ray spectrum with errors of 3% and 10%, the network estimated the electron spectrum with an average standard error of 8% and 11%, on all of the energy intervals.

• Applied Microscopy
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• v.48 no.4
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.18-21
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• 2000

A nonconstact technique for reducing the core loss of a grain oriented silicon steel has been developed by the use of mechanical scribing Q-switched laser plasma jet or electron beam irradiation. Among these methods electron beam irradiation has advantages of domain refining without any deformation or damage of insulating film on the surface of a grain criented Si-Fe. Over the past years this processing was performed in vaccum of 10-4 Torr or below causing the problem of high cost and difficulty of continuous works. In this paper a miniature electron permeable window through which electron beam energy 4-80keV and average current 0.1-2mA. were obtained for electron beam irradiating on air was designed and manufactured.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.