• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.68-72
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• 1991

In this study, to improve temperature stability 0.05 Pb(Sn$\_$$\frac{1}{2}$/Sb$\_$$\frac{1}{2}$/O$_3$ - 0.35PbTiO$_3$ - 0.60PbZrO$_3$ + 0.4[wt%]MnO$_2$ piezoelctric oeramics of low dielectric constant and large mechanical quality factor were manufactured with the addition of Cr$_2$O$_3$by Hot Press method. And the SAW delay line was fabricated and the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 added by 0.2[wt%] Cr$_2$O$_3$and its frequency characteristics was investigated. The specimen, whose propagation characteristics of surface acoustic wave were the best, was C4 added by 0.2[wt%] Cr$_2$O$_3$, and its electromechanical coupling factor(ks$^2$) was 3.11[%] and its temperature coefficient of the center frequency (C$\_$fo/) was -21.27[ppm/$^{\circ}C$]. The 31[MHz] SAW IF filter of C4 scarcely had diffraction phenomena and its group delay time was 1.4673 ${\pm}$40[ns] in the pass band, and the insertion loss was -24.419[dB] on no impedance matching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.222-223
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, high electromechanical coupling coefficient(Kp) and high mechanical quality factor(Qm), however it shows the peeling-phenomenon of electrode, and high price due to high sintering temperature. Therefore this study focus on the method for fabrication of high power rosen type piezoelectric transformers. The composition of $0.01Pb(Ni_{1/3}Nb_{2/3)O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$-0.91Pb$(Zr_{0.505}Ti_{0.495})O_3$(abbreviated as PNN-PMN-PZT) ceramics is employed for this study.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.45-50
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• 1995

The excellent c-axis oriented zinc oxide thin films were prepared by the RF magnetron sputtering method on glass substrates. Optimum fabrication conditions of the ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):$O_{2}$(50%) were 150 W, $200^{\circ}C$, and 5 mTorr, respectively. In these conditions, the deposition rate was $310\;{\AA}/min$, and the resistivity of the film was $1{\times}10^6\;{\Omega}{\cdot}cm$. The ZnO film also showed high c-axis orientation and crystalinity according to XRD pattern and SEM photograph. A fabricated interdigital transducer generated 1st mode surface acoustic wave at 46.6 MHz and 2nd mode surface acoustic wave at 52.5 MHz. At the 1st mode, the phase velocity of surface acoustic wave and the electromechanical coupling coefficient were 2795 m/sec and 0.031 %, respectivly. At the 2nd mode, they were 3149 m/sec and 0.019 %. respectivly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.38-41
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• 1992

Pb(Zr,Ti)$O_3$ powders were synthesized by the partial oxalate method and the modified partial oxalate method, where the difference between the two is the use of pre-reacted (Zr,Ti)$O_2$ in the former method. When compared with conventional mixed oxide method, calcination temperature can be reduced to less than $700^{\circ}C$ by both partial oxalate methods, and the resulting particle size was finer and more uniform. Using partial oxalate-derived PZT powders, sintering temperatures can also be reduced as low as $950^{\circ}C$ without sacrificing desired dielectric and piezoelectric properties, such as relative permittivity, electromechanical coupling factor, and piezoelectric coefficient. Two partial oxalate methods yield ceramics with almost the same physical and electrical properties, so that the step of producing ZTO powder does not seem to be necessary.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.5
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• pp.149-153
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• 2003

In this paper, a hexagon-type piezoelectric transformer was investigated to increase the output power. The length of its side was 14mm and 17.5[mm], respectively. The piezoelectric ceramics was composed to PZT-PMN-PSN. This composition showed the characteristics which had an about 1200 of the mechanical Q-factor, 0.55 of the electromechanical coupling coefficient, 320 x 10$\^$-12/ C/N of the piezoelectric constant d$\sub$33/, 0.3% of the dissipation factor, etc. The voltage step-up ratio increased with increasing the load resistance, Rt., so it reached 80 with R$\sub$L/ of l[M$\Omega$] and was proportion to the length of side of the hexagon-type piezoelectric transformer.

• The Journal of the Acoustical Society of Korea
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• v.13 no.1E
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• pp.45-54
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• 1994

Characteristics of a piezoelectric material are evaluated to pick up the optimal crystal cut and propagation direction for a SAW device. For the piezoelectric single crystal $LiTaO_4$, such items are investigated as the Rayleigh wave velocity, the electromechanical coupling factor, the surface permittivity, the frequency-temperature coefficient, the air loading attenuation, the pure mode propagation, the beam steering and the misalignment sensitivity. Theoretical calculations reveal that Y-cut and Z-propagation is the optimal SAW propagation path. The results are confirmed through experiments. The method empolyed in this paper is applicable to other crystals, too, either single or poly crystals.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.909-915
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• 1997

To improve the electro-induced strain and to decease the hysteresis of that W $O_3$dopant of which amount is 0~0.8wt% was added to (P $b_{0.73}$/B $a_{0.27}$)(Z $r_{0.75}$/ $Ti_{0.25}$) $O_3$+0.1wt% $Y_{2}$/ $O_3$ceramics. At the specimen with 0.4 wt% W $O_3$the electromechanical coupling coefficient( $K_{31}$ ) showed the maximum value of 23.6% at D.C 10 kV/cm electric field. At the same W $O_3$addition amount the piezoelectric constant( $d_{31}$ ) and the electro-induced strain($\Delta$$\ell$/$\ell$)showed the highest values of 182$\times$10$^{-12}$ [C/N] 210$\times$10$^{-6}$ $\Delta$$\ell$/$\ell$at D.C. 10 kV/cm electric field. respectively0 kV/cm electric field. respectivelyvely.

• Journal of Powder Materials
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• v.17 no.5
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• pp.399-403
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• 2010

The effects of $MnO_2$ doping on the crystal structure, ferroelectric, and piezoelectric properties of (K,Na)$NbO_3$ (KNN) ceramics have been investigated. $MnO_2$ was found to be effective in enhancing the densification and grain growth during sintering. X-ray diffraction analysis indicated that Mn ions substituted B-site Nb ions up to 2 mol%, however, further doping induced unwanted secondary phases. In comparison with undoped KNN ceramics, the well developed microstructure and the substitution to B-sites in 2 mol% Mn-doped KNN ceramics resulted in significant improvements in both piezoelectric coupling coefficient and electromechanical quality factor.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.76-80
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• 2004

Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.466-469
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• 2016

In this study, in order to develop composition ceramics for Acoustic Emission (abbreviated as AE) sensor application, the PZT system ceramics was fabricated by conventional solid state reaction method. When x=0.48, the density, electromechanical coupling factor($k_p$), piezoelectric coefficient $d_{33}$ and piezoelectric voltage constant $g_{33}$ of the maximum values of $7.857g/cm^3$, 0.51, 190[pC/N], 52[$10^{-3}mV/N$] were obtained, respectively, suitable for AE sensor.