• Title/Summary/Keyword: electrodes thickness

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Energy Trapping in the piezoelectric Substrate (압전체 기판에서의 에너지 포획)

  • 이개명;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.34-39
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    • 1995
  • Particle displacement distributions of the fundamental mode and overtone modes in an energy-frapped single resonator and an energy-trapped double acoustically coupled filter using the thickness shear vibration were calculated. And the effects of the width of a pair of partial electrodes, the width of the gap between two pairs of partial electrodes and the magnitude of the plate back on the displacement distributions of the symmetric vibration mode and anti-symmetric vibration mode of the resonators and the filters were investigated.

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Photoelectrodchemical Conversion by Polycrystalline $TiO_2$ Electrodes ($TiO_2$ 다결정 전극에 의한 광전기 화학변환)

  • 윤기현;윤상옥
    • Journal of the Korean Ceramic Society
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    • v.20 no.1
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    • pp.31-36
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    • 1983
  • The photoelectrochemical conversion by polycrystalline $TiO_2$ electrodes is effected by applied voltage oxidized $TiO_2$ thickness temperature and concentration of a, P. E. C cell. Anodic current starts at -0.8V in 1N-NaOH solu-tion and photocurrent appears around 420nm frequency. And the emf of the cell drops with the rate of 58.5mV/PH.

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FINITE-ELEMENT METHOD FOR THE IMPEDANCE ANALYSIS OF TRAVELING-WAVE MODULATORS

  • JONG CHANG YI
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.165-168
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    • 1989
  • A finite-element method is developed to calculate the impedance of arbitrarily shaped electrodes on traveling-wave modulators. This method employs the divergence theorem to obtain the total charge on an electrode from the node potential values. By using this method, the impedance of multi strip-line electrodes on anisotropic inhomogeneous dielectric media was analysed and the effect of non-zero electrode thickness was calculated.

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Inkjet Printing of Customized Silver Ink for Cellulose Electro Active Paper (셀룰로오스 EAPap 용 은잉크 제조 및 잉크젯 프린팅)

  • Mun, Seongcheol;Khondoker, Mohammad Abu Hasan;Kafy, Abdullahil;Mohiuddin, M.d.;Kim, Jaehwan
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.8
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    • pp.737-742
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    • 2014
  • This paper reports a customized silver ink and its inkjet printing process on a cellulose electro-active paper (EAPap). To synthesize a silver ink, silver nanoparticle is synthesized from silver nitrate, polyvinylpyrrolidone and ethylene glycol, followed by adding a viscosifier, hydroxyethyl-cellulose solution, and a surfactant, diethylene glycol. The silver ink is used in an inkjet printer (Fujifilm Dimatix DMP-2800 series) to print silver electrodes on cellulose EAPap. After printing, the electrodes are heat treated at $200^{\circ}C$. The sintered electrodes show that the thickness of the electrodes linearly increases as the number of printing layers increases. The electrical resistivity of the printed electrodes is $23.5{\mu}{\Omega}-cm$. This customized ink can be used in inkjet printer to print complex electrode patterns on cellulose EAPap to fabricate flexible smart actuators, flexible electronics and sensors.

The study of the properties of PZT thin films deposited on $Ru/RuO_{2}$ electrode ($Ru/RuO_{2}$ 이중 전극위에 성장한 PZT 박막의 특성에 관한 연구)

  • Choi, Jang-Hyun;Kang, Hyun-Il;Park, Young;Somg, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.394-397
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    • 2001
  • In this paper, in-situ deposited $Ru/RuO_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and $RuO_2$ bottom electrodes are also investigated. The use of $Ru/RuO_2$ hybrid electrodes showed better electrical properties in compression with $RuO_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/$RuO_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of $7.2C/cm^2$ and 46.35 kV/cm, respectively.

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The study of the properties of PZT thin films deposited on Ru/RuO$_2$ electrode (Ru/RuO$_2$ 이중 전극위에 성장한 PZT 박막의 특성에 관한 연구)

  • Choi, Jang-Hyun;Kang, Hyun-Il;Park, Young;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.394-397
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    • 2001
  • In this paper, in-situ deposited Ru/RuO$_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and RuO$_2$ bottom electrodes are also investigated. The use of Ru/RuO$_2$ hybrid electrodes showed better electrical properties in compression with RuO$_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/RuO$_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of 7.2 C/$\textrm{cm}^2$ and 46.35 kV/cm, respectively.

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Resistance Switching Characteristics of Metal/TaOx/Pt with Oxidation degree of metal electrodes

  • Na, Hee-Do;Kim, Jong-Gi;Sohn, Hyun-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.187-187
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    • 2010
  • In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

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Enhancement of Dye-Sensitized Solar Cell Efficiency by Spherical Voids in Nanocrystalline ZnO Electrodes

  • Hieu, Hoang Nhat;Dao, Van-Duong;Vuong, Nguyen Minh;Kim, Dojin;Choi, Ho-Suk
    • Korean Journal of Materials Research
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    • v.24 no.9
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    • pp.458-464
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    • 2014
  • Light scattering enhancement is widely used to enhance the optical absorption efficiency of dye-sensitized solar cells. In this work, we systematically analyzed the effects of spherical voids distributed as light-scattering centers in photoanode films made of an assembly of zinc oxide nanoparticles. Spherical voids in electrode films were formed using a sacrificial template of polystyrene (PS) spheres. The diameter and volume concentration of these spheres was varied to optimize the efficiency of dye-sensitized solar cells. The effects of film thickness on this efficiency was also examined. Electrochemical impedance spectroscopy was performed to study electron transport in the electrodes. The highest power conversion efficiency of 4.07 % was observed with $12{\mu}m$ film thickness. This relatively low optimum thickness of the electrode film is due to the enhanced light absorption caused by the light scattering centers of voids distributed in the film.

Improvement of Optical and Electrical Properties of ITO/Ag/ITO Thin Films for Transparent Conducting Electrode (투명 전극 ITO/Ag/ITO 박막의 광학적 및 전기적 특성 향상 연구)

  • Shin, Yeon Bae;Kang, Dong-Won;Kim, Jeha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.11
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    • pp.740-744
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    • 2017
  • Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

The characteristics of optical waveguides and IDT electrodes fabriacted for acousto-optic tunable filters (AOTF용 광도파로 및 IDT 전극제작)

  • 윤형도;한상필;김성구;임영민;윤대원
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.11
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    • pp.76-82
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    • 1997
  • The characteristics of optical waeguides and IDT electrodes fabricated for acousto-optic tunable filters (AOTE) used for optical communications were analyzed. A $Ti:LiNbO_3$ in-diffusion method was employed for the formation of the optical waveguide with a dimension of width $8\mu\textrm{m}$, length $30000\mu\textrm{m}$, and thickness $1150{\AA}$. The diffusion was carried at $1050^{\circ}C$ for 8 houss to pattern the optical waveguide with Ti. The resulted waveguide exhibited a single mode at a 1550nm wavelength range and its propagation loss was less than 0.5dB/cm. The width of IDT, with 10 SAW periods, was $5000\mu\textrm{m}$, S11 reflection characteristics and impedances of th eelectrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at th ecenter frquency of 193MHz for Au deposition thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for au deposition thickness of $1600{\AA}$.

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