• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.6
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• pp.539-545
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• 2014

Contact resistivity between silver electrodes and the emitter layer of a silicon solar cell wafer has been measured using either the circular transmission line method or the linear transmission line method. The circular transmission line method has an advantage over the linear transmission line method, in that it does not require an additional process for mesa etching to eliminate the leakage current. In contrast, the linear transmission line method has the advantage that its specimen can be acquired directly from a silicon solar cell. In this study, measured resistance data for the calculation of contact resistivity is compared for these two methods, and the mechanism by which the linear transmission line method can more realistically reflect the impact of the width and thickness of a silver electrode on contact resistivity is investigated.

• Bulletin of the Korean Chemical Society
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• v.32 no.11
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• pp.4035-4040
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• 2011

Long $TiO_2$ nanotube (NT) arrays, prepared by electrochemical anodization of Ti foils, have been utilized as dye-adsorbing electrodes in dye-sensitized solar cells (DSCs). By anodizing for 1-24 hr and subsequent annealing, highly crystallized and tightly-adhered NT arrays were tailored to 11-150 ${\mu}m$ lengths, ~90 nm innerpore diameter and ~30 nm wall thickness. I-V curves revealed that the photovoltaic conversion efficiency (${\eta}$) was proportional to the NT length up to 36 ${\mu}m$. Beyond this length, the ) was proportional to the NT length up to ${\eta}$ was still steadily increased, though at a much lower rate. For example, an ${\eta}$ of 5.05% at 36 ${\mu}m$ was increased to 6.18% at 150 ${\mu}m$. Transient photoelectron spectroscopic analyses indicated that NT array-based DSCs revealed considerably higher electron diffusion coefficient ($D_e$) and life time (${\tau}_e$) than those with $TiO_2$ nanoparticles (NP). Moreover, the electron diffusion lengths ($L_e$) of the photo-injected electrons were considerably larger than the corresponding NT lengths in all the cases, suggesting that electron transport in NT arrays is highly efficient, regardless of tube length.

• Korean Journal of Materials Research
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• v.30 no.6
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Journal of Oral Medicine and Pain
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• v.13 no.1
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• pp.43-52
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• 1988

The author studied masticatory muscle activity and bite force in normal persons without Temporomandibular Disorders(TMD) signs and symptoms, The number of subjects was 15, and the age of them was from 22 to 25 years. Electromyography was used to record the muscle activity in tapping and clenching movement with or without occlusal splint. 3 splints were made from 3 different mandibular position, that if, centric occlusion position, Rocabado's mandibular rest position, Dawson's centric relation position. The thickness of splint was 3.0-3.5㎜ at molar region. The muscle examined were Masseter and Anterior Temporalis attached with surface electrodes and the device used to measure the EMG level was Bioelectric processor Model EM2. After recording the EMG, the author measured the bite force level in clenching movement with bite force meter Model MPM-3000 in the dame position used in the EMG experiment. The obtained results were as follow : 1. With occlusal splints insetion, the amount of decreased muscle activity in Anterior Temporalis was more than those in Masseter. 2. In the three maxillomandibular relationships with occlusal splints, Masseter showed slightly increased level of muscle in centric occlusion but Ant. Temporalis showed decreased level of muscle activity reversely in that position. 3. Muscle activities between Rocabado's rest position and Dawson's centric relation position were generally similar whatever the muscles or the movements the author examined. 4. Bite force in clenching movement increased with splints insertion, especially with the splint registered in centric occlusion position.

• Journal of Microbiology and Biotechnology
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• v.15 no.6
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• pp.1221-1228
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• 2005

Carbon electrode was applied to a wastewater treatment system as biofilm media. The spatial distribution of heterotrophic bacteria in aerobic wastewater biofilm grown on carbon electrode was investigated by scanning electron microscopy, atomic force microscopy, and biomass measurement. Five volts of electric oxidation and reduction potential were charged to the carbon anode and cathode of the bioelectrochemical system, respectively, but were not charged to electrodes of a conventional system. To correlate the biofilm architecture of bacterial populations with their activity, the bacterial treatment efficiency of organic carbons was measured in the bioelectrochemical system and compared with that in the conventional system. In the SEM image, the biofilm on the anodic medium of the bioelectrochemical system looked intact and active; however, that on the carbon medium of the conventional system appeared to be shrinking or damaging. In the AFM image, the thickness of biofilm formed on the carbon medium was about two times of those on the anodic medium. The bacterial treatment efficiency of organic carbons in the bioelectrochemical system was about 1.5 times higher than that in the conventional system. Some denitrifying bacteria can metabolically oxidize $H_{2}$, coupled to reduction of $NO_{3}^{-}\;to\;N_{2}$. $H_{2}$ was produced from the cathode in the bioelectrochemical system by electrolysis of water but was not so in the conventional system. The denitrification efficiency was less than $22\%$ in the conventional system and more than $77\%$ in the bioelectrochemical system. From these results, we found that the electrochemical coupling reactions between aerobic and anaerobic reactors may be a useful tool for improvement of wastewater treatment and denitrification efficiency, without special manipulations such as bacterial growth condition control, C/N ratio (the ratio of carbon to nitrogen) control, MLSS returning, or biofilm refreshing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.624-630
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• 2017

In this study, we investigated the overpotential of precipitation related to the catalytic activity of electrodes on the initial process of electrodeposition of Co and Co-Ni alloys on polycrystalline Cu substrates. In the case of Co electrodeposition, the surface morphology and the magnetic property change depending on the film thickness, and the relationship with the electrode potential fluctuation was shown. Initially, the deposition potential(-170 mV) of the Cu electrode as a substrate was shown, the electrode potential($E_{dep}$) at the $T_{on}$ of electrodeposition and the deposition potential(-600 mV) of the surface of the electrodeposited Co film after $T_{off}$ and when the pulse current was completed were shown. No significant change in the electrode potential value was observed when the pulse current was energized. However, in a range of number of pulses up to 5, there was a small fluctuation in the values of $E_{dep}$ and $E_{imm}$. In addition, in the Co-Ni alloy electrodeposition, the deposition potential(-280 mV) of the Cu electrode as the substrate exhibited the deposition potential(-615 mV) of the electrodeposited Co-Ni alloy after pulsed current application, the $E_{dep}$ of electrodeposition at the $T_{on}$ of each pulse and the $E_{imm}$ at the $T_{off}$ varied greatly each time the pulse current was applied. From 20 % to less than 90 % of the Co content of the thin film was continuously changed, and the value was constant at a pulse number of 100 or more. In any case, it was found that the shape of the substrate had a great influence.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.