• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.164-167
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure $CO_2$ were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of $CO_2$ molecular gas. And for propriety of two-term approximation of Boltzmann equation analysis, the calculated results compared with the electron transport coefficients measured by Nakamura.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.29-32
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• 2001

We measured the electron transport coefficients(the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_L$) in pure $CF_4$ over the E/N range from 0.04 Td to 250 Td by the double shutter drift tube. And these electron transport coefficients in pure $CF_4$ were calculated over the E/N range from 0.01 to 250 Td at 1 Torr by using the two-term approximation of the Boltzmann equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.73-76
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• 1999

We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.122-125
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• 1991

This paper deals with hysteresis losses on the superconducting slap by using type II superconducting theory and classical maxwell equations. Transport current is transmitted to the longitudual direction and applied magnetic field is perpendicular to the slap length and simultaneously parallel to the plat. And the sinusoidal transport currents and the magnetic fields are applied to the slap. Properties of hysteresis loss can be understood, using computer simulation with apply field, transport current and phasor difference. From this result the efficiency and the stability of superconducting system can be enhanced.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.389-393
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• 2007

We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.402-407
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• 2011

The current paper describes a simpler ground-type, single-plate electrowetting configuration for droplet transport in digital microfluidics without performance degradation. The simplified fabrication process is achieved with two photolithography steps. The first step simultaneously patterns both a control electrode array and a reference electrode on a substrate. The second step patterns a dielectric layer at the top to expose the reference electrode for grounding the liquid droplet. In the experiment, a $5{\mu}m$ thick photo-imageable polyimide, with a 3.3 dielectric constant, is used as the dielectric layer. A 10 nm Teflon-AF is coated to obtain a hydrophobic surface with a high water advancing angle of $116^{\circ}$ and a small contact angle hysteresis of $5^{\circ}$. The droplet movement of 1 mM methylene blue on this simplified device is successfully demonstrated at control voltages above the required 45 V to overcome the contact angle hysteresis.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.457-462
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• 2017

A linear carbon chain with pure sp hybridization has been intensively studied for the application of its intrinsic electrical properties to electronic devices. Owing to the high chemical reactivity derived from its unsaturated bond, encapsulation by carbon nanotubes (CNT) is provided as a promising method to stabilize the geometry of the linear carbon chain. Although the influence of CNT on the carbon chain has extensively been studied in terms of both electronic structure and geometries, the electron transport properties has not been discussed yet. In this regard, we provide the systematic atomic-scale analyses of the properties of the linear carbon chain within CNT based on a computational approach combining density-functional theory (DFT) and matrix green function (MGF) method. Based on the DFT calculations, the influence of CNT on electronic structures of the linear carbon chain is provided as well as its electrical origin. Via MGF calculations, we also identify the electron transport properties of the carbon chain - CNT complex.

• Progress in Superconductivity and Cryogenics
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• v.15 no.1
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• pp.6-10
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• 2013

We investigate the electrical and thermal transport properties of a sesquicarbide superconductor $La_2C_3$, including electrical resistivity, thermoelectric power, and thermal conductivity. The electrical resistivity exhibits a typical metallic character with a saturation behavior at high temperatures. The thermoelectric power shows a metallic behavior with pronounced phonon-drag effect, comparable with pure metals. The broad peak of the thermal conductivity is observed in the superconducting state, which is rapidly suppressed by magnetic fields. These observations suggest that the electron-phonon scattering is significant in $La_2C_3$, which is relevant with the relatively high-$T_c$ in $La_2C_3$ through strong electron-phonon coupling with low frequency phonon modes.