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http://dx.doi.org/10.4313/JKEM.2007.20.5.389

Fabrication of CNT Field Effect Transistor  

Park, Yong-Wook (남서울대학교 전자공학과)
Yoon, Seok-Jin (한국과학기술연구원 박막재료연구센터)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.5, 2007 , pp. 389-393 More about this Journal
Abstract
We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.
Keywords
Carbon nanotubes; FET; CVD; Transport; Conductance;
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Times Cited By KSCI : 1  (Citation Analysis)
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