• Journal of Magnetics
• /
• 제21권2호
• /
• pp.244-248
• /
• 2016

Aiming to improve the shear yield stress of magnetorheological fluid, magnetorheological fluids with different particle characteristics are prepared, and the influence rules of particle mass fraction, particle size, nanoparticles content and application temperature on shear yield stress are investigated. Experimental results indicate that shear yield stress increases approximate linearly with the enhancement of particle mass fraction. Particle size and the nanoparticles within 10% mass fraction can improve the shear yield stress effectively. When the application temperature is higher than $100^{\circ}C$, the shear yield stress decreases rapidly because of thermal expansion and thermal magnetization effect.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.59-62
• /
• 1999

Inception and propagation of electrical tree and properties of Partial discharge(PD) pulses accompanying with tree as a function of needle tip radius in low density polyethylene were discussed. To study on these characteristics in different tip radius, we used specimens with needle-plane electrode system made of LDPE, observed inception and propagation of electrical tree by optical microscope with computer and investigated the characteristics of the phase resolved PD pulses accompanying with propagation of electrical tree. The PD quantities detected and analysed were PD magnitude, mean phase angle, average discharge, and the statistical characteristics of the PD pulses. As the tip radius ${\gamma}$ increases, tree inception stress E$\sub$i/ converges to constance value. This result suggests that tree inception stress E$\sub$i/ increases due to stress relaxation when the tip radius is small. Branch-type electrical tree was formed When E$\sub$i/ is 640-750[kV/mm]. bush-type electrical tree when E$\sub$i/ is 370∼400[kV/mm], branch-like electrical tree when E$\sub$i/ is 370-400[kV/mm].

• 대한토목학회논문집
• /
• 제40권2호
• /
• pp.183-189
• /
• 2020

이 논문은 인장 응력, 주변 온도 및 인가 주파수에 대한 강선의 전기적 임피던스 민감도에 관한 실험적 조사이다. 다양한 응력 수준 및 온도에 대해서, 강선의 전기적 임피던스가 자가진단 시스템에서 측정되었다. 세 가지 경우의 실험이 다양한 온도 조건, 응력 수준 및 적용 주파수에 대해서 수행되었다. 주어진 주파수에서 온도가 상승하고 응력이 감소하면 강선의 전기 임피던스가 증가한다. 실험 결과는 전기적 임피던스와 온도 사이의 상관관계가 모든 응력 수준에서 선형 관계임을 보여준다. 온도에 대한 임피던스의 감도는 응력보다 훨씬 높다는 점이 주목 된다.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권10호
• /
• pp.1033-1039
• /
• 1996

Electrical and mechanical properties of polymer sheet at cryogenic temperature have been investigated. Tensile stress(and strain at break) in liquid nitrogen(77K) of 79.7MPa(l.2%) and 117.4MPa(2.05%) are evaluated for films of Polypropylene (PP) and Kapton, respectively. Dielectric loss tangent(tan .delta.) of PP and Kapton films is almost independent of the frequency and tensile stress. Also, field strength of PP film at 77K decreases with increasing the tensile stress.

• Journal of Electrical Engineering and Technology
• /
• 제4권3호
• /
• pp.377-381
• /
• 2009

In the development of an interior permanent magnet synchronous machine (IPMSM) for high-speed operation, the problem of mechanical stress of the rotor by centrifugal force becomes more essential as the speed and size of the machines increase. In this paper, the optimal design process combined with mechanical stress analysis was presented. In the analysis of mechanical stress, the node and element data obtained by the electromagnetic field analysis program are also used in the stress analysis. Therefore, the different pre-processing for the stress analysis program is no longer required. Therefore, the computing time of the new method is very short compared with the conventional approach, and when repeated analyzes of various models are required, this method is very useful. The validity of our methods was verified by comparing simulation results with conventional and experimental data.

• Transactions on Electrical and Electronic Materials
• /
• 제4권6호
• /
• pp.5-8
• /
• 2003

In this paper, we investigated the fracture distribution in indium-tin-oxide (ITO) coating with compressive bending stress on polymer. Under compressive strain, the ITO island delaminates, buckles and cracks. As the mechanical compressive stress increases, the buckling width of ITO seems to be increased. These created cracks are related to well-defined distribution of mechanical stress in ITO island-arrays. We related. mechanical bending stress to crack distribution and derived theoretical equation of position-dependent bending stress. And, we verified the bending stress's magnitude to crack distribution observed from optical photographs.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.129-130
• /
• 2005

The electrical stress has a major effect on the long-term reliability of the thyristor. Therefore, it is needed to analyze the relationship between reliability and stress. In this paper, we investigate the device failure mechanism which induced by the stress. And also investigate the effect of the thermal stress on the device failure and relationship between electrical and thermal stress. Two-dimensional process simulator ATHENA and device simulator ATLAS are used to analyze the failure mechanism of the device.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 G
• /
• pp.2536-2538
• /
• 1998

This paper investigates the residual stress of tetraethoxysilane (TEOS) and 7wt% phosphosilicate glass (PSG), which are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). In order to measure residual stress, $2{\mu}m$ thick TEOS and PSG stress measurement structures are fabricated. Polysilicon is used as the sacrificial layer. First the residual stress of an as-deposited 7wt% PSG flim and TEOS film are measured to be-0.3115% and -0.435%, respectively, which are quite large. These films are annealed from $500^{\circ}C$ to $800^{\circ}C$. Annealing has the effects of reducing residual stress. In the case of the 7wt% PSG film, the residual stress becomes +0.00715% after annealing at $625^{\circ}C$ for 150 minutes. In the case of TEOS film, the residual stress reduces to -0.2134% after same condition. Incidentally, this condition is the same condition for depositing a $2{\mu}m$ thick polysilicon at $625^{\circ}C$ at our low pressure chemical vapor deposition (LPCVD) furnace.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 B
• /
• pp.1187-1189
• /
• 2004

This paper presents a boost circuit topology driving in high - frequency. It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage stress in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than voltage stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment result compares the existing voltage stress of free-wheeling diode with the proposed voltage stress of that.

• Transactions on Electrical and Electronic Materials
• /
• 제6권4호
• /
• pp.149-153
• /
• 2005

In this paper, we investigated the island density-dependent stress distribution of indium-tin-oxide (ITO) film on polycarbonate substrate by external bending force. We used e-beam and RF­sputter for SiON, ITO sputtering. It was found that there are influence of island density on the substrate and decreasing crack density as goes to the minimum density. From the result that crack density was increasing at maximum island density, it is evident that more stress is imposed on same island position as island density.