• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.229-238
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• 1996

The electromigration phenomena and the characterizations of the conductor lifetime (Time-To-Failure, TTF) in Al-1%Si thin film interconnections under D.C. and Pulsed D.C. conditions were investigated . Meander type test patterns were fabricated with the dimensions of 21080$mu \textrm{m}$ length, 3$\mu\textrm{m}$ width, 0.7$\mu\textrm{m}$ thickness and the 0.1$\mu\textrm{m}$/0.8$\mu\textrm{m}$($SiO_2$/PSG)dielectric overlayer. The current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were stressed in Al-1%Si thin film interconnection s under a D.C. condition. The peak current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were also applied under a Pulsed D.C. condition at frequencies of 200KHz, 800KHz, 1MHz, and 4MHz with the duty factor of 0.5. THe time-to-failure under a Pulsed D.C.($TTF_{pulsed D.C}$) was appeared to be larger than that under a D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition largely depends upon the appiled current densities respectively . This can be explained by a relaxation mechanism view due to a duty cycle under a Pulsed D.C. related to the wave on off. The relaxation phenomena during the pulsed off period result in the decayof excess vacancies generated in the Al-1%Si thin film interconnections because of the electrical and mechanical stress gradient . Hillocks and voids formed by an electromigration were observed by using a SEM (Scanning Electron Microscopy).

• Knowledge Management Research
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• v.17 no.2
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• pp.27-50
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• 2016

Korean manufacturing industry have recently faced the catch-up of China in the mass commodity product, such as automotive, display, and smart phone in terms of market as well as technology. Accordingly, discussion on the importance of achieving catch-up in complex product systems (CoPS) has been increasing as a new innovation engine for the industry. In order to achieve successful catch-up of CoPS, we explored emerging technologies of CoPS, which are featured by the characteristics of radical novelty, relatively fast growth and self-sustaining, through the study of emerging technologies of gas turbine for power generation. We found that emerging technologies of the gas turbine are technologies for combustion nozzle and composition of electrical machine for increasing power efficiency, washing technology for particulate matter, cast and material processing technology for enhancing durability from fatigue, cooling technologies from extremely high temperature, interconnection operation technology between renewable energy and the gas turbine for flexibility in power generation, and big data technology for remote monitoring and diagnosis of the gas turbine. We also found that those emerging technologies resulted in technological progress of the gas turbine by converging with other conventional technologies in the gas turbine. It indicates that emerging technologies in CoPS can be appeared on various technological knowledge fields and have complementary relationship with conventional technologies for technology progress of CoPS. It also implies that latecomers need to pursue integrated learning that includes emerging technologies as well as conventional technologies rather than independent learning related to emerging technologies for successful catch-up of CoPS. Our findings provide an important initial theoretical ground for investigating the emerging technologies and their characteristics in CoPS as well as recognizing knowledge management strategy for successful catch-up of latecomers. Our findings also contribute to the policy development of the CoPS from the perspective of innovation strategy and knowledge management.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.131-139
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• 2013

To overcome the limitations in performance and power consumption of traditional electrical interconnection based network-on-chips (NoCs), a hybrid optical network-on-chip (HONoC) architecture using optical interconnects is emerging. However, the HONoC architecture should use circuit-switching scheme owing to the overhead by optical devices, which worsens the latency unfairness problem caused by frequent path collisions. This resultingly exert a bad influence in overall performance of the system. In this paper, we propose a new task mapping algorithm for optimizing latency by reducing path collisions. The proposed algorithm allocates a task to a certain processing element (PE) for the purpose of minimizing path collisions and worst case latencies. Compared to the random mapping technique and the bandwidth-constrained mapping technique, simulation results show the reduction in latency by 43% and 61% in average for each $4{\times}4$ and $8{\times}8$ mesh topology, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.726-729
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• 2010

Copper Pillar Tin Bump (CPTB) was investigated for high density chip interconnect technology development, which was prepared by electroplating and electro-less plating methods. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), with copper electroplating for Copper Pillar Bump (CPB) formation firstly, and then tin electro-less plating on it for control oxidation. Electric resistivity and mechanical shear strength measurements were introduced to characterize the oxidation effects and bonding process as a function of thermo-compression. Electrical resistivity increased with increasing oxidation thickness, and shear strength had maximum value with $330^{\circ}C$ and 500 N thermo-compression process. Through the simulation work, it was proved that when the CPTB decreased in its size, it was largely affected by the copper oxidation.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1303-1305
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• 1998

In order to reduce or avoid oxidation problem at operation the interconnects in SOFCs have so far mostly been made of ceramic material. It has high chemical stability both under cathode and anode condition, relatively thermal expansion coefficient that matchs that of electrolyte material YSZ. But this material shown rather weak in the low oxygen atmosphere and thermal shock, and it has lower mechanical strength than alloys. To avoid these problems one may consider to use metals or alloys as materials for interconnects. Metallic interconnects are advantageous because of their high thermal and electronic conductivities. But it has some problems, Those are high thermal expansion and oxidation at high temperature in air. To solve these problems in the interconnection material in this study, $LaCrO_3$-dispersed Cr alloys for metallic interconnector of SOFC have been investigated as a fuction of $LaCrO_3$ content in the range of 5 to 25 vol.%. The Cr alloy were prepared by mixing Cr and $LaCrO_3$ powders in high-energy ball mill for 48h and by sintering under Ar atmosphere with 5vol.% $H_2$ for 10h at $1500^{\circ}C$. The alloys had a relative density of 95% and above. The Cr alloys in composed of two kind of small $LaCrO_3$ and large Cr particles. As the $LaCrO_3$ content increased, the Cr particle size decreased but the $LaCrO_3$ particle size remained contant. Also the oxidation tests show that the $LaCrO_3$-dispersed Cr is very resistant to oxidation in air. These results means that $LaCrO_3$-dispersed Cr is a useful material for metallic interconnect of planar SOFC.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.283-288
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• 2008

The effect of sintering aids and glass-frit on the densification and resistivity of silver paste was investigated in an effort to enhance the sintered density and electrical conductivity of the silver electrode. To prepare Pb-free silver paste for use at low sintering temperatures, two commercial silver powders ($0.8\;{\mu}m$ and $1.6\;{\mu}m$ in size) and 5wt.% lab-synthesized nanoparticles (30-50 nm in size) as a sintering aids were mixed with 3 wt.% or 6 wt.% of glass frit ($Bi_2O_3$-based) using a solvent and three roll mills. Thick films from the silver paste were prepared by means of screen printing on an alumina substrate followed by sintering at $450^{\circ}C$ to $550^{\circ}C$ for 15 min. Silver thick films from the paste with bimodal particles showed a high packing density, high densification during sintering and low resistivity compared to films created using monomodal particles. Silver nanoparticles as a sintering aid enhanced the densification of commercial silver powder at a low sintering temperature and induced low resistivity in the silver thick film. The glass frit also enhanced the densification of the films through liquid phase sintering; however, the optimum content of glass frit is necessary to ensure that a dense microstructure and low resistivity are obtained, as excessive glass-frit can provoke low conductivity due to the interconnection of the glass phase with the high resistivity between the silver particles.

• Korean Journal of Optics and Photonics
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• v.21 no.3
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• pp.111-117
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• 2010

A 780 nm monolithic individually addressable 8-beam diode laser with 10mW optical power was developed for use in a laser scanning unit. Beam to beam spacing is $30\;{\mu}m$ and an air bridge interconnection process was developed for individual operations. From electrical and optical characteristic measurements, the developed device is a suitable optical source for a high speed laser scanning unit in multi-function printing systems and laser beam printers.

• Journal of the Korean Society of Safety
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• v.36 no.5
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• pp.1-9
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• 2021

With the convergence of the information and communication technologies, a new age of technological civilization has arrived. This is the age of intelligent revolution, known as the 4th industrial revolution. The 4th industrial revolution is based on technological innovations, such as robots, big data analysis, artificial intelligence, and unmanned transportation facilities. This revolution would interconnect all the people, things, and economy, and hence will lead to the expansion of the industry. A high-density, high-capacity energy technology is required to maintain this interconnection. As a next-generation energy source, lithium-ion batteries are in the spotlight today. However, lithium-ion batteries can cause thermal runaway and fire because of electrical, thermal, and mechanical abuse. In this study, thermal runaway was induced in 72.5 Ah NCM pouch-type lithium-ion batteries because of thermal abuse. The surface of the pouch-type lithium-ion batteries was heated by the hot plate heating method, and the effect of the rate of increase in the surface temperature on the thermal runaway trigger time was analyzed using Minitab 19, a statistical analysis program. The correlation analysis results confirmed that there existed a strong negative relationship between each variable, while the regression analysis demonstrated that the thermal runaway trigger time of lithium-ion batteries can be predicted from the rate of increase in their surface temperature.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.475-482
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• 2019

In this paper, we propose a triple band antenna for GPS / DCS / WLAN system. The proposed antenna has the characteristics required by considering the interconnection of two strip lines and various slits on the ground place. The total substrate size is $31mm(W1){\times}50mm(L1)$, thickness (h) 1.6 mm, and the dielectric constant is 4.4, which is made of $22mm(W7+W12+W8){\times}43mm(L4+L3)$ antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 340 MHz (1.465 to 1.805 GHz), 480 MHz (2.155 to 2.635 GHz) and 1950 MHz (4.975 to 6.925 GHz) were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency triple band as required.