• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.605-608
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• 1999

We report investigations on a Pentacene thin film as a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and Al electrode was deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by the three-terminal contact resistance methods, as the results contact resistance between pentacene films and the Aluminium electrode is 5.064G$\Omega$. The Al contact with the pentacene shows the bottom contact resistance. From the current-voltage characteristics, electrical conductivity of the Pentacene film is found as ~ 10$^{-4}$ /cm. physical characterization of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Progress in Superconductivity
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• 제14권2호
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• pp.122-127
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• 2012

Current leads are one of the important components for carrying the current to the coil in the superconducting magnet system. Heat leakage through the current lead is the major factor of entire heat load in the cryogenic system because current leads carry the current from room temperature to near 4 K, connecting thermally each other. Therefore, minimization heat load through current lead can reduce the operating temperature of superconducting magnet. The semi-retractable current lead, composed of multi-contact connector and HTS element, is one of good options. Comprehension of Multi-contact connector's structure, contact resistance and heat generation is essential for estimating heat generation in current leads. Multi-contact connector has several louvers inside of socket and the shape, number, size of louvers are different with the size of connector. Therefore contact area, current path and contact resistance are also different. In this study, the contact resistance in multi-contact connector is measured using the electrical power as a function of connector's size and temperature. Also, the unique correlation of electrical contact resistance is derived and heat generation is estimated for superconducting magnet application.

• Carbon letters
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• 제14권3호
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• pp.162-170
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• 2013

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

• 전기학회논문지P
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• 제58권4호
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• pp.597-601
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• 2009

Green car such as a hybrid electrical vehicle and fuel cell vehicle is developed as a commercial target. UN/ECE/WP29 is developing GTR of HFCV and establishing the regulation and standard of electrical safety by ELSA. The regulation and standard about Electrical safety of vehicle are prescribed in ISO, UN/ECE, FMVSS, Japanese Attachment and so on, in case of insulation resistance is referred to keep more than 100/Vdc, 500/Vac. However, accurate method to measure insulation resistance agreeable to structure of vehicle does not exist now, it is actually that correctness of measurement drops according to the feature of battery and fuel cell stack. In this paper, the method to measure insulation resistance for protection against electrical shock by direct contact or indirect contact in Green Car will be indicated by making a comparison between the insulation measurement in standard of electrical safety and the experiment results for HEV and HFCV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.121-126
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• 2004

In this paper, the effects of the ozone oxidation of the landing polycrystalline silicon on the cell contact resistance of the DRAM device were studied. For this study, the ozone oxidation of the landing polycrystalline silicon layer was performed under various conditions, which was followed by the normal DRAM processes. Then, the cell contact resistance and $t_{WR}$ (write recovery time) of the devices were measured and analyzed. The experimental results showed that the cell contact resistance was more significantly increased for higher temperature of oxidation, longer time of oxidation, and higher concentration of ozone in the oxidation furnace. In addition, the TEM cross-sectional micrographs clearly showed that the oxide layer at the interface between the landing polycrystalline silicon layer and the plug polycrystalline silicon layer was increased by the ozone oxidation. Furthermore, the rate of the device failure due to too large write recovery time was also found to be well correlated with the increase of the cell contact resistance.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.