Proceedings of the Korean Vacuum Society Conference
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2010.02a
/
pp.277-277
/
2010
The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.
Flow field is an important parameter for polymer electrolyte membrane fuel cell (PEMFC) performance to have an effect on the reactant supply, heat and water diffusion, and contact resistance. In this study, PEMFC performance was investigated using Cu foam flow field at the cathode of 25 cm2 unit cell. Polarization curve and electrochemical impedance spectroscopy were performed at different pressure and relative humidity conditions. The Cu foam showed lower cell performance than that of serpentine type due to its high ohmic resistance, but lower activation and concentration loss due to the even reactant distribution of porous structure. Cu foam has the advantage of effective water transport because of its hydrophobicity. However, it showed low membrane hydration at low humidity condition. The metal foam flow field could improve fuel cell performance with a uniform pressure distribution and effective water management, so future research on the properties of metal foam should be conducted to reduce electrical resistance of bipolar plate.
Seo, Jae Won;Oh, Hwa Sub;Kang, Ki Man;Moon, Seong Min;Kwak, Joon Seop;Lee, Kuk Hwe;Lee, Woo Hyun;Park, Young Ho;Park, Hae Sung
Korean Journal of Metals and Materials
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v.46
no.10
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pp.683-690
/
2008
In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.
Lithium ion batteries (LIBs) is a kind of rechargeable secondary battery, developed from lithium battery, lithium ions move between the positive and negative electrodes to realize the charging and discharging of external circuits. Zeolitic imidazolate frameworks (ZIFs) are porous crystalline materials in which organic imidazole esters are cross-linked to transition metals to form a framework structure. In this article, ZIF-67 is used as a sacrificial template to prepare nano porous carbon (NPC) coated cobalt nanoparticles. The final product Co/NPC composites with complete structure, regular morphology and uniform size were obtained by this method. The conductive network of cobalt and nitrogen doped carbon can shorten the lithium ion transport path and present high conductivity. In addition, amorphous carbon has more pores that can be fully in contact with the electrolyte during charging and discharging. At the same time, it also reduces the volume expansion during the cycle and slows down the rate of capacity attenuation caused by structure collapse. Co/NPC composites first discharge specific capacity up to 3115 mA h/g, under the current density of 200 mA/g, circular 200 reversible capacity as high as 751.1 mA h/g, and the excellent rate and resistance performance. The experimental results show that the Co/NPC composite material improves the electrical conductivity and electrochemical properties of the electrode. The cobalt based ZIF-67 as the precursor has opened the way for the design of highly performance electrodes for energy storage and electrochemical catalysis.
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.115-116
/
2012
The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.
Kim, Byeong-Guk;Kim, Jeong-Yeon;Oh, Byoung-Jin;Lim, Dong-Gun;Park, Jae-Hwan;Woo, Duck-Hyun;Kweon, Soon-Yong
Korean Journal of Materials Research
/
v.20
no.4
/
pp.175-180
/
2010
Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.
Proceedings of the Korean Vacuum Society Conference
/
2013.02a
/
pp.642-642
/
2013
Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.
Modern artworks are constructed using a variety of materials and techniques. Sculptures, which predominantly consist of metals, usually have different shapes and consist of different material mixtures. The structural and material properties of these sculptures are often controlled by conservation treatment methods. However, the application of existing treatment methods is challenging at times, indicating that more diverse treatment materials and techniques are necessary. Therefore, in this study, a treatment method that employs volatile corrosion inhibitor(VCI) powder, rather than an anti-corrosion solution, for the conservation and management of metal artworks was used. VCI powder and VCI films containing VCI powder were used, and the results obtained confirmed that both of them showed anti-corrosion effect. Only a slight change in the chromaticity of metal samples was observed, and compared to the untreated samples, the application of the VCI powder resulted in a decrease in the rate of corrosion by half. Moreover, VCI film tests revealed that comparing to the untreated or polyethylene film-treated samples, VCI film treatment resulted in a decrease in the occurrence of corrosion compounds. The contact angle, surface energy, and surface electrical resistance were measured, and the evaluation of these surface properties established the anti-corrosion effect of VCI. Additionally, direct application of VCI and VCI films on actual sculptures further confirmed the anti-corrosion effect of VCI.
Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.
Sulfonated poly(ether ether ketone) (SPEEK) nanofibers were prepared by electrospinning. The nanofibrous membrane for polymer electrolyte membrane fuel cell (PEMFC) was fabricated by compression molding. The maximum degree of sulfonation was 95% and the initial thermal degradation temperature was $280^{\circ}C$ and it's value was lower than that of PEEK. The contact angle of SPEEK increased with decreasing the degree of sulfonation. The optimum voltage, flow rate, tip to collector distance (TCD) and concentration of electrospinning conditions were 22 kV, 0.3 mL/hr, 15 cm, and 23 wt%, respectively. The average nanofibrous diameter was 47.6 nm. The water uptake and ion exchange capacity of SPEEK nanofibrous membrane increased with increasing the sulfonation time and the amount of sulfonating agent. The electrical resistance and proton ionic conductivity of SPEEK membrane increased with decreasing and increasing the sulfonation time, respectively. Their values were 0.58~0.06 ${\Omega}{\cdot}cm^2$and 0.099 S/cm.
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