• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.525-532
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• 2001

In this paper, physical properties and electrical characteristics of linear low density polyethylene(LLDPE) films blended with ethylene vinyl acetate(EVA), containing polar groups within it, were investigated to improve defects of polyethylene(PE) such like space charge accumulation and tree growth. Blending method changes super-structure of LLDPE, having a great influence on electrical characteristics. For analysis of physical properties, FTIR, XRD and DSC methods were executed, and for electrical characteristics, volume resistivity and dielectric strength were measured with the varying temperature. From the results, it is confirmed that bled specimens tend to be safe to varying temperature, and specially of 70:30 and 50:50 have a good performance.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.43-46
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• 2013

In order to develop electrical insulation material, organically modified layered silicate was incorporated into an epoxy matrix to prepare nanocomposite. Transmission electron microscopy (TEM) observation showed that organophillic clay was in an exfoliated state, while hydrophilic clay was not dispersed into nanolayers within the epoxy matrix. Epoxy/organophilic clay (2.8 wt%) nanocomposite was mixed and cured at $150^{\circ}C$ for 4.5 hr. I-V characteristics, volume resistance and dielectric properties for the cured nanocomposite were estimated. Current density increased with increasing temperature, and volume resistance decreased with increasing temperature, in neat epoxy and epoxy/organophilic clay (2.8 wt%) nanocomposite. As frequency increased, the dielectric loss value decreased in the two systems.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.819-821
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• 1998

Arachidic acid(AA) was used as LB films and its dielectric and conduction characteristics were investigated. The relative dielectric constant(${\varepsilon}_{LB}$) of AA LB films obtained from capacitance-frequency properties was about $3.5{\sim}4.1$. And the conductivity(${\sigma}_{LB}$) of AA LB films obtained from Current-Voltage characteristics was about $2.6{\times}10^{-15}[S/cm]$. Also, the conduction mechanism of current in LB films was dependant on Schottky type and the barrier height obtained from Schottky plot was about 1.4[eV].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1562-1564
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• 1996

Langmuir-Blodgett (LB) method have been used by many rescarcher because of its facility to control the thickness of film as molecular order and orientation of molecular. We fabricated MIM device using copolymer LB films of $2C_{18}MA-VE_2$ and elecctrical conduction mechanism in ultra-thin LB film were investigated. In our experimental results, the maleate copolymer LB film have the properity of insulator like organic ultra-thin fiim. Its diclcctric constant was about 3.5 and its voltage generation about 0.1 Volt. And Schottky current was apeared as electrical conduction current and Schottky barrier was about 0.9(eV).

• 한국세라믹학회지
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• 제55권5호
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• pp.440-445
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• 2018

To control the electrical properties of a SiC heating element, we sintered $SiC-ZrB_2$composites by using the spark plasma sintering method. The addition of $ZrB_2$ particles with lower electrical conductivity to the SiC matrices with comparatively higher electrical resistivity lowers the electrical resistivities of the composite material. The $ZrB_2$ particles aggregate to form large particles and 3-1, 3-2, and 3-3 networks, i.e., conduction paths. In our study, about $1-{\mu}m$-sized $ZrB_2$ powders start to form the conduction path at about 10 vol.% of addition, namely the threshold volume. The Joule heating experiment shows that 20 vol.% $ZrB_2$-added SiC heating element has outstanding heating efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.133-136
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• 1992

Electrical resistivity and piezoelectric properties were investigated in Lead Zirconate-Titante(PZT) with Nb$_2$O$\sub$5/dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(K$\sub$p/) were increased with increasing Nb content. The reason for increasing of the electrical resistivity below the Curie Temperature(TC). It is believed that the Curie Temperature(Tc). It is believed that the p-type electrical conduction in PZT is due to lead vacancies. The electromechanical coupling factor(K$\sub$p/) and piezoelectric constant d$\sub$33/ were improved. This behavior can be explained as a compensation effect and Nb$\^$5+/ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized Nb$_2$O$\sub$5/ dopants on the PZT specimens were 0.75 wt%.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.428-432
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• 2014

The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

• Journal of Power Electronics
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• 제9권5호
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• pp.708-717
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• 2009

In this paper a new zero voltage transition PWM bridgeless PFC is introduced. The auxiliary circuit provides soft switching condition for all semiconductor devices. Also, in the resonant path of the auxiliary circuit, only two semiconductor devices exist. Therefore the resonant conduction losses are low. Furthermore, the auxiliary circuit semiconductor elements consist of only one diode and one switch. The proposed auxiliary circuit is applied to a bridgeless PFC converter to further reduce conduction and switching losses. In this paper, the operating modes of this converter are explained and the resulting ideal and simulation waveforms are shown. The presented experimental results justify the theoretical analysis.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1991년도 추계학술발표회논문집
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• pp.64-68
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• 1991

It happened that there was a sudden peak with the capacity of change, when I measured the capacity of change, cubical expansion and Thermally Stimulated Current on the Cross - Linked Polythylene. Crystal melting began at 375 K and changed into formaless shapeless at 380 K. The conduct of a particle on the surfase of dipole, electron trap was founded to be ion conduction nature under the low electronic field, wherase, the electron nature under the high electronic field. Consequentity, under the semi-conduction layer electronic a particle was injected to inter-fase and accumulated for a time and appeared to be TSC.

• 전력전자학회논문지
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• 제19권2호
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• pp.173-183
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• 2014

In this paper, an analysis of power losses for the three-level T-type and neutral-point clamped (NPC) PWM inverters is presented, in which the conduction and switching losses of semiconductor devices of the inverters are taken into account. In the inverter operation, the conduction loss depends on the modulation index (MI) and power factor (PF), whereas the switching loss depends on the switching frequency. Power losses for the T-type and NPC inverters are analyzed and calculated at the different operating points of MI, PF and the switching frequency, in which the four different models of semiconductor devices are adopted. In the case of lower MI, the NPC-type is more efficient than the T-type, and vice versa. The validity of the power loss analysis has been verified by the simulation results.