Browse > Article
http://dx.doi.org/10.4313/JKEM.2014.27.7.428

Anisotropy of the Hall Factor According to the Growth Direction in the Two-dimensional Device with Indirect Conduction Valley  

Kim, Jong Gu (Department of Electronic Engineering, Inha University)
Lee, Jae Chul (Department of Electronic Engineering, Inha University)
Chun, Sang Kook (Department of Electronic Engineering, Inha University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.7, 2014 , pp. 428-432 More about this Journal
Abstract
The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.
Keywords
Indirect conduction valley; Hall factor; Anisotropy;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, and K. Nakagawa, Appl. Phys. Lett., 90, 202101 (2007).   DOI   ScienceOn
2 S. F. Nelson, K. Ismail, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett., 63, 367 (1993).   DOI   ScienceOn
3 S. K. Chun, J. Korean Phys. Soc., 42, 129 (2003).
4 J. C. Lee and S. K. Chun, J. KIEEME, 26, 421 (2013).
5 E.P.D. Poortere, Y. P. Shkolnikov, and M. Shayegan, Physica E, 13, 646 (2002).   DOI