한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권7호
  • /
  • Pages.428-432
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  • 2014
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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간접천이대를 갖는 2차원 소자에서 성장방향에 따른 Hall 인수의 이방성 연구

Anisotropy of the Hall Factor According to the Growth Direction in the Two-dimensional Device with Indirect Conduction Valley

  • Kim, Jong Gu (Department of Electronic Engineering, Inha University) ;
  • Lee, Jae Chul (Department of Electronic Engineering, Inha University) ;
  • Chun, Sang Kook (Department of Electronic Engineering, Inha University)
  • 투고 : 2014.04.14
  • 심사 : 2014.06.10
  • 발행 : 2014.07.01
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초록

The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

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참고문헌

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