• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.221-224
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• 1997

In this study we investigated the acting characteristics of Polymers for electrical insulation by UV radiation and salt water spray treatment. We used the Polymers such as EPDM, SR. PTFE. EVA. We measured contact angle and surface resistance to know the aging characteristic of Polymer surface. And we use SEM to observe the change of the surface shape. Dry flashover voltage test impulse voltage test were carried for the polymer insulator(EVA) . Through this experiment and the analysis we could know the polymers have a good resistance to weathering conditions like as salt spray UV irradiation and mix of them. And we can compare the aging characteristics between Polymers. As a result, we could know that the surface characteristics of PTFE is better than the other. And the degree, electrical characteristics is affected by change of surface shape is not big.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.370-372
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• 1995

This paper mainly, describes the electrical characteristics caused by the change of structure in solid state of specimen by electron beam irradiation of high temperature-low expension type molding materials of power semiconductor element. The experiments on physical properties and electrical characteristics for the specimen irradiated electron beam are carried ont. For the investigation on physical properties, XRD analysis is used. And for the experiment of electrical characteristics, measurement of volumn resistivity is used.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.50-52
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• 2003

This paper presents characteristics analysis of brushless DC motor(BLDCM) which driven by two types of PWM mode. The phase current and torque ripples are generated differently at each PWM mode. So they have a different influence on motor characteristics. In this paper, we have analyzed characteristics of BLDCM using time-stepped voltage source finite element method. The effect of two types of PWM mode had been confirmed by comparing each phase current and torque ripple waveform. The compared simulation result is useful to select a better PWM mode.

• 한국안전학회지
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• 제30권2호
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• pp.9-13
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• 2015

This paper describes the analysis of deterioration characteristics for connection factor used in grounding system. The connection method of grounding system is specified in IEC standard. In order to analyze the deterioration characteristics for connection factor, deterioration test was carried out when the connection factor was buried in salt water and underground. The test connection factors were C-type sleeve, clamp, and exothermic welding. As a consequence, most of the connection factor was corroded, and the electrical resistance decreased after deterioration. The analytical results can be used to establish the safety of grounding system.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.45-52
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• 2000

The conduction characteristics in Oriented polypropylene (OPP) film were studied over electric field intensities between 10 M/V m and 300 M/V m . The range of the conduction characteristics was divided in to five regions with increasing field intensity. Particularly, in the region from 70 Mb/m to 82 MV/m voltage-controlled negative resistance was displayed. In the negative resistance region current oscillations were also observed the negative resistance characteristics could by explaine by Gibbons theory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.63-66
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• 1992

Using an aromatic system, we made a ultra thin insulator through LB-method. We measured and wrote down afternating currant characteristics of ultraviolet rays extincting-spectrum and I.R extincting-spectrum. We surveyed the thickness of a film through X-ray diffracting method and certified about $4{\AA}$ by the layer. Measuring the characteristics of direct current voltage and electric current with this sample, we produced its conductivity and discovered that this sample had a god insulating performance. Addition to this, we measured the characteristics of voltage and electric current, and the temperature dependency of conductivity in a high voltage system and with these results tried to interpret a mechanism of conduction.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1270-1273
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• 1997

We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.