• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.63-64
• /
• 2009

Optical bounce during switching in the fringe field switching (FFS) mode using a liquid crystal (LC) with positive dielectric anisotropy has been observed. According to the analysis, it occurs at two positions which are center and edge of the pixel electrode, which decreases decaying response time. The former is major and mainly associated with increase in twist angle instantaneously during switching off resulted from decrease in tilt angle near by LC molecules at center. This paper discusses the origin of such optical bounces.

• 한국전기전자재료학회논문지
• /
• 제27권7호
• /
• pp.428-432
• /
• 2014

The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

• 한국전기전자재료학회논문지
• /
• 제27권5호
• /
• pp.303-306
• /
• 2014

In this paper, by using a dual frequency liquid crystal material, we propose a liquid crystal device with a fast response characteristics. The dual frequency liquid crystal material has a positive dielectric anisotropy value at a low frequency. With a high frequency, the dielectric anisotropy becomes negative. Therefore, the relaxation process is governed by not only the elastic deformation, but also the dielectric interaction. The measured decay time and rise time were 0.88 ms and 0.33 ms, respectively.

• Transactions on Electrical and Electronic Materials
• /
• 제14권3호
• /
• pp.111-115
• /
• 2013

The dielectric anisotropy and dispersion of the real and imaginary part of the permittivity of commercially important nematic mixture E-24 and its polymer composite were investigated in the frequency range from 1 kHz to 10 MHz, and temperature range $14^{\circ}C$ to $55^{\circ}C$. The percentage optical transmittance and density have also been measured for both the systems. The results have been explained by assuming molecular rotation about the long molecular axis, under a hindering nematic potential. The dielectric anisotropy ${\Delta}{\varepsilon}$ is positive, and the mean dielectric permittivity falls with rising temperature. ${\Delta}{\varepsilon}$ is also used to determine the order parameter with varying temperature.

• 한국전기전자재료학회논문지
• /
• 제14권1호
• /
• pp.58-63
• /
• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• 한국전기전자재료학회논문지
• /
• 제17권3호
• /
• pp.311-318
• /
• 2004

We have studied electro-optic characteristics as a function of pretilt angle ($\theta$$_{p}$) in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. When $\theta$$_{p}$ is increased from 0$^{\circ}$ to 20$^{\circ}$, a maximum transmittance and an operating voltage are obviously decreased. In the viewing angle characteristics, the cell with low pretilt angle has a wide region for the contrast ratio greater than 5 and has a best luminance uniformity. Therefore, in the FFS device, a low pretilt angle is favored for high transmittance and wide viewing angle.gle.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1756-1760
• /
• 2006

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.463-465
• /
• 2002

In order to increase perpendicular magnetic anisotropy of magnetic layer and prepare magnetic recording layer with a good quality by epitaxial growth between magnetic layer and, we prepared Co$\_$77/Cr$\_$20/Ta$_3$/Si doublelayer for perpendicular magnetic recording media which was promoted as next generation recording media on slide glass substrate. The thickness of magnetic layer and Underlayer were varied from 20 to 100 nm and 5 to 100 m, respectively. The surface morphology and crystal structure of the CoCrTa/Si film were examined with XRD and AFM. Prepared thin films showed improvement of dispersion angle of c-axis orientation Δ$\theta$$\_$50/ caused by inserting amorphous Si underlayer.

• 한국전기전자재료학회논문지
• /
• 제15권10호
• /
• pp.902-908
• /
• 2002

Homogeneously aligned nematic liquid crystal displays (LCDs) driven by in-plane or fringe field were known to exhibit wide viewing angle and appeared to be black in the off state. However, the existence of spacers inside the cell causes the deformation of the liquid crystal molecules. Such a deformation of the liquid crystal causes light-leakage in the dark state, which lowers contrast ratio of the display. We found that the light-leakage due to deformation of the LC director near the spacer mainly depends on the dielectric anisotropy and the ratio of elastic constants of the LC. In this paper, the mechanism on deformation of the LC near spacer is investigated by optical polarizing microscopy.

• 한국전기전자재료학회논문지
• /
• 제14권2호
• /
• pp.139-144
• /
• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.