LTPS (Low Temperature Poly Si) Technology Based on SLS (Sequential Lateral Solidification) Crystallization for Advanced Mobile Display

  • Kang, Myung-Koo (MD Development Team, MD Business, Samsung Electronics Co.) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Chi-Woo (MD Development Team, MD Business, Samsung Electronics Co.) ;
  • Kim, Hyung-Guel (MD Development Team, MD Business, Samsung Electronics Co.)
  • Published : 2006.08.22

Abstract

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

Keywords