• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.83-89
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• 2000

BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method. $O_2/(Ar+O_2)$ mixing ratio was 10%, substrate temperature was changed from R.T. to $500^{\circ}C$, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of $400^{\circ}C$, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below $3.3{\times}10^{-7\;}A/cm^2$ at 5\;MV/cm applied electric field, and transmittance was over 82% at visible range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.589-598
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• 1997

The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋xPbTiO_3＋yPbZrO_3$＋0.4Wt% $MnO_2$(＝0.55PSS＋0.11PT＋0.84PZ＋0.4wt%$MnO_2$ ; x＋y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.292-296
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• 2014

We investigated the effect of Ta doping on the dielectric and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics prepared using a conventional ceramic processing. X-ray diffraction analysis revealed that Ta was perfectly substituted into Nb-sites in the range of 0 to 20 at%. As Ta content in the KNN increased, the sinterability of KNN ceramics was significantly degraded while the Ta doping enhanced the piezoelectric constant $d_{33}$, planar mode piezoelectric coupling coefficient ($k_p$), and electromechanical quality factor ($Q_m$). The highest values for $d_{33}$, $k_p$, and $Q_m$ was found to be 156 pC/N, 0.37, and 155, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.838-842
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• 2006

0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.76-76
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• 2008

The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.858-868
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• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• Applied Chemistry for Engineering
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• v.2 no.3
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• pp.253-261
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• 1991

Polyamic acids, precursor polymers of polyimides have been obtained by the solution polycondensation of benzophenone tetracarboxylic dianhydride (BTDA) with 4, 4'-diamino diphenyl methane (MDA) and/or 3, 3'-dimethyl benzidine (OTB). The reaction was carried in two solvent systems such as m-cresol and m-cresol/xylene mixture. The results of TGA analysis showed that the polyimide films had good thermal stability with the initial decomposition temperature ranging from $540^{\circ}$ to $590^{\circ}$. According to DSC analysis of polymers, the glass transition temperature was over $340^{\circ}$. Polyimide film samples, showed good mechanical and electrical properties, had over $16Kg/mm^2$ of tensile strength and about 200 KV/mm of dielectric breakdown voltage. The properties of the copolymer from MAD/OTB were better than those of the homopolymer from MDA. And the polymer synthesized in m-cresol had lower properties than that obtained in m-cresol/xylene.